Patents by Inventor Kazuhiko Senda

Kazuhiko Senda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120132889
    Abstract: A high luminance semiconductor light emitting device and fabrication method thereof, wherein a metallic reflecting layer is formed using a non-transparent semiconductor substrate. The device includes a light emitting diode structure on a GaAs substrate structure bonded together using a first and a third metal layers. The substrate includes a GaAs layer, a first metal buffer layer on a surface of the GaAs layer, the first metal layer on the first metal buffer layer, and a second metal buffer layer and a second metal layer at a back side of the GaAs layer. The diode structure includes the third metal layer, a metal contact layer on the third metal layer, a p-type cladding layer on the metal contact layer, a multi-quantum well layer on the p-type cladding layer, an n-type cladding layer on the multi-quantum well layer, and a window layer on the n-type cladding layer.
    Type: Application
    Filed: December 16, 2011
    Publication date: May 31, 2012
    Applicant: ROHM CO., LTD.
    Inventors: Masakazu TAKAO, Mitsuhiko Sakai, Kazuhiko Senda
  • Patent number: 8106412
    Abstract: The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal buffer layer, and a second metal buffer layer (4) and a second metal layer (5) disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (12), a metal contact layer (11) disposed on the third metal layer, a p type cladding layer (10) disposed on the metal contact layer, a multi-quantum well layer (9) disposed on the p type cladding layer, an n type cladding layer (8) disposed on the multi-quantum well layer, and a window layer 7 disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer (1) and the third metal layer (12).
    Type: Grant
    Filed: April 11, 2008
    Date of Patent: January 31, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Masakazu Takao, Mitsuhiko Sakai, Kazuhiko Senda
  • Publication number: 20100133507
    Abstract: A high luminance semiconductor light emitting device and a fabrication method for the same are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate.
    Type: Application
    Filed: April 11, 2008
    Publication date: June 3, 2010
    Applicant: ROHM CO., LTD. .
    Inventors: Masakazu Takao, Mitsuhiko Sakai, Kazuhiko Senda
  • Publication number: 20100133506
    Abstract: Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN/GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.
    Type: Application
    Filed: June 13, 2008
    Publication date: June 3, 2010
    Applicant: ROHM CO., LTD.
    Inventors: Yasuo Nakanishi, Shunji Nakata, Tetsuya Fujiwara, Kazuhiko Senda, Masayuki Sonobe
  • Publication number: 20090101933
    Abstract: A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided.
    Type: Application
    Filed: October 10, 2008
    Publication date: April 23, 2009
    Applicant: ROHM CO., LTD.
    Inventors: Masakazu Takao, Kazuhiko Senda
  • Publication number: 20080210958
    Abstract: A semiconductor white light emitting device including: a semiconductor light emitting element having green and blue light emitting layers containing In; and a phosphor capable of emitting red light.
    Type: Application
    Filed: November 26, 2007
    Publication date: September 4, 2008
    Applicant: ROHM CO., LTD.
    Inventors: Kazuhiko Senda, Shunji Nakata
  • Publication number: 20080149950
    Abstract: An optical communication semiconductor device including: a first light emitting layer composed of a semiconductor; and a second light emitting layer which is laid on or above the first light emitting layer and composed of a semiconductor capable of emitting light having a emission peak at a wavelength different from that of light emitted by the first light emitting layer.
    Type: Application
    Filed: November 26, 2007
    Publication date: June 26, 2008
    Applicant: ROHM CO., LTD.
    Inventors: Kazuhiko Senda, Shunji Nakata