Abstract: Provided is an etching apparatus for etching a silicon oxide film using a processing gas containing hydrogen fluoride and ammonia, including: a chamber; a gas supply unit; a water vapor supply unit; and a control unit. The chamber is configured such that a substrate having the silicon oxide film on a surface thereof can be disposed therein. The gas supply unit is configured to be capable of supplying one of the processing gas and a precursor gas of the processing gas to the chamber. The water vapor supply unit is capable of supplying water vapor to the chamber. The control unit controls the gas supply unit and the water vapor supply unit to supply the water vapor and one of the processing gas and the precursor gas to the chamber during etching processing.

Abstract: [Object] To make it difficult for components other than films to be contained in a lamination interface. [Solving Means] In a deposition apparatus, a vacuum chamber includes a partition wall which defines a plasma formation space and includes quartz. An deposition preventive plate is provided between at least a part of the partition wall and the plasma formation space and includes at least one of yttria, silicon nitride, or silicon carbide. On a support stage, a substrate including a trench or hole including a bottom portion and a side wall is capable of being disposed. A plasma generation source generates first plasma of deposition gas including silicon introduced into the plasma formation space to thereby form a semiconductor film including silicon on the bottom portion and the side wall. The plasma generation source generates second plasma of etching gas including halogen introduced into the plasma formation space to thereby selectively remove the semiconductor film formed on the side wall.

Abstract: [Object] To make it difficult for components other than films to be contained in a lamination interface. [Solving Means] In a deposition apparatus, a vacuum chamber includes a partition wall which defines a plasma formation space and includes quartz. An deposition preventive plate is provided between at least a part of the partition wall and the plasma formation space and includes at least one of yttria, silicon nitride, or silicon carbide. On a support stage, a substrate including a trench or hole including a bottom portion and a side wall is capable of being disposed. A plasma generation source generates first plasma of deposition gas including silicon introduced into the plasma formation space to thereby form a semiconductor film including silicon on the bottom portion and the side wall. The plasma generation source generates second plasma of etching gas including halogen introduced into the plasma formation space to thereby selectively remove the semiconductor film formed on the side wall.

Abstract: One embodiment of the present invention includes preparing a first conductive semiconductor substrate manufactured using the MCZ method. A second conductive base layer (12), first conductive emitter regions (13), and gate electrodes (14) are formed on a first surface of the semiconductor substrate. The semiconductor substrate is thinned by machining the second surface of the semiconductor substrate and a second conductive collector layer (15) is formed by implanting boron into the thinned second surface. A first conductive buffer layer (16) having a higher impurities concentration than the semiconductor substrate is formed by implanting hydrogen into an area inside the semiconductor substrate and adjacent to the collector layer (15).

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.

Abstract: An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.

Abstract: An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.

Abstract: An ion implantation apparatus includes an ion emission unit configured to emit ions to a plurality of regions of at least one substrate under different conditions. A substrate holding unit is configured to hold the substrate and change a position of the at least one substrate relative to the ions emitted from the ion emission unit. A computation unit is configured to prepare a correcting process condition for each of the regions based on correction information beforehand input for each of the regions. The correcting process condition is acquired by correcting a standard process condition used for ion emission. A controller controls the ion emission unit and the substrate holding unit to emit the ions to each of the regions under the correcting process condition.

Abstract: An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.