Abstract: A center core laminated part and a side core laminated part are formed separately from each other. The center core laminated part is integrated with the side core laminated part by engaging depressed engaging portions with projected engaging portions, wherein the depressed engaging portions and the projected engaging portions are formed relatively on the corresponding opposite surfaces, to form a laminated core part for forming a magnetic path.

Abstract: A charge pump circuit comprises a plurality of booster stages. Each booster stage has a first node, a second node, a first charge pump and a second charge pump. Both charge pumps operate in a complementary manner, and raise potential of the second node relative to potential of the first node by transferring charge from the first node to the second node. Each charge pump comprises a pumping capacitor, an NMOS transistor and a PMOS transistor. In each charge pump, the NMOS transistor is used for charging the pumping capacitor with charge input through the first node, and the PMOS transistor is used for discharging the pumping capacitor to send charge to the second node.

Abstract: The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used.Any material selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and SiF.sub.4, and GeH.sub.4 or GeF.sub.4, are used as raw material gases. H.sub.2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm.sup.2, and a substrate temperature of 50.degree. to 250.degree. C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided.