Patents by Inventor Kazuhiko Ihaya

Kazuhiko Ihaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the epitaxial growth of boron phosphorous semiconductors
    Patent number: 4293370
    Abstract: The epitaxial growth of boron-phosphorous semiconductors can be accomplished by chemically reacting the gas materials diborane and phosphorous trichloride. The preferable temperature of the substrate in 880.degree. C.-1,110.degree. C. and the preferable ratio of the phosphorous trichloride to diborane in mol is 2-200. Use is made of a composite substrate.
    Type: Grant
    Filed: February 13, 1980
    Date of Patent: October 6, 1981
    Assignee: TDK Electronics Co., Ltd.
    Inventors: Katsuto Nagano, Kazuhiko Ihaya, Syozo Sasa, Takeshi Nakada