Patents by Inventor Kazuhiko KOMURA
Kazuhiko KOMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240111466Abstract: A program stored in a non-transitory medium and being executable by a computer of an information processing apparatus causes the computer to: execute a reading process for reading a plurality of pieces of text data arranged in one column or in one row; and be ready to accept a first operation by a user. In a case of accepting the first operation, the program causes the computer to execute: an obtaining process for obtaining a number of pieces of text objects to be included in specific label data; a generating process for extracting text data by the number of pieces obtained in the obtaining process, and for generating specific records each consisting of the number of pieces of text data; and an auto associating process for associating each text data included in each of the records with one of the text objects included in the specific label data.Type: ApplicationFiled: September 27, 2023Publication date: April 4, 2024Inventors: Fuyuko ITO, Jun KOMURA, Kazuhiko KONDO, Ryoji BAN
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Publication number: 20240111978Abstract: A non-transitory medium storing a program executable by a computer of an information processing apparatus, the program, when executed by the computer, causing the computer to execute: a designating process for designating a database file including a plurality of text data; an associating process for associating the database file designated in the designating process with a text object; and a specific printing process for generating label data, for each of the text data included in the database file, with each of the text data written in the text object, and for causing a label printer to execute printing based on the label data generated.Type: ApplicationFiled: September 27, 2023Publication date: April 4, 2024Inventors: Fuyuko ITO, Jun KOMURA, Kazuhiko KONDO
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Patent number: 9170493Abstract: A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.Type: GrantFiled: August 28, 2013Date of Patent: October 27, 2015Assignee: JSR CORPORATIONInventors: Shin-ya Minegishi, Kazuhiko Komura, Shin-ya Nakafuji, Takanori Nakano
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Publication number: 20150198882Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.Type: ApplicationFiled: May 29, 2014Publication date: July 16, 2015Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Satoru MURAKAMI, Yoshio TAKIMOTO, Kazuhiko KOMURA, Masayuki MOTONARI, Katsuhisa MIZOGUCHI
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Patent number: 9046769Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: September 4, 2014Date of Patent: June 2, 2015Assignee: JSR CORPORATIONInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 9029069Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: GrantFiled: March 29, 2012Date of Patent: May 12, 2015Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20140371466Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: September 4, 2014Publication date: December 18, 2014Applicant: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 8871432Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).Type: GrantFiled: March 28, 2013Date of Patent: October 28, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Satoru Murakami, Yushi Matsumura, Kazuhiko Komura, Yoshio Takimoto, Shin-ya Nakafuji, Kyoyu Yasuda
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Patent number: 8859185Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: GrantFiled: July 22, 2013Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Patent number: 8859191Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: May 8, 2012Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20140272722Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.Type: ApplicationFiled: May 29, 2014Publication date: September 18, 2014Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Satoru MURAKAMI, Yoshio TAKIMOTO, Kazuhiko KOMURA, Masayuki MOTONARI, Katsuhisa MIZOGUCHI
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Publication number: 20130341304Abstract: A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.Type: ApplicationFiled: August 28, 2013Publication date: December 26, 2013Applicant: JSR CORPORATIONInventors: Shin-ya MINEGISHI, Kazuhiko KOMURA, Shin-ya NAKAFUJI, Takanori NAKANO
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Publication number: 20130310514Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: ApplicationFiled: July 22, 2013Publication date: November 21, 2013Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA
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Patent number: 8513133Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: GrantFiled: August 30, 2011Date of Patent: August 20, 2013Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120285929Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: May 8, 2012Publication date: November 15, 2012Applicant: JSR CorporationInventors: Yushi MATSUMURA, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20120270157Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: ApplicationFiled: March 29, 2012Publication date: October 25, 2012Applicant: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120252217Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2 ??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: ApplicationFiled: August 30, 2011Publication date: October 4, 2012Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA