Abstract: Provided is a piezoelectric film including an AlN crystal, and a first element and a second element doped to the AlN crystal. The first element is an element having an ionic radius larger than an ionic radius of Al. The second element is an element having an ionic radius smaller than the ionic radius of Al. Also provided are piezoelectric film laminated body including an underlayer and a piezoelectric film including ScAlN, and a method of manufacturing the same. The underlayer has a crystal lattice having six-fold symmetry or three-fold symmetry. Also provided are a piezoelectric film including ScAlN having a laminated structure of a hexagonal crystal and a cubic crystal, and a method of manufacturing the same. The cubic crystal is doped with an element other than trivalent element.

Abstract: An object identification method capable of quickly and accurately identifying a virus or the like is provided. An object identification method according to an aspect of the present disclosure includes feeding an object dispersed in a solvent to a micro-channel, and applying an AC (Alternating Current) voltage to a measurement electrode provided at the micro-channel and measuring an AC characteristic of the object when the object passes through the micro-channel. Then, a combined impedance and a phase are determined by using the measured AC characteristic, and the object is identified by using the determined combined impedance and the phase.

Abstract: A power generator includes an electret including a first charged surface and a second charged surface having opposite polarities, a first electrode partially formed on the first charged surface, a second electrode formed on the second charged surface, a third electrode disposed to face the first charged surface with a space, and at least one of a power storage unit or an output unit. The first charged surface has a current collecting surface that is exposed outward. The first electrode and the second electrode form a first power generating unit and the third electrode and the second electrode form a second power generating unit. The electret is formed by polarizing an electret material that includes an inorganic dielectric having a bandgap energy of 4 eV or more.

Abstract: A power generator includes a power generating unit and at least one of a power storage unit or an output unit that is electrically connected to the power generating unit. The power generating unit includes an electret having a first charged surface and a second charged surface that are charged with opposite polarities, a first electrode formed on the first charged surface, and a second electrode formed on the second charged surface. The electret is formed by polarizing an electret material that includes an inorganic dielectric having a bandgap energy of 4 eV or more. At least one of the first electrode or the second electrode are partially disposed on the corresponding charged surface such that at least one of the first charged surface or the second charged surface has a portion as a current collecting surface exposed outward.

Abstract: A conjugate includes a binding substance having an activity to bind to a target substance and a label causing a detectable phenomenon. A molecular weight of the binding substance is less than a molecular weight of an immunoglobulin.

Abstract: A method for detecting a plurality of target substances using a plurality of conjugates each including a binding substance and a label is provided. The binding substance has an activity to bind to one of the target substances and the label causes a detectable phenomenon. The method includes binding at least some of the plurality of conjugates with the plurality of target substances, removing a remainder of the plurality of conjugates that is not bound to the plurality of target substances, and detecting the label. A molecular weight of the binding substance is less than a molecular weight of an immunoglobulin.

Abstract: Provided is a piezoelectric film including an AlN crystal, and a first element and a second element doped to the AlN crystal. The first element is an element having an ionic radius larger than an ionic radius of Al. The second element is an element having an ionic radius smaller than the ionic radius of Al. Also provided are piezoelectric film laminated body including an underlayer and a piezoelectric film including ScAlN, and a method of manufacturing the same. The underlayer has a crystal lattice having six-fold symmetry or three-fold symmetry. Also provided are a piezoelectric film including ScAlN having a laminated structure of a hexagonal crystal and a cubic crystal, and a method of manufacturing the same. The cubic crystal is doped with an element other than trivalent element.

Abstract: A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

Abstract: A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

Abstract: An antenna unit having an antenna coil pattern is disposed in a casing. A sensor unit has a surface acoustic wave detecting element including a first sensing electrode that generates and receives a surface acoustic wave and a first reflector that reflects the surface acoustic wave, which are provided on a substrate configured of a piezoelectric material, and a sensor coil pattern electrically connected to the first sensing electrode and coupled to the antenna coil pattern. The sensor unit is disposed in a pressure receiving portion, and a signal is transmitted between the sensor unit and the antenna unit by wireless communication resulting from a coil coupling.

Abstract: A method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing scandium on a substrate, the method includes: sputtering step for sputtering aluminum and scandium under an atmosphere containing at least a nitrogen gas. In the sputtering step in the method according to the present invention, a scandium content rate falls within the range from 0.5% by atom to 50% by atom when a temperature of the substrate falls within the range from 5° C. to 450° C. during the sputtering step.

Abstract: In a SAW device, a first area placed at a surface of a measurement subject directly under a propagation portion is fixed to the measurement subject, and a second area placed at the surface of the measurement subject directly under both a drive electrode and a reflector is not fixed to the measurement subject. When a strain is generated in the measurement subject, a strain is generated only in the propagation portion, and a phase change is generated in a surface acoustic wave reflected by the reflector. Because the phase change is hardly affected by a temperature change, the strain of the measurement subject can be measured based on the phase change. Because a resonant frequency of the SAW device is changed by the temperature change, but is not affected by the strain of the measurement subject, a temperature can be measured based on a resonant frequency change.

Abstract: To provide a method for producing a filtration filter that can simplify the process for providing clean water or freshwater. By etching silicon substrate 1 using masking film formed on a surface of substrate 1 and having numerous openings to expose portions of the surface, numerous circular holes 2 with an approximate diameter of 100 nm are formed in substrate 1. Diameter (D1) at minimum-diameter portions 4 near the openings of circular holes 2 to be reduced by silica film 3 is adjusted to be 1 nm˜100 nm by depositing silica film 3 on the inner surfaces of circular holes 2.

Abstract: Provided is a water treatment device with which organic substances contained in raw water to be treated are decomposed to thereby alleviate the load to be imposed on a downstream filter and with which it is possible to avoid corrosion of the piping or the like.

Abstract: In a SAW oscillator, each of a first SAW element and a second SAW element includes interdigital electrodes and a reflector formed on a piezoelectric material. A first oscillating circuit part forms an oscillating loop including the first SAW element. A second oscillating circuit part forms an oscillating loop including the second SAW element. The first and second oscillating circuit parts have an identical admittance property. The first and second SAW elements are configured that an electrode pitch is identical and an admittance property indicating a relation between a frequency and an admittance value is different therebetween. Further, a first intersection point between the admittance property of the first SAW element and the admittance property of the first oscillating circuit part and a second intersection point between the admittance property of the second SAW element and the admittance property of the second oscillating circuit part are at different frequencies.

Abstract: In a SAW device, a first area placed at a surface of a measurement subject directly under a propagation portion is fixed to the measurement subject, and a second area placed at the surface of the measurement subject directly under both a drive electrode and a reflector is not fixed to the measurement subject. When a strain is generated in the measurement subject, a strain is generated only in the propagation portion, and a phase change is generated in a surface acoustic wave reflected by the reflector. Because the phase change is hardly affected by a temperature change, the strain of the measurement subject can be measured based on the phase change. Because a resonant frequency of the SAW device is changed by the temperature change, but is not affected by the strain of the measurement subject, a temperature can be measured based on a resonant frequency change.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device includes: a substrate having a plane surface; multiple first electrodes formed on the plane surface of the substrate; and multiple second electrodes formed on the plane surface of the substrate. Each of the first and second electrodes has a predetermined closed ring shape. The first and second electrodes are concentric. The second electrodes are located radially inside or radially outside of the first electrodes.

Abstract: An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.

Abstract: A surface acoustic wave element includes a piezoelectric member, a comb-teeth electrode, and a reflector. The comb-teeth electrode is arranged on the piezoelectric member. The reflector is arranged on the piezoelectric member. The reflector reflects a surface acoustic wave transmitted from the comb-teeth electrode. The reflector has a plurality of areas, and each of the areas has a frequency to make a reflection efficiency the largest. At least two of the frequencies of the areas are made different from each other.

Abstract: A yaw rate sensor has two sets of exciting electrodes, perturbative weights and two sets of detecting electrodes on a surface of a piezoelectric substrate. The exciting electrodes excite first surface acoustic waves transmitted through the surface of the substrate in a propagation direction. The weights are oscillated by the waves and excite a second surface acoustic wave, transmitted through the surface of the substrate in a detection direction orthogonal to the propagation direction, in response to a yaw applied to the weights. The detecting electrodes measure an intensity of the second surface acoustic wave to detect the yaw rate. The sets of exciting electrodes are symmetrically placed with respect to a driving axis extending straight along the propagation direction. The group of weights is symmetric with respect to the driving axis.