Abstract: This invention relates to crystals of compounds of formula (I), wherein TBS represents t-butyldimethylsilyl, and Ph represents phenyl, or its salt or solvate. Compounds of formula (I) are synthesis intermediates of 2-substituted-1?-methyl carbapenem compounds useful as antimicrobial agents. The crystals of the present invention have excellent handleability and can realize the production of carbapenem compounds having excellent antimicrobial actibity in a simpler manner with improved yield and purity.

Abstract: [Objective] An objective of the present invention is to provide compounds that are effective against various resistant bacteria which cause current clinical problems, for example, pneumococci including penicillin resistant Streptococcus pneumoneae (PRSP), Haemophilus influenzae including bata-lactamase-nonproducing ampicillin-resistant Haemophilus influenzae (BLNAR), and Moraxella (Branhamella) catarrhalis.

Abstract: A solid electrolytic capacitor including a capacitor element having an anode body partly provided with a cathode layer, an anode-side and a cathode-side lead frame attached to a lower surface of the capacitor element, and a housing covering the lead frames and the capacitor element except lower surfaces of the lead frames. Both of the lead frames are exposed on the bottom face of the housing. The anode-side lead frame extending longitudinally of the capacitor is provided in an outer end portion thereof with at least two strips which separate each other. Outer end portions of the strips are exposed on the outer end face of the housing. A concave space is formed between the strips and is filled with resin forming the housing.

Abstract: A solid electrolytic capacitor including a capacitor element having an anode body partly provided with a cathode layer, an anode-side and a cathode-side lead frame attached to a lower surface of the capacitor element, and a housing covering the lead frames and the capacitor element except lower surfaces of the lead frames. Both of the lead frames are exposed on the bottom face of the housing. The anode-side lead frame extending longitudinally of the capacitor is provided in an outer end portion thereof with at least two strips which separate each other. Outer end portions of the strips are exposed on the outer end face of the housing. A concave space is formed between the strips and is filled with resin forming the housing.

Abstract: A solid electrolytic capacitor including a capacitor element having an anode body partly provided with a cathode layer, an anode-side and a cathode-side lead frame attached to a lower surface of the capacitor element, and a housing covering the lead frames and the capacitor element except lower surfaces of the lead frames. The housing covers an outer end face of each of the lead frames, the outer end face of each lead frame being provided with a filling portion filled with a resin forming the housing.

Abstract: An objective of the present invention is to provide carbapenem derivatives which have strong antibiotic activity also against MRSA, PRSP, Influenzavirus, and ?-lactamase producing bacteria and are stable to DHP-1. The carbapenem derivatives according to the present invention are compounds represented by formulae (I) and (II) or pharmaceutically acceptable salts thereof: wherein R1 represents H or methyl, R2 and R3 each independently represent H; halogen; substituted or unsubstituted alkyl; cycloalkyl; substituted or unsubstituted alkylcarbonyl; carbamoyl; substituted or unsubstituted aryl; substituted or unsubstituted alkylthio; morpholinyl; alkylsulfonyl; or formyl, n is 0 (zero) to 4, and Hy represents a substituted or unsubstituted monocyclic or bicyclic heterocyclic group.

Abstract: A solid electrolytic capacitor comprises a capacitor element having an anode body partly provided with a cathode layer, an anode-side and a cathode-side lead frame attached to a lower surface of the capacitor element, and a housing covering the lead frames and the capacitor element except lower surfaces of the lead frames. The housing covers an outer end face of each of the lead frames, the outer end face of each lead frame being provided with a filling portion filled with a resin forming the housing.

Abstract: An Si crystal film functioning as a channel region is formed on an SiGe crystal film substrate. Furthermore, an SiGe crystal film functioning as a channel region is formed on the Si crystal film. In addition, on the opposite sides of the SiGe crystal film and the Si crystal film, an Si crystal film functioning as a source/drain region is formed. Moreover, a gate electrode is formed on the SiGe crystal film with a gate insulator film interposed. In accordance with the configuration described above, SiGe crystal film prevents the native oxidation of the Si crystal film. As a result, it is possible to obtain a semiconductor device that solves a problem caused by decrease in a conductivity in the Si crystal film resulting from the native oxidation of a surface of the Si crystal film.

Abstract: An objective of the present invention is to provide carbapenem derivatives which have potent antibiotic activity against MRSA, PRSP, Influenzavirus, and &bgr;-lactamase-producing bacteria and are stable against DHP-1. The compounds according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts thereof: wherein R1 represents H or methyl; R2 and R3 each independently represent H, halogen, lower alkyl or the like; R4 represents optionally substituted lower alkylthio or the like; and R5 represents optionally substituted lower alkyl or the like.

Abstract: A pointed shape may be present on the top end of the capacitor bottom (lower) electrode of a cylindrical capacitor. To cover this pointed end, a two-layer dielectric film of a capacitor dielectric film and another capacitor dielectric film is formed. As a result, while the capacitor bottom electrode has a pointed shape on its top end, the dielectric film covering the portion having a pointed shape has a greater thickness than the dielectric film covering the other parts of the vertical portion. Thus, even if the portion with a pointed shape on the capacitor bottom electrode has a concentration of electric field, the dielectric film exhibits a sufficient insulation performance to prevent leakage current. In this way, a semiconductor device is provided with an improved property of a capacitor dielectric film by the reduction of the risk of generating a leakage current in the capacitor dielectric film.

Abstract: A source region (2) and a drain region (3) both containing n-type impurities are formed on a p-type Si semiconductor substrate (1) containing p-type impurities. On an active region of the surface of the p-type Si semiconductor substrate (1) between the source region (2) and the drain region (3), a gate insulating film (4) is formed. An n-type SiGe mixed crystal film (5) containing n-type impurities is formed on the gate insulating film (4) and a p-type SiGe mixed crystal film (6) containing p-type impurities is formed on the n-type SiGe mixed crystal film (5). A semiconductor device including such a transistor can further inhibit an increase in leakage current flowing between the gate electrode and the drain through the gate insulating film.

Abstract: A source region (2) and a drain region (3) both containing n-type impurities are formed on a p-type Si semiconductor substrate (1) containing p-type impurities. On an active region of the surface of the p-type Si semiconductor substrate (1) between the source region (2) and the drain region (3), a gate insulating film (4) is formed. An n-type SiGe mixed crystal film (5) containing n-type impurities is formed on the gate insulating film (4) and a p-type SiGe mixed crystal film (6) containing p-type impurities is formed on the n-type SiGe mixed crystal film (5). A semiconductor device including such a transistor can further inhibit an increase in leakage current flowing between the gate electrode and the drain through the gate insulating film.

Abstract: A semiconductor device with a capacitor having a charge retaining capability improved by preventing generation of a leakage current in a capacitor dielectric film, and a manufacturing method of the same are provided. An indium oxide film is formed to continuously cover the upper surfaces of a tungsten film and an interlayer oxide film. A tantalum oxide film is formed to continuously cover the surface of the indium oxide film and a portion of the upper surface of the interlayer oxide film. Another indium oxide film is formed to cover the upper surface of the tantalum oxide film.

Abstract: A semiconductor device having a capacitor according to the present invention has a storage node and a cell plate opposed to each other through a capacitor dielectric layer, and at least either the storage node or the cell plate is formed to have a mixed crystal layer of SiGe containing a p-type impurity. Thus, a semiconductor device having a capacitor capable of effectively preventing reduction of the capacitance can be obtained.

Abstract: An objective of the present invention is to provide carbapenem derivatives which have strong antibiotic activity also against MRSA, PRSP, Influenzavirus, and &bgr;-lactamase producing bacteria and are stable to DHP-1.

Abstract: An Si crystal film functioning as a channel region is formed on an SiGe crystal film substrate. Furthermore, an SiGe crystal film functioning as a channel region is formed on the Si crystal film. In addition, on the opposite sides of the SiGe crystal film and the Si crystal film, an Si crystal film functioning as a source/drain region is formed. Moreover, a gate electrode is formed on the SiGe crystal film with a gate insulator film interposed. In accordance with the configuration described above, SiGe crystal film prevents the native oxidation of the Si crystal film. As a result, it is possible to obtain a semiconductor device that solves a problem caused by decrease in a conductivity in the Si crystal film resulting from the native oxidation of a surface of the Si crystal film.

Abstract: An objective of the present invention is to provide carbapenem derivatives which have potent antibiotic activity against MRSA, PRSP, Influenzavirus, and &bgr;-lactamase-producing bacteria and are stable against DHP-1. The compounds according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts thereof: wherein R1 represents H or methyl; R2 and R3 represent H, a halogen atom, alkyl or the like; and R4 represents substituted lower alkylthio or the like.

Abstract: Disclosed is a novel carbapenem derivative having a substituted imidazo[5,1-b]thiazole group at the 2-position on the carbapenem ring have high anti microbial activities against &bgr;-lactamase producing bacteria, MRSA, resistant-Pseudomonas aeruginosa, PRSP, enterococci, and influenza, and high stabilities to DHP-1.

Abstract: Disclosed is a novel carbapenem derivative having a substituted imidazo[5,1-b]thiazole group at the 2-position on the, carbapenem ring have high anti-microbial activities against &bgr;-lactamase producing bacteria, MRSA, resistant-Pseudomonas aeruginosa, PRSP, enterococci, and influenza, and high stabilities to DHP-1.

Abstract: A semiconductor device having a capacitor according to the present invention has a storage node and a cell plate opposed to each other through a capacitor dielectric layer, and at least either the storage node or the cell plate is formed to have a mixed crystal layer of SiGe containing a p-type impurity. Thus, a semiconductor device having a capacitor capable of effectively preventing reduction of the capacitance can be obtained.