Patents by Inventor Kazuhiko Shimanuki

Kazuhiko Shimanuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8071920
    Abstract: A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: December 6, 2011
    Assignees: Covalent Materials Corporation, Tokyo Electron Limited
    Inventors: Kazuhiko Shimanuki, Daisuke Hayashi
  • Publication number: 20090159587
    Abstract: A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.
    Type: Application
    Filed: November 13, 2008
    Publication date: June 25, 2009
    Inventors: Kazuhiko SHIMANUKI, Daisuke HAYASHI
  • Patent number: 7336892
    Abstract: It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 ?m, said at least one side 2a formed grooves 2c therein.
    Type: Grant
    Filed: March 20, 2003
    Date of Patent: February 26, 2008
    Assignees: Covalent Materials Corporation, Tokyo Electron Limited
    Inventors: Kazuhiko Shimanuki, Hiroyuki Honma, Norihiko Saito, Hideyuki Yokoyama, Takanori Saito, Ken Nakao
  • Publication number: 20030184696
    Abstract: It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 &mgr;m, said at least one side 2a formed grooves 2c therein.
    Type: Application
    Filed: March 20, 2003
    Publication date: October 2, 2003
    Applicants: TOSHIBA CERAMICS CO., LTD., TOKYO ELECTRON LIMITED
    Inventors: Kazuhiko Shimanuki, Hiroyuki Honma, Norihiko Saito, Hideyuki Yokoyama, Takanori Saito, Ken Nakao
  • Patent number: 5849597
    Abstract: A treatment apparatus for analyzing the impurities in silicic material with high precision, includes a container having an inner space in which at least one analysis sample container and a sample decomposing solution are accommodated. The container is divided into a lid body and a lower body, each of the lid body and the lower body being opened at the division surface side thereof to form an open end and being closed at the surface side opposite to the division surface side to form a close end thereof. The inner peripheral surface of the open end of the lower body is formed in a stepwise shape so that the analysis sample container is disposed to be spaced from the surface of the decomposing solution which is stocked in the lower body, and the inner peripheral surfaces of the lid body and the lower body are smoothly continuously threadily engaged with each other through abutment faces thereof to keep the container in an appropriate hermetic level.
    Type: Grant
    Filed: December 18, 1996
    Date of Patent: December 15, 1998
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Fumio Tokuoka, Kazuhiko Shimanuki