Patents by Inventor Kazuhiko Nakadate
Kazuhiko Nakadate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230411416Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: July 20, 2023Publication date: December 21, 2023Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 11756971Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: GrantFiled: December 22, 2022Date of Patent: September 12, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Publication number: 20230136655Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: December 22, 2022Publication date: May 4, 2023Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 11552114Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: GrantFiled: May 14, 2021Date of Patent: January 10, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Publication number: 20210272992Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: May 14, 2021Publication date: September 2, 2021Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 11031421Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: GrantFiled: February 23, 2018Date of Patent: June 8, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Publication number: 20200083266Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: February 23, 2018Publication date: March 12, 2020Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 8580652Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.Type: GrantFiled: September 3, 2010Date of Patent: November 12, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Atsuko Kawasaki, Kenichiro Hagiwara, Ikuko Inoue, Kazutaka Akiyama, Itsuko Sakai, Mie Matsuo, Masahiro Sekiguchi, Yoshiteru Koseki, Hiroki Neko, Koushi Tozuka, Kazuhiko Nakadate, Takuto Inoue
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Publication number: 20120153418Abstract: According to one embodiment, a solid-state imaging device includes photodiodes provided in a substrate, and includes semiconductor regions of a first conductivity type, respectively, and an element isolation region provided in the substrate, includes a semiconductor region of a second conductivity type, and configured to electrically isolate the photodiodes from each other. The element isolation region is tilted in a direction of the center of an image area in which the photodiodes are arrayed.Type: ApplicationFiled: September 16, 2011Publication date: June 21, 2012Inventor: Kazuhiko NAKADATE
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Publication number: 20110068476Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.Type: ApplicationFiled: September 3, 2010Publication date: March 24, 2011Inventors: Atsuko KAWASAKI, Kenichiro Hagiwara, Ikuko Inoue, Kazutaka Akiyama, Itsuko Sakai, Mie Matsuo, Masahiro Sekiguchi, Yoshiteru Koseki, Hiroki Neko, Koushi Tozuka, Kazuhiko Nakadate, Takuto Inoue