Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a small strength. A package for semiconductor devices is formed as a laminate (20) of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole regions or some regions of the insulating resin layers (20d to 20f) of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: A pad structure for a circuit board including a phosphorus-containing nickel layer is provided, capable of improving a tensile strength of a solder member such as a solder ball mounted thereon or a foreign member soldered thereto. The pad structure (40) is a multi-layer plated structure provided in a conductor pattern of the substrate, for mounting the solder bump (20) thereon, and formed as part of the conductor pattern, including a metal layer (10) formed as part of the conductor pattern to constitute a pad body, a phosphorus-containing nickel layer (12) formed by an electroless nickel plating to be directly brought into contact with the metal layer, a copper layer (14) thinner than the nickel layer, formed on the nickel layer by an electroless copper plating, and a precious metal layer (16) formed on the copper layer by an electroless precious metal plating.

Abstract: To prevent the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a small strength. A package for semiconductor devices is formed as a laminate (20) of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole regions or some regions of the insulating resin layers (20d to 20f) of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: A metal core substrate comprises a core layer (10) consisting of first and second metal plates (11, 12) layered with a third insulating layer (13) interposed therebetween; first and second insulating layers (20, 21) formed on the first and metal plates, respectively; first and second wiring patterns (45, 46) formed on the first and second insulating layers, respectively. A conductive layer (40) formed in a through-hole (22) penetrates the first insulating layer, the first metal plate, the third insulating layer, the second metal plate and the second insulating layer for electrically connecting the first wiring pattern with the second wiring pattern. The first metal plate (11) is electrically connected with the first wiring pattern (45) and the second wiring pattern (46), respectively, by means of a via (44) and by means a via (43).

Abstract: A metal core substrate comprises a core layer (10) consisting of first and second metal plates (11, 12) layered with a third insulating layer (13) interposed therebetween; first and second insulating layers (20, 21) formed on the first and metal plates, respectively; first and second wiring patterns (45, 46) formed on the first and second insulating layers, respectively. A conductive layer (40) formed in a through-hole (22) penetrates the first insulating layer, the first metal plate, the third insulating layer, the second metal plate and the second insulating layer for electrically connecting the first wiring pattern with the second wiring pattern. The first metal plate (11) is electrically connected with the first wiring pattern (45) and the second wiring pattern (46), respectively, by means of a via (44) and by means a via (43).