Abstract: A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component. (BavBixAyREw)m(TiuTMz)O3??(1) (wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.) 0.01?x?0.15??(2) x?y?0.3??(3) 0?(w+z)?0.01??(4) v+x+y+w=1??(5) u+z=1??(6) 0.950?m?1.050??(7) further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

Abstract: A semiconductor ceramic composition represented by formula (1), (BavBixAyREw)m(TiuTMz)O3??(1), wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; 0.750y?x?1.50y??(2), 0.007?y?0.125??(3), 0?(w+z)?0.010??(4), v+x+y+w=1??(5), u+z=1??(6), 0.950?m?1.050??(7), 0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

Abstract: A semiconductor ceramic composition which is a BaTiO3 based semiconductor ceramic composition, wherein, part of Ba is replaced by at least A (at least one alkali metal element selected from Na and K), Bi and RE (at least one element selected from rare earth elements including Y), and part of Ti is replaced by at least TM (at least one element selected from the group including of V, Nb and Ta), the relationships of 0.7?{(the content of Bi)/(the content of A)}?1.43, 0.017?{(the content of Bi)+(the content of A)}?0.25, and 0<{(the content of RE)+(the content of TM)}?0.01 are satisfied when the total content of Ti and TM is set as 1 mol, the grain sizes have a maximum peak in a grain size distribution in a range of 1.1 ?m to 4.0 ?m or less, and the distribution frequency of the peak is 20% or more.

Abstract: A barium titanate based PTC thermistor ceramic composition without using Pb. Its Curie temperature is shifted to a temperature higher than 120° C. The PTC thermistor can readily turn semiconductive even if it is sintered in air. The resistivity at 25° C. is low and the variation rate of the resistivity at 25° C. with time is little. The PTC thermistor ceramic composition includes a sintered body having a barium titanate based compound represented by formula (1) as the main component, (Ba1-x-y-wBixAyREw)?(Ti1-zTMz)O3 (1), wherein, 1.02y?x?1.5y (2), 0.007?y?0.125 (3), 0?(w+z)?0.01 (4), 0.97???1.06 (5), and the sintered body contains Ca in a ratio of 0.01 mol or more and less than 0.05 mol relative to 1 mol of Ti site in terms of element.

Abstract: A drive circuit (1) according to the present invention is a drive circuit which causes an LED module (4) to emit light, using a dimming signal which is an alternating current signal which has been phase-controlled in response to a dimming level, the drive circuit (1) including a control signal generating unit (8) which integrates a voltage of a rectified dimming signal to generate a control signal for controlling the luminance of the LED module (4), the voltage being greater than or equal to a first voltage and less than or equal to a second voltage less than a maximum voltage of the dimming signal.

Abstract: A driving circuit includes a rectifying and smoothing circuit that rectifies an AC dimming signal, and a voltage conversion circuit including: a switching element having a source connected to a low-potential output terminal of the rectifying and smoothing circuit; a diode having an anode connected to a high-potential output terminal of the rectifying and smoothing circuit; an inductor disposed between the diode and a drain of the switching element; an oscillation controller; a capacitor that is charged by receiving magnetic energy from the inductor when the switching element is OFF, and discharges to a load when the switching element is ON; and a power control circuit that applies a voltage corresponding to a voltage at a high-potential terminal of the capacitor to the oscillation controller as a supply voltage for driving the oscillation controller.

Abstract: A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component. (BavBixAyREw)m(TiuTMz)O3 ??(1) (wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.) 0.01?x?0.15 ??(2) x?y?0.3 ??(3) 0?(w+z)?0.01 ??(4) v+x+y+w=1 ??(5) u+z=1 ??(6) 0.950?m?1.050 ??(7) further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

Abstract: In a DC power supply circuit (1), when an instantaneous value (Vin) of a voltage from a rectifier circuit (2) is higher than or equal to a voltage (VC2) across terminals of a capacitor (C2), in an ON period of a switching element (Q1), current flows along a first current path, from a high-potential output terminal of the rectifier, through a load (11), an inductor (L2), and the switching element in the stated order, and into a low-potential output terminal of the rectifier, and in an OFF period of the switching element, current flows along a second current path, from the high-potential output terminal of the rectifier, through the load, the inductor, a diode (D1), and the capacitor in the stated order, and into the low-potential output terminal of the rectifier.

Abstract: An object is to provide technology that enables an NOx catalyst to exercise its NOx reduction capability satisfactorily at any flow speed of the exhaust gas flowing into the NOx catalyst. An exhaust gas purification apparatus for an internal combustion engine includes a selective catalytic reduction NOx catalyst including at least a first catalyst layer having capability of reducing NOx and a second catalyst layer having oxidation capability and arranged closer to a catalyst substrate than the first catalyst layer. The apparatus has a supply valve for adding a specific addition quantity of reducing agent for reducing NOx to inflowing exhaust gas flowing into the selective catalytic reduction NOx catalyst.

Abstract: A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3??(1), (wherein, A is at least one element from Na or K, RE is at least one element from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element from the group consisting of V, Nb and Ta, and w, x, y, z (each in mol) and the mole ratio m of Ba site to Ti site satisfy the following in equations, 0.007?x?0.125??(2) x<y?2.0x??(3) 0?(w+z)?0.010??(4) 0.940?m?0.999??(5)), and further includes Sr in a proportion of 0.010 mol or more and 0.050 mol or less relative to 1 mol of Ti site, and the mole ratio u of Sr and the mole ratio x of Bi satisfy the following in equation, u?1.8x?0.008??(6).

Abstract: A drive circuit (1) according to the present invention is a drive circuit which causes an LED module (4) to emit light, using a dimming signal which is an alternating current signal which has been phase-controlled in response to a dimming level, the drive circuit (1) including a control signal generating unit (8) which integrates a voltage of a rectified dimming signal to generate a control signal for controlling the luminance of the LED module (4), the voltage being greater than or equal to a first voltage and less than or equal to a second voltage less than a maximum voltage of the dimming signal.

Abstract: A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3 (1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)˜(5), 0.007?x?0.125 (2), x<y?2.0x (3), 0?(w+z)?0.01 (4), 0.94?m?0.999 (5)). And the semiconductor ceramic composition includes Ca in a proportion of 0.01˜0.055 mol in terms of element relative to 1 mol of Ti sites.

Abstract: In a DC power supply circuit, a first period and a second period are alternately repeated a plurality of times during each half cycle of AC supplied to the DC power supply circuit. The first period is a period during which current flows along a first current path extending from an output terminal at a high-potential side of a rectifier circuit to an output terminal at a low-potential side of the rectifier circuit, via an inductor and a switching element. The second period is a period during which current flows along a second current path extending from the output terminal at the high-potential side of the rectifier circuit to the output terminal at the low-potential side of the rectifier circuit, via the inductor, a charging current supply path, and a capacitor.

Abstract: A barium titanate based PTC thermistor ceramic composition without using Pb. Its Curie temperature is shifted to a temperature higher than 120° C. The PTC thermistor can readily turn semiconductive even if it is sintered in air. The resistivity at 25° C. is low and the variation rate of the resistivity at 25° C. with time is little. The PTC thermistor ceramic composition includes a sintered body having a barium titanate based compound represented by formula (1) as the main component, (Ba1-x-y-wBixAyREw)?(Ti1-zTMz)O3 (1), wherein, 1.02y?x?1.5y (2), 0.007?y?0.125 (3), 0?(w+z)?0.01 (4), 0.97???1.06 (5), and the sintered body contains Ca in a ratio of 0.01 mol or more and less than 0.05 mol relative to 1 mol of Ti site in terms of element.

Abstract: A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3 ??(1), (wherein, A is at least one element from Na or K, RE is at least one element from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element from the group consisting of V, Nb and Ta, and w, x, y, z (each in mol) and the mole ratio m of Ba site to Ti site satisfy the following in equations, 0.007?x?0.125 ??(2) x?y?2.0x ??(3) 0?(w+z)?0.010 ??(4) 0.940?m?0.999 ??(5)), and further includes Sr in a proportion of 0.010 mol or more and 0.050 mol or less relative to 1 mol of Ti site, and the mole ratio u of Sr and the mole ratio x of Bi satisfy the following in equation, u?1.8x?0.008 ??(6).

Abstract: A power supply circuit (1) including: rectifying and smoothing circuit (31); transistor (switching element) (37) connected to an output terminal of the rectifying and smoothing circuit (31); transformer (TF1) including primary coil (L36) connected to the transistor (37) and secondary coil (L47) magnetically coupled with the primary coil (L36); current detector circuit (41) detecting current flowing through the transistor (37), and outputting voltage corresponding to the current; voltage output circuit (44) outputting, while the transistor (37) is in a turned-on state, voltage dependent on voltage induced by the secondary coil (L47); and on-off control circuit (57) turning off the transistor (37) when absolute value (Vbe) of a difference between the voltage from the current detector circuit (41) and the voltage from the voltage output circuit (44) is no smaller than threshold voltage (Von), and turning on the transistor (37) when the absolute value (Vbe) is smaller than the threshold voltage (Von).

Abstract: A driving circuit includes a rectifying and smoothing circuit that rectifies an AC dimming signal, and a voltage conversion circuit (1A) including: a switching element having a source connected to a low-potential output terminal of the rectifying and smoothing circuit; a diode having an anode connected to a high-potential output terminal of the rectifying and smoothing circuit; an inductor disposed between the diode and a drain of the switching element; an oscillation controller; a capacitor that is charged by receiving magnetic energy from the inductor when the switching element is OFF, and discharges to a load when the switching element is ON; and a power control circuit that applies a voltage corresponding to a voltage at a high-potential terminal of the capacitor to the oscillation controller as a supply voltage for driving the oscillation controller.

Abstract: In a DC power supply circuit (1), when an instantaneous value (Vin) of a voltage from a rectifier circuit (2) is higher than or equal to a voltage (VC2) across terminals of a capacitor (C2), in an ON period of a switching element (Q1), current flows along a first current path, from a high-potential output terminal of the rectifier, through a load (11), an inductor (L2), and the switching element in the stated order, and into a low-potential output terminal of the rectifier, and in an OFF period of the switching element, current flows along a second current path, from the high-potential output terminal of the rectifier, through the load, the inductor, a diode (D1), and the capacitor in the stated order, and into the low-potential output terminal of the rectifier.

Abstract: A power supply circuit (1) including: rectifying and smoothing circuit (31); transistor (switching element) (37) connected to an output terminal of the rectifying and smoothing circuit (31); transformer (TF1) including primary coil (L36) connected to the transistor (37) and secondary coil (L47) magnetically coupled with the primary coil (L36); current detector circuit (41) detecting current flowing through the transistor (37), and outputting voltage corresponding to the current; voltage output circuit (44) outputting, while the transistor (37) is in a turned-on state, voltage dependent on voltage induced by the secondary coil (L47); and on-off control circuit (57) turning off the transistor (37) when absolute value (Vbe) of a difference between the voltage from the current detector circuit (41) and the voltage from the voltage output circuit (44) is no smaller than threshold voltage (Von), and turning on the transistor (37) when the absolute value (Vbe) is smaller than the threshold voltage (Von).

Abstract: A light bulb-shaped lamp according to the present invention includes: a board on which an LED is mounted; a circuit board on which a drive circuit that turns on the LED is mounted; output wires for supplying power for turning on the LED from the drive circuit to the LED; a pedestal; and a potential-stabilizing wire electrically connecting the pedestal to a circuit ground of the drive circuit.