Abstract: A thin-film transistor includes: a gate electrode; a gate insulating film disposed on the gate electrode; an oxide semiconductor layer disposed on the gate insulating film and having a channel region located to face the gate electrode; a channel protective layer disposed on the gate insulating film and the oxide semiconductor layer; and source and drain electrodes each connected to the oxide semiconductor layer through a connection hole formed in the channel protective layer, in which the oxide semiconductor layer has, in a part of the channel region, a narrow region with a narrower width than a width of the connection hole.

Abstract: A thin film transistor including: a channel layer mainly containing a conductive oxide semiconductor; a pair of electrodes on the channel layer; and a protective film covering an exposed surface of the channel layer, exposed to the gap between the pair of electrodes. The protective film includes at least an oxygen transmission film in contact with the channel layer, and an oxygen disturbance film hardly transmitting oxygen in comparison with the oxygen transmission film, in this order from the channel layer side. A length of the oxygen disturbance film in a direction where the pair of electrodes face each other is equal to or larger than a value obtained by multiplying a width of the pair of electrodes in a direction orthogonal to the direction where the pair of electrodes face each other by 0.55.

Abstract: This invention relates to a method for manufacturing a cation exchange resin, wherein the method includes the steps of: copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer to obtain a cross-linked copolymer; specifying a content of a leachable compound represented by formula (I) to be 400 ?g or less relative to 1 g of the cross-linked copolymer, wherein Z represents a hydrogen atom or an alkyl group, and l represents a natural number; and then sulfonating the cross-linked copolymer to form a sulfonylated cross-linked copolymer.

Abstract: The invention relates to a method for manufacturing an anion exchange resin, wherein the method includes the step of contacting a water soluble polymer containing an anionic dissociative group with a resin to produce an anion exchange resin. In the method, an amount of contact of the water soluble polymer is 0.01 to 10 mmol/L, in terms of an amount of the anionic dissociative group, relative to 1 liter of the anion exchange resin, and a wafer surface flatness (Rms) of the anion exchange resin is 4 ? or less, determined by a silicon wafer test.

Abstract: A display apparatus including: a plurality of thin film transistors; and an interconnect region, wherein each of the thin film transistors includes a first protective film held in contact with a channel layer and disposed remotely from a gate electrode, a second protective film disposed on the first protective film, and a source and drain electrode assembly including a pair of electrodes held in contact with the channel layer, and the interconnect region includes a first interconnect, a second interconnect disposed in alignment with the first interconnect, and an insulating layer interposed between the first interconnect and the second interconnect and having a stacked structure including a first insulating film joined to the gate insulating film and a second insulating film joined to the second protective film.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: A method for manufacturing an anion exchange resin, in which remaining of impurities and generation of decomposition products are suppressed and leachables are reduced, the method including the following steps (1-a) to (1-e) of: (1-a) obtaining a cross-linked copolymer by copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer; (1-b) specifying the content of a specific leachable compound to be 400 ?g or less relative to 1 g of the cross-linked copolymer; (1-c) haloalkylating the cross-linked copolymer so as to introduce 80 percent by mole or less of haloalkyl group relative to the monovinyl aromatic monomer; (1-d) removing a specific leachable compound from the haloalkylated cross-linked copolymer; and (1-e) subjecting the haloalkylated cross-linked copolymer to a reaction with an amine compound.

Abstract: The present invention provides a thin film transistor realizing improved reliability by suppressing deterioration in electric characteristics. The thin film transistor includes an oxide semiconductor film forming a channel; a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film; and a pair of electrodes formed as a source electrode and a drain electrode in contact with the oxide semiconductor film and obtained by stacking at least first and second metal layers in order from the side of the oxide semiconductor film The first metal layer is made of a metal having ionization energy equal to or higher than molybdenum (Mo), a metal having oxygen barrier property, or a nitride or a silicon nitride of the metal having oxygen barrier property.

Abstract: A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.

Abstract: A thin film transistor that includes an oxide semiconductor film forming a channel, a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film and a pair of electrodes formed as a source region and a drain region.

Abstract: The invention relates to a method for manufacturing an anion exchange resin, wherein the method includes the step of contacting a water soluble polymer containing an anionic dissociative group with a resin to produce an anion exchange resin. In the method, an amount of contact of the water soluble polymer is 0.01 to 10 mmol/L, in terms of an amount of the anionic dissociative group, relative to 1 liter of the anion exchange resin, and a wafer surface flatness (Rms) of the anion exchange resin is 4 ? or less, determined by a silicon wafer test.

Abstract: A display apparatus including: a plurality of thin film transistors; and an interconnect region, wherein each of the thin film transistors includes a first protective film held in contact with a channel layer and disposed remotely from a gate electrode, a second protective film disposed on the first protective film, and a source and drain electrode assembly including a pair of electrodes held in contact with the channel layer, and the interconnect region includes a first interconnect, a second interconnect disposed in alignment with the first interconnect, and an insulating layer interposed between the first interconnect and the second interconnect and having a stacked structure including a first insulating film joined to the gate insulating film and a second insulating film joined to the second protective film.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: This invention relates to a method for manufacturing a cation exchange resin, wherein the method includes the steps of: copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer to obtain a cross-linked copolymer; specifying a content of a leachable compound represented by formula (I) to be 400 ?g or less relative to 1 g of the cross-linked copolymer, wherein Z represents a hydrogen atom or an alkyl group, and l represents a natural number; and then sulfonating the cross-linked copolymer to form a sulfonylated cross-linked copolymer.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.

Abstract: A method for manufacturing an anion exchange resin, in which remaining of impurities and generation of decomposition products are suppressed and leachables are reduced, the method including the following steps (1-a) to (1-e) of: (1-a) obtaining a cross-linked copolymer by copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer; (1-b) specifying the content of a specific leachable compound to be 400 ?g or less relative to 1 g of the cross-linked copolymer; (1-c) haloalkylating the cross-linked copolymer so as to introduce 80 percent by mole or less of haloalkyl group relative to the monovinyl aromatic monomer; (1-d) removing a specific leachable compound from the haloalkylated cross-linked copolymer; and (1-e) subjecting the haloalkylated cross-linked copolymer to a reaction with an amine compound.

Abstract: The present invention provides a thin film transistor realizing improved reliability by suppressing deterioration in electric characteristics. The thin film transistor includes an oxide semiconductor film forming a channel; a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film; and a pair of electrodes formed as a source electrode and a drain electrode in contact with the oxide semiconductor film and obtained by stacking at least first and second metal layers in order from the side of the oxide semiconductor film The first metal layer is made of a metal having ionization energy equal to or higher than molybdenum (Mo), a metal having oxygen barrier property, or a nitride or a silicon nitride of the metal having oxygen barrier property.

Abstract: The present invention provides a thin film transistor including: a channel layer mainly containing a conductive oxide semiconductor; a pair of electrodes on the channel layer; and a protective film covering an exposed surface of the channel layer, exposed to the gap between the pair of electrodes. The protective film includes at least an oxygen transmission film in contact with the channel layer, and an oxygen disturbance film hardly transmitting oxygen in comparison with the oxygen transmission film, in this order from the channel layer side. A length of the oxygen disturbance film in a direction where the pair of electrodes face each other is equal to or larger than a value obtained by multiplying a width of the pair of electrodes in a direction orthogonal to the direction where the pair of electrodes face each other by 0.55.