Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.

Abstract: A residue treatment system includes a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.

Abstract: A method for cleaning a wafer includes measuring a cross-sectional shape of an edge portion of wafer cut along a radial direction, assigning the measured shape to one of a plurality of groups classified by the shapes, determining an amount of cleaning liquid to be supplied and rotational speed at which the wafer is rotated depending a determination criterion, rotating the wafer and spraying the cleaning liquid toward a back face of the rotating wafer, and cleaning the edge portion and the back face of the wafer by spreading the cleaning liquid to the edge portion of the wafer.

Abstract: A method for cleaning a wafer includes measuring a cross-sectional shape of an edge portion of wafer cut along a radial direction, assigning the measured shape to one of a plurality of groups classified by the shapes, determining an amount of cleaning liquid to be supplied and rotational speed at which the wafer is rotated depending a determination criterion, rotating the wafer and spraying the cleaning liquid toward a back face of the rotating wafer, and cleaning the edge portion and the back face of the wafer by spreading the cleaning liquid to the edge portion of the wafer.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: This disclosure concerns a residue treatment system including a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.

Abstract: This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.

Abstract: A method for cleaning a wafer includes measuring a cross-sectional shape of an edge portion of wafer cut along a radial direction, assigning the measured shape to one of a plurality of groups classified by the shapes, determining an amount of cleaning liquid to be supplied and rotational speed at which the wafer is rotated depending a determination criterion, rotating the wafer and spraying the cleaning liquid toward a back face of the rotating wafer, and cleaning the edge portion and the back face of the wafer by spreading the cleaning liquid to the edge portion of the wafer.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: Provided is a semiconductor device capable of dealing with various debug patterns, of knowing whether or not an operation of each module is stopped when debugging is performed, and of retaining or restoring an internal state of the module which is obtained immediately after the stop. The semiconductor device includes a CPU (11), a video decoder (12), an audio decoder (13), an IO processor (14) and a memory (15). These modules are connected through a bus line (16) to receive and send a signal therebetween. The CPU (11), the video decoder (12), the audio decoder (13) and the IO processor (14) are connected to a debug control circuit (17) through a group of signal lines (18), respectfully. The debug control circuit (17) outputs a stop signal (S1) and a stop notice signal (S2) indicating that operations of all the modules are stopped.

Abstract: There is provided a substrate cleaning/drying equipment for removing residual moisture from a substrate by exposing the substrate to an IPA steam after the substrate has been cleaned by a ultra pure water. The substrate cleaning/drying equipment comprises a cleaning/drying chamber for cleaning/drying the substrate, a cleaning tub which is provided below the cleaning/drying chamber and to which at least a ultra pure water is supplied, an IPA steam supplying pipe for supplying the IPA steam to an upper area of the cleaning/drying chamber such that the upper area of the cleaning/drying chamber is filled with the IPA steam, a steam supplying pipe for supplying a steam between the ultra pure water in the cleaning tub and the IPA steam, and a carrying unit for carrying the substrate, which has been cleaned by the ultra pure water, from the ultra pure water into the IPA steam via the steam.

Abstract: For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.

Abstract: In a method of removing a polymer and the leavings of the resist pattern that have adhered during dry etching to a film formed on a semiconductor substrate, the etched film undergoes plasma etching with the resist patter as a mask. Next, the resist pattern is removed by O.sub.2 plasma ashing and then the surface of the substrate is washed with pure water. Thereafter, with the substrate heated to 40.degree. C. or higher, the surface of the substrate is exposed to HF vapor and then the surface of the substrate is rinsed with pure water. With this method, the polymer and the leavings of the resist pattern that have adhered to the etched film can be removed easily.