Abstract: An object is to provide a method of manufacturing a supercharger that can promptly and easily form an abradable layer in a supercharger. A method of manufacturing a supercharger is a method of manufacturing a supercharger including a turbine configured to rotationally drive, and a compressor having an impeller configured to rotate according to rotational force of the turbine and a housing (10) configured to store the impeller, and the method includes a process of applying coating of an abradable material which is to form an abradable layer (20) when being solidified, only to a predetermined range on a surface of the housing (10) via which the impeller and the housing (10) face.

Abstract: An object is to provide a method of manufacturing a supercharger that can promptly and easily form an abradable layer in a supercharger. A method of manufacturing a supercharger is a method of manufacturing a supercharger including a turbine configured to rotationally drive, and a compressor having an impeller configured to rotate according to rotational force of the turbine and a housing (10) configured to store the impeller, and the method includes a process of applying coating of an abradable material which is to form an abradable layer (20) when being solidified, only to a predetermined range on a surface of the housing (10) via which the impeller and the housing (10) face.

Abstract: In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Abstract: In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Abstract: In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Abstract: An object is to provide an aluminum die cast product, e.g., a pressure vessel that requires high airtightness, in which pressure leak or gas leak ratio can be reduced and the product yield can be increased and also to provide a method for manufacturing the product. An aluminum die cast product in which a cast hole is formed by a core pin in a thick portion that is made thicker than other portions, wherein a chill layer with a secondary dendrite arm spacing of at least 5.5 ?m or less is provided at the surface of the cast hole.

Abstract: A method and an apparatus for manufacturing an aluminum die-cast product are provided, wherein an occurrence of shrinkage cavity is eliminated or reduced to a very small amount, and a sound and high-quality aluminum die-cast product having no casting defect can be produced. The method for manufacturing an aluminum die-cast product by performing die casting while a part, in which a casting defect tends to occur due to solidification shrinkage of a melt, which has been pressure-filled in a mold, during a solidification process, is pressurized with a local pressurization pin includes the steps of allowing the local pressurization pin to follow the movement of a solidification interface based on a solidification interface movement speed, which is calculated in advance, of the melt and keeping pushing the local pressurization pin in until the solidification is completed.

Abstract: In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Abstract: A light-emitting device includes a light-emitting element emitting primary light and a wavelength conversion portion absorbing a part of the primary light and emitting secondary light having a wavelength equal to or longer than the wavelength of the primary light. The wavelength conversion portion includes a plurality of green or yellow light-emitting phosphors and a plurality of red light-emitting phosphors. The green or yellow light-emitting phosphor is implemented by at least one selected from a specific europium (II)-activated silicate phosphor (A-1) and a specific cerium (III)-activated silicate phosphor (A-2). The red light-emitting phosphor is implemented by a specific europium (II)-activated nitride phosphor (B). The light-emitting device emitting white light at efficiency and color rendering property higher than in a conventional example can thus be provided.

Abstract: A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.

Abstract: A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

Abstract: A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.

Abstract: A plasma address electrooptical device is provided, wherein the distance between a liquid crystal drive electrode 6a and an adjacent liquid crystal drive electrode 6b is set to be equal to or greater than the distance between the lower surface of said liquid crystal drive electrode 6a and the lower surface of a dielectric layer 3. Moreover, by providing additional electrodes between liquid crystal drive electrodes of the plasma address electrooptical device, the display leakage to adjacent pixels is reduced even further.

Abstract: A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

Abstract: A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

Abstract: The object of the present invention is to provide an Oldham ring having uniform electroplating thickness and a scroll member type compressor comprising the same; in order to accomplish the above object, the electroplating process for plating an Oldham ring comprising a ring body and a plurality of key portions extending outwardly from the ring body of the present invention comprises the steps of: soaking the Oldham ring in a plating liquid; arranging at least two cathodes respectively on the inside wall of the ring body at positions corresponding to the areas between each adjacent pair of the key portions; and electroplating the Oldham ring by passing electric current between the cathodes and at least one anode contacting to the plating liquid.

Abstract: The present invention provides a method for producing a group III-V compound semiconductor including nitrogen as a group V element by an organometallic vapor phase growth method. An organometallic as a group III material, an amine type material or ammonia as a group V material and an organic compound which is decomposed by heating so as to generate radicals are used to perform crystal growth.

Abstract: A semiconductor laser device including Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1)) layers has an InN contact layer, which has a thickness ranging, preferably, from 0.1 .mu.m to 1.0 .mu.m inclusive. The contact layer is formed by a MOCVD method. When materials for formation of the InN contact layer are fed into a reactor, an organic radical material is also fed and a substrate temperature is controlled to be about 800.degree. C. during the process of growth of the InN layer.

Abstract: A semiconductor device of the present invention includes: an SiC substrate; an SiC growth layer for absorbing a grating defect of the SiC substrate and/or a damage at and in the vicinity of a surface of the SiC substrate; and Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the SiC growth layer.

Abstract: A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the m