Abstract: This is a processing cell of an automatic machining system having a small, lightweight and simple structure, easy to determine or change the number of process, easy in design, and low in apparatus cost. A processing cell (A) has a unit structure comprising a conveying device (10) forming a part of a work conveying route (1), a fine boring machine (5a) or honing machine (5b), (5c) as a single machine tool, and a control unit for linking them mutually and controlling, and these cells are installed, being free to increase or decrease in number, in the machining section of automatic machining system such as automatic honing system.

Abstract: A card comprises a card body; a running-out part provided at the card body; means for forming the running-out part, capable of jumping the running-out part out from the card body in three dimensions; an predetermined printing part provided at the card body, using in common; and a printing column provided at the card part except for a part of means for forming the running-out part so that it can produce a three-dimensional effect and make people fun and happy, and it is easy to print for any order of applicant, and everyone can use efficiently.

Abstract: A processing cell of automatic machining system configured in that it is easy to decide or change the number of steps and to design, and to reduce the installation cost. The control unit of the processing cell comprises an operation data storing means for storing every position necessary data for operation at each position of the processing cell installed in the machining section of the automatic machining system, and a position designating means for designating the after-installation position. The control unit reads necessary data for operation out of the operation data storing means in accordance with the position designated by the position designating means. Thus, the operation of each cell can be switched in accordance with the position, and the processing cells can be easily changed in position and adjusted in quantity.

Abstract: This is a processing cell of an automatic machining system having a small, lightweight and simple structure, easy to determine or change the number of process, easy in design, and low in apparatus cost. A processing cell (A) has a unit structure comprising a conveying device (10) forming a part of a work conveying route (1), a fine boring machine (5a) or honing machine (5b), (5c) as a single machine tool, and a control unit for linking them mutually and controlling, and these cells are installed, being free to increase or decrease in number, in the machining section of automatic machining system such as automatic honing system.

Abstract: A robot arm and an apparatus for transferring an article. The robot arm includes a movable hand for holding the article. A first arm has a proximal end that rotatably supports a drive pulley and a distal end that rotatably supports a driven pulley. The pulleys are connected to each other by a belt. A second arm and a third arm each have a proximal end and a distal end. The proximal ends of the second and third arms are pivotally supported by the driven pulley. The distal ends of the second and third arms are pivotally coupled to the hand. The driven pulley, the second arm, and the third arm cooperate with the hand to define a parallel linkage mechanism. A first motor pivots the first arm about its proximal end. A second motor rotates the drive pulley. A pivoting mechanism pivots the second arm about its proximal end relative to the first arm in correspondence with the pivoting of the first arm.

Abstract: In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device Is arranged to the gate electrode. This the of device may be constructed as a CMOS type device.In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

Abstract: In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region, and a drain region may also be arranged on the same plane, and the latter MOS device is arranged adjacent to the gate electrode. This type of device may be constructed as a CMOS type device. In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel, and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

Abstract: In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device is arranged to the gate electrode. This type of device may be constructed as a CMOS type device.In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

Abstract: An assembly apparatus for assembling a sub-assembly of a swash plate type fluidic apparatus includes a holder adapted to hold an end of a driving shaft, a horizontal rail, a curved rail connected with the horizontal rail, a plurality of carriers adapted to seat pistons and a pair of hemispherical shoes as well and to move on the horizontal rail and the curved rail, transporting means adapted to move the carriers on the horizontal rail and the curved rail, a first orienting member adapted to positioned the shoes in spherical seats of the pistons with its surfaces, and a second orienting member disposed connectably with the first orienting member and including surfaces which incline gradually to an inclination angle of a swash plate. The carriers are moved continuously on the horizontal rail and the curved rail by the transporting means.

Abstract: In a CMOS semiconductor device, a first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on a first plane. A second MOS type device, comprising a second source region, a second channel region and a second drain region is arranged on a second plane above the first MOS type device, with an insulator layer interposed between the two devices. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

Abstract: This invention relates to a production process of formed activated coke for SOx and NOx removal which is employed in treatment systems for various flue gases and the like.The formed activated coke for SOx and NOx removal obtained in accordance with the process of this invention has excellent pressure resistance, abrasion resistance and impact strength and also superb SOx- and NOx-removing ability, so that the coke is suitable for use in moving-bed, SOx and NOx- removing systems.The formed activated coke for SOx and NOx removal can of course show excellent SOx- and NOx-removing effects when employed in conventional SOx- and NOx-removing processes and, moreover, owing to its characteristic high NOx-removing ability, is suited for the removal of NOx from low-SOx flue gas of a fluidized-bed combustion boiler or cogeneration power plant.According to the process of this invention, dried, formed activated coke prepared from coal as a raw material is reacted with SO.sub.3 gas at 100.degree.-300.degree. C.

Abstract: A control change system for a backhoe in a construction vehicle, comprising a plurality of pilot valves for generating a pilot pressure corresponding to operations of a first and a second control levers, respectively, and a hydraulic switching unit for relaying the pilot pressure from the pilot valves and supplying the pilot pressure to a plurality of control valves. This switching unit includes a plurality of slidable spools for supplying the pilot pressure from the pilot valves selectively to the control valves. The control system further includes a first and a second switching members for selectively sliding the plurality of slidable spools. The first switching member is operable to select the swing cylinder or the hydraulic motor to be controlled by a shift in one direction of the first control lever. The second switching member is operable to switch interlocks between the first and second control levers and a boom cylinder and an arm cylinder.

Abstract: A control change system for a hydraulic working vehicle having a plurality of hydraulic actuators operable by control levers each shiftable to a plurality of control positions. This system includes a plurality of pilot-operated control valves for controlling pressure oil supply to the hydraulic actuators, respectively, pilot pressure generating valves for generating a pilot pressure in accordance with the control positions of the control levers, and a pilot pressure switching unit for receiving the pilot pressure from the pilot pressure generating valves and outputting the pilot pressure selectively to the control valves. The pilot pressure switching unit includes a plurality of spools slidable to change communicating passages between a pilot pressure input section and a pilot pressure output section of the switching unit.

Abstract: Disclosed is a method of fabricating a polycidegate in semiconductor device which has a step of forming a conductor film of polysilicon on a substrate, a step of forming an ion implanted layer by implanting nitrogen ions into the polysilicon conductor film, and a step of forming a low resistance conductor film of titanium on the non-monocyrstalline conductor film. When a field effect transistor is formed by this method, using titanium nitride and/or TiSi.sub.2 alloy of the polysilicon conductor and low resistance conductor of titanium by heat treatment as a gate electrode material, the thickness of the alloyed layer is uniform, and breakdown of the gate insulating film due to local diffusion of low resistance conductor is not induced. In other embodiments, oxygen ions and silicon ions are also employed to form thin layers of tunnel oxide and amorphous silicon, respectively.

Abstract: Method for measuring power supply current, e.g., standby current of a random access memory in which, before starting measurement of the power supply current, data is read-out from memory cell of the random access memory and opposite data is written in the memory cell so that the random access memory enters into an unstabilized state. By use of this method, the measurement of the maximum power supply current can be conducted precisely.

Abstract: A valve control structure for a working vehicle comprising a control lever rockable crosswise, a first input rod pushed and pulled by rocking movements in a first direction of the control lever, a second input rod pushed and pulled by rocking movements in a second direction of the control lever, a first output rod connected to a first valve, a second output rod connected to a second valve, and an interlock switching device including bellcranks provided between the input rods and the output rods. The interlock switching device is operable to switch interlocking relationship between the input and output rods through the bellcranks. In one interlocking relationship, the first valve is controlled by rocking movements in the first direction of the control lever and the second valve by rocking movements in the second direction of the control lever.

Abstract: A CMOS integrated circuit includes a P-channel type MOS transistor which is formed on an N-type silicon substrate, an N-channel type MOS transistor which is formed on a P well formed in the substrate, and parasitic bipolar transistors which are electrically connected to each other to form a kind of thyristor structure. A power supply voltage is applied to a source electrode of the P-channel type MOS transistor through a part of the substrate which presents a resistance. The resistance is electrically connected to the parasitic bipolar transistor of the thyristor structure to thereby prevent the occurrence of a latch-up phenomenon in which a large current continuously flows through the parasitic bipolar transistors and may destroy the CMOS integrated circuit. Because of the prevention of the latch-up phenomenon, the CMOS integrated circuit is always maintained in good condition.

Abstract: There is disposed a valve control structure for a working vehicle for operating two control valves by means of a control lever rockable crosswise, wherein one of the valves is operable by a rocking movement in a first direction of the control lever and the other valve is operable by a rocking movement in a second direction of the control lever. A connection switching mechanism is provided between the control lever and the valves to switch interlocking relations of the two control valves with respect to the rocking directions of control lever. This switching is readily carried out by operating a single switch lever permits the operator to use the vehicle after selecting the interlocking relations to which he is accustomed.

Abstract: There is disclosed an earth moving vehicle having a pressure oil tank and a battery arranged longitudinally along one lateral side of a swivel deck. A driver's cabin of the vehicle includes covers for covering the battery and the pressure oil tank. The covers have top surfaces at a certain height to provide a large space for the driver.