Patents by Inventor Kazuhiko Matsumura

Kazuhiko Matsumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030144138
    Abstract: A novel phosphine compound having excellent properties (chemical selectivity, enantioselectivity, catalytic activity) as a catalyst for asymmetric syntheses, especially asymmetric hydrogenation.
    Type: Application
    Filed: November 12, 2002
    Publication date: July 31, 2003
    Inventors: Kazuhiko Matsumura, Takao Saito
  • Publication number: 20030139285
    Abstract: A phosphine compound having excellent properties (chemical selectivity, enantioselectivity, catalytic activity) as a catalyst for asymmetric syntheses, especially asymmetric hydrogenations.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 24, 2003
    Inventors: Kazuhiko Matsumura, Takao Saito
  • Publication number: 20030127722
    Abstract: In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.
    Type: Application
    Filed: February 24, 2003
    Publication date: July 10, 2003
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Yukiko Nakaoka, Kazuhiko Matsumura, Hideyuki Kaneko, Koichi Nagao
  • Publication number: 20030120067
    Abstract: A novel process for producing an optically active amide excellent in chemical selectivity and enantioselectivity by asymmetric hydrogenation of an &agr;,&bgr;-unsaturated amide and also allowing the reaction to proceed efficiently even when a trace amount of a catalyst is used relative to the substrate as compared with the amount in a conventional process. An optically active amide is produced by asymmetric hydrogenation of an &agr;,&bgr;-unsaturated amide derivative in the presence of a transition metal complex containing a specific phosphine-phosphorane compound.
    Type: Application
    Filed: July 22, 2002
    Publication date: June 26, 2003
    Applicant: TAKASAGO INTERNATIONAL CORPORATION
    Inventors: Kazuhiko Matsumura, Takao Saito
  • Patent number: 6583512
    Abstract: In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.
    Type: Grant
    Filed: October 1, 2001
    Date of Patent: June 24, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yukiko Nakaoka, Kazuhiko Matsumura, Hideyuki Kaneko, Koichi Nagao
  • Patent number: 6558977
    Abstract: In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.
    Type: Grant
    Filed: April 24, 2002
    Date of Patent: May 6, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yukiko Nakaoka, Kazuhiko Matsumura, Hideyuki Kaneko, Koichi Nagao
  • Patent number: 6534874
    Abstract: Through holes are provided in the inner electrodes of a second semiconductor chip, electrodes capable of being plated by electroless plating are formed on the inner walls of the through holes while being insulated from other electrodes, the second semiconductor chip is secured with an adhesive to a first semiconductor chip at portions other than the outer electrodes and the inner electrodes of the first semiconductor chip so that the inner electrodes of the first semiconductor chip are aligned with the inner electrodes of the second semiconductor chip, and the inner electrodes and the electrodes on the inner walls of the through holes are electrically connected to each other by continuously extending metals having the same composition. Therefore, a plurality of chips can be stacked without being damaged.
    Type: Grant
    Filed: October 17, 2000
    Date of Patent: March 18, 2003
    Assignee: Matsushita Electronics Corporation
    Inventor: Kazuhiko Matsumura
  • Publication number: 20030032216
    Abstract: A semiconductor device includes a first semiconductor chip provided with a first electrode on a first main surface and a second semiconductor chip provided with a second electrode on a second main surface. The first and the second semiconductor chips are integrated so that the first and second main surfaces are opposed to one another and the first and second electrodes are electrically connected. The second semiconductor chip is polished from the opposite side of the second main surface so that the second semiconductor chip has a thickness smaller than the thickness of the first semiconductor chip.
    Type: Application
    Filed: February 5, 2002
    Publication date: February 13, 2003
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yukiko Nakaoka, Kazuhiko Matsumura, Hideyuki Kaneko, Koichi Nagao, Hiroaki Fujimoto
  • Patent number: 6492545
    Abstract: A novel process in which an optically active alcohol compound having a desired absolute configuration and a high optical purity can be obtained by asymmetrically hydrogenating a &bgr;-keto acid compound through a simple operation. An optically active alcohol represented by general formula (III) as defined is obtained by asymmetrically hydrogenating a &bgr;-keto ester compound represented by general formula (I) as defined in the presence of at least one ruthenium complex having as a ligand an optically active tertiary diphosphine compound represented by general formula (II) as defined.
    Type: Grant
    Filed: July 23, 2001
    Date of Patent: December 10, 2002
    Assignee: Takasago International Corporation
    Inventors: Takao Saito, Tohru Yokozawa, Kazuhiko Matsumura, Noboru Sayo
  • Publication number: 20020115233
    Abstract: In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.
    Type: Application
    Filed: April 24, 2002
    Publication date: August 22, 2002
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Yukio Nakaoka, Kazuhiko Matsumura, Hideyuki Kaneko, Koichi Nagao
  • Publication number: 20020079590
    Abstract: In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.
    Type: Application
    Filed: October 1, 2001
    Publication date: June 27, 2002
    Inventors: Yukiko Nakaoka, Kazuhiko Matsumura, Hideyuki Kaneko, Koichi Nagao
  • Publication number: 20020035283
    Abstract: A novel process in which an optically active alcohol compound having a desired absolute configuration and a high optical purity can be obtained by asymmetrically hydrogenating a &bgr;-keto acid compound through a simple operation. An optically active alcohol represented by general formula (III) as defined is obtained by asymmetrically hydrogenating a &bgr;-keto ester compound represented by general formula (I) as defined in the presence of at least one ruthenium complex having as a ligand an optically active tertiary diphosphine compound represented by general formula (II) as defined.
    Type: Application
    Filed: July 23, 2001
    Publication date: March 21, 2002
    Applicant: TAKASAGO INTERNATIONAL CORPORATION
    Inventors: Takao Saito, Tohru Yokozawa, Kazuhiko Matsumura, Noboru Sayo
  • Patent number: 6184381
    Abstract: This document describes a novel and practically excellent process for the preparation of optically active compounds, such as optically active alcohols or amines which are useful for various applications, for example, as synthetic intermediates of pharmaceuticals, liquid crystal materials, and reagents for optical resolution, wherein a hydrogen transfer type asymmetric reduction is carried out in the presence of both a transition metal complex and an optically active nitrogen compound or a transition metal complex having an optically active nitrogen compounds as an asymmetric ligand, and a hydrogen-donating organic or inorganic compound.
    Type: Grant
    Filed: September 29, 1998
    Date of Patent: February 6, 2001
    Assignees: Japan Science & Technology Corp., NKK Corp., Takeda Chemical Industries, Asahi Kasei Kogyo Kabushiki Kaisha, Takasago Intl. Corp.
    Inventors: Takao Ikariya, Shohei Hashiguchi, Jun Takehara, Nobuyuki Uematsu, Kazuhiko Matsumura, Ryoji Noyori, Akio Fujii
  • Patent number: 6107120
    Abstract: A method of making semiconductor devices with contacts protruding from openings in a passivation layer over an active chip area. Inside each opening, a relatively hard barrier layer is provided and a flash-plated film is applied to subsequently form a relatively soft diffusion barrier layer when a protruding contact is formed. Two semiconductor devices with electrodes are joined by embedding relatively hard electrodes of a first device into relatively soft electrodes of a second device. A reducing agent can be incorporated into an insulating resin applied between semiconductor chips at areas other than the bonded electrodes.
    Type: Grant
    Filed: March 23, 1999
    Date of Patent: August 22, 2000
    Assignee: Matsushita Electric Indsutrial Co., Ltd.
    Inventors: Takashi Ohtsuka, Tetsuo Kawakita, Kazuhiko Matsumura, Hiroaki Fujimoto
  • Patent number: 5952718
    Abstract: A semiconductor device having a protection layer covering the active layer of a semiconductor chip with an opening therein corresponding in location to a chip electrode located on the active surface of the semiconductor chip. Inside the opening a barrier layer covers the chip electrode, a diffusion barrier layer covers the barrier layer and a protruding contact protruding from the diffusion barrier layer. The protruding contact preferably comprises material whose hardness is lower than that of each of the barrier layer and chip electrode.
    Type: Grant
    Filed: February 24, 1997
    Date of Patent: September 14, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takashi Ohtsuka, Tetsuo Kawakita, Kazuhiko Matsumura, Hiroaki Fujimoto
  • Patent number: 5847222
    Abstract: The present invention provides a ligand for a novel catalyst superior in such characteristics as selectivity (chemoselectivity and enantioselectivity) and catalytic activity in asymmetric synthesis reactions and a ligand for a novel catalyst effective in an asymmetric hydrogenation reaction in particular. The ligand is an optically active diphosphine compound represented by the following formula: ##STR1## where Ph is a phenyl group, X is a chlorine or bromine atom, and R.sup.1 and R.sup.2 are each an alkyl group having 1 to 3 carbon atoms.
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: December 8, 1998
    Assignee: Takasago International Corporation
    Inventors: Tohru Yokozawa, Noboru Sayo, Kazuhiko Matsumura, Hidenori Kumobayashi
  • Patent number: 5824822
    Abstract: A phosphine-phosphinite compound represented by formula (I): ##STR1## wherein R.sup.1 and R.sup.2, which may be the same or different, each represent a substituted or unsubstituted phenyl group or a substituted or unsubstituted naphthyl group, and a process for preparing a 4-?(R)-1'-formylethyl!azetidin-2-one derivative using the compound (I). The compound (I), either in combination, or as a complex, with a transition metal compound, is useful as a catalyst for asymmetric hydroformylation and makes it possible to easily synthesize an important intermediate for carbapenem antibiotics or a precursor thereof at high regioselectivity and diastereo-selectivity.
    Type: Grant
    Filed: July 9, 1996
    Date of Patent: October 20, 1998
    Assignee: Takasago International Corporation
    Inventors: Takao Saito, Akifumi Yoshida, Kazuhiko Matsumura, Takashi Miura, Hidenori Kumobayashi
  • Patent number: 5811351
    Abstract: The main surface of a first semiconductor chip having a first functional element is formed with first testing electrodes for testing the electrical characteristics of the first functional element and first connecting electrodes electrically connected to the first functional element. The main surface of a second semiconductor chip having a second functional element is formed with second testing electrodes for testing the electrical characteristics of the second functional element and second connecting electrodes electrically connected to the second functional element. The first semiconductor chip and the second semiconductor chip are integrated by using an insulating resin, with first bumps formed on the first connecting electrodes being bonded to third bumps formed on the second connecting electrodes.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: September 22, 1998
    Assignees: Matsushita Electric Industrial Co., Ltd., Matsushita Electronics Corporation
    Inventors: Tetsuo Kawakita, Kazuhiko Matsumura, Ichiro Yamane
  • Patent number: 5785415
    Abstract: There is provided an LED display device which can improve maintenance properties accompanied by tightening and loosening of screws, and which can prevent deterioration in waterproof effect due to an over-tightening of screws in screw-fixing process. This LED display device includes a base plate having LED devices arrayed on its front surface, holes for screws bored through from front surface to rear surface, and a projecting portion formed around the holes within the rear surface so as to surround the holes, and a rubber packing placed between the projecting portion and the holes and having a thickness in its non-compressed state larger than a size of projection of the projecting portion. The screw is inserted into the hole from the front surface of the base plate, and into the hole of the chassis, whereby the base plate is fixed to the chassis. By the presence of the projecting portion, the screw packing and the rubber packing are prevented from over-compression.
    Type: Grant
    Filed: March 12, 1996
    Date of Patent: July 28, 1998
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuhiko Matsumura, Kazunori Hoshi, Katsushi Watanabe
  • Patent number: 5734199
    Abstract: The main surface of a first semiconductor chip having a first functional element is formed with first testing electrodes for testing the electrical characteristics of the first functional element and first connecting electrodes electrically connected to the first functional element. The main surface of a second semiconductor chip having a second functional element is formed with second testing electrodes for testing the electrical characteristics of the second functional element and second connecting electrodes electrically connected to the second functional element. The first semiconductor chip and the second semiconductor chip are integrated by using an insulating resin, with first bumps formed on the first connecting electrodes being bonded to third bumps formed on the second connecting electrodes.
    Type: Grant
    Filed: December 17, 1996
    Date of Patent: March 31, 1998
    Assignees: Matsushita Electric Industrial Co., Ltd., Matsushita Electronics Corporation
    Inventors: Tetsuo Kawakita, Kazuhiko Matsumura, Ichiro Yamane