Abstract: A method of adjusting a laser processing apparatus includes controlling an X-axis galvanometer scanner and a Y-axis galvanometer scanner on the basis of X coordinates and Y coordinates recorded in a coordinate recording section to apply a pulsed laser beam to a workpiece, thereby processing the workpiece, actuating an X-axis moving mechanism and a Y-axis moving mechanism on the basis of the X coordinates and the Y coordinates recorded in the coordinate recording section and causing an image capturing unit to capture an image of processed marks on the workpiece, and detecting shifts between X coordinates and Y coordinates of the processed marks whose image has been captured in the processed mark image capturing step and the X coordinates and the Y coordinates recorded in the coordinate recording section, and recording corrective values in a corrective value recording section.

Abstract: A method of adjusting a laser processing apparatus includes controlling an X-axis galvanometer scanner and a Y-axis galvanometer scanner on the basis of X coordinates and Y coordinates recorded in a coordinate recording section to apply a pulsed laser beam to a workpiece, thereby processing the workpiece, actuating an X-axis moving mechanism and a Y-axis moving mechanism on the basis of the X coordinates and the Y coordinates recorded in the coordinate recording section and causing an image capturing unit to capture an image of processed marks on the workpiece, and detecting shifts between X coordinates and Y coordinates of the processed marks whose image has been captured in the processed mark image capturing step and the X coordinates and the Y coordinates recorded in the coordinate recording section, and recording corrective values in a corrective value recording section.

Abstract: An opening and closing apparatus includes: a drive unit provided in an opening and closing body which is openably and closeably attached to a main body, and opening and closing the opening and closing body with respect to the main body by driving the opening and closing body using electric power; a secondary energy storage device provided in the opening and closing body and electrically connected to the drive unit in such a manner that the secondary energy storage device can be inductively charged and can supply electric power to the drive unit; and an electric power receiving coil provided in the opening and closing body so as to be capable of facing an electric power transmitting coil which is provided on the main body, and is electrically connected to a primary energy storage device installed on the main body, and electrically connected to the secondary energy storage device.

Abstract: An opening and closing apparatus includes: a drive unit provided in an opening and closing body which is openably and closeably attached to a main body, and opening and closing the opening and closing body with respect to the main body by driving the opening and closing body using electric power; a secondary energy storage device provided in the opening and closing body and electrically connected to the drive unit in such a manner that the secondary energy storage device can be inductively charged and can supply electric power to the drive unit; and an electric power receiving coil provided in the opening and closing body so as to be capable of facing an electric power transmitting coil which is provided on the main body, and is electrically connected to a primary energy storage device installed on the main body, and electrically connected to the secondary energy storage device.

Abstract: A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.

Abstract: A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device.

Abstract: There is disclosed a method for producing an ambient temperature molten salt comprising at least one of 1,3-dialkylimidazolium halide, 1,2,3-trialkylimidazolium halide and N-alkylpyridinium halide, and an aluminum halide, which comprises suspending the above starting materials in an inert solvent having a low boiling point to carry out a complex forming reaction.

Abstract: There is disclosed a non-aqueous electrolytic aluminum plating bath composition comprising an aluminum halide and a nitrogen-containing heterocyclic onium halide compound and containing an additive selected from the group consisting of an inorganic halide compound, aromatic aldehyde, ketone or carboxylic acid, an unsaturated heterocyclic compound containing more than one nitrogen atom, an unsaturated heterocyclic compound containing a sulfur atom, an aromatic hydrocarbon compound containing a sulfur atom, an aromatic hydrocarbon compound containing an amino group and an aromatic amine; and further optionally an organic polymer. The bath composition is easy in maintenance, has good covering power, and enables smooth plating with low current density.

Abstract: There is disclosed an aluminum electroplating method, which compriss using a low melting composition comprising a mixture of 20 to 80 mole % of an aluminum halide and 80 to 20 mole % of an onium halide of a nitrogen-containing compound selected from the group consisting of bicyclic quaternary amidinium halides, 1-alkylaminopyridinium halides, trialkylimidazolium halides, benzimidazolium halides, alicyclic quaternary ammonium halides and asymmetric tetraalkylammonium halides.

Abstract: A process for producing quaternary salts of high purity is disclosed, comprising reacting a tertiary amine or phosphine with a carbonic acid diester to form a corresponding quaternary carbonate and further mixing it with an acid to perform decarboxylation. The quaternary salts thus obtained are useful compounds which can be used in wide fields as various catalysts, electrolytes, additives, medicaments, etc.

Abstract: An electrolyte for aluminum electrolytic capacitor is described, comprising a solution of, as a solute, a quaternary ammonium salt having as an anion component the conjugated base of an inorganic acid compound selected from the group consisting of(1) boric acid,(2) phosphoric acid,(3) phosphorous acid and phosphorous acid monoesters, and phosphonic acids, and phosphonic acid monoesters,(4) hypophosphorous acid and phosphinic acids,(5) alkylboric acids and arylboric acids,(6) silicic acid, and(7) carbonic acid and carbonic acid monoesters, dissolved in an aprotic solvent mainly composed of .gamma.-butyrolactone.This electrolyte can reduce the internal resistance of the electrolytic cpacitor and broaden the temperature range over which the electrolytic capacitor can be used.

Abstract: An electrolyte for use in an aluminum electrolytic capacitor is described. The electrolyte comprises a solution of a quaternary phosphonium salt as a solute dissolved in an aprotic solvent. The electrolyte can reduce internal resistance of the electrolytic capacitor and broaden the temperature range over which the electrolytic capacitor can be used.