Abstract: A chip antenna includes a substrate, a plurality of helical conductors provided on the substrate, and a pair of terminals provided on the substrate. One of the plurality of helical conductors is connected electrically to one of the terminals, and another one of the helical conductors is connected electrically to the other terminal. Thus, the antenna is of a small size, yet is a single unit which alone is capable of transmitting and receiving electromagnetic waves of a plurality of frequencies.

Abstract: An electronic whiteboard capable of being drawn by using marker pens of several colors and one penholder, and a penholder for use in such an electronic whiteboard are disclosed. In a penholder for mounting marker pens, an infrared light emitting unit emits infrared light containing color information of the marker pen, an ultrasonic wave emitting unit emits a the ultrasonic wave, and color information changeover means changes over color information depending on the color of marker pen. The electronic whiteboard main body receives the infrared light and ultrasonic wave emitted from the penholder, and issues information about a position of the penholder depending on the reception timing of the infrared light and ultrasonic wave.

Abstract: A filter includes a substrate with a relative dielectric constant of 200 or less and a thickness of 0.1 mm or more. A first electrode is disposed on at least one surface of the substrate, a group of second electrodes is disposed on at least the other surface of the substrate. Each of the second electrodes is not in contact with each other and is not in contact with the first electrode. The filter also includes a chip type inductance element. The chip type inductance element has an inductance ranging from 0.1 nH to 30 nH and has dimensions of L1 in length, L2 in width and L3 in height, which satisfy the following conditions; 0.3 mm<L1<2.1 mm 0.1 mm<L2<1.1 mm 0.1 mm<L3<1.1 mm.

Abstract: A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.

Abstract: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

Abstract: The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element selected from the group consisting of Ba and Sr, and an upper electrode provided on the dielectric film, wherein the dielectric film includes a layer which contacts the upper electrode. In case the dielectric film which has a thickness of at least 5 nm and exhibits a first-order differential spectrum measured by means of Auger electron spectroscopy, and the in the first-order differential spectrum, a ratio A/B is at most 0.3, where A is the absolute value A of a difference between a third peak appearing near 420 eV and a fourth peak appearing at a higher energy level and near the third peak, and B is the absolute value B of a difference between a first peak appearing near 410 eV and a third peak appearing at a lower energy level and near the first level.

Abstract: Electronic whiteboard system comprises projected position information setting means for setting projected position information of a PC screen image projected onto the screen of the electronic whiteboard, projected position information storage section for storing projected position information, desktop operation/drawing means for enabling operation on the PC screen image projected on the screen by using an electronic pin as well as storing the locus of free lines drawn on the PC screen image in correspondence with the base image of the PC screen, document information storage section for storing a pair of base image and free lines on a per page basis and storing a plurality of pages as document information, and document information regeneration means for displaying a base image on the window of a computer unit then free lines over the base image in the order the lines were drawn based on the document information stored in the document information storage section.

Abstract: A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.

Abstract: Presented is an etching method capable of easily etching an oxide containing an alkaline-earth metal. One method is to etch the oxide by using an etching gas containing a halogen gas except for fluorine, an interhalogen compound consisting of only a halogen element except for fluorine, or a halogen hydride consisting of a halogen element except for fluorine and hydrogen. Particularly chlorides, bromides, and iodides of alkaline-earth metals have relatively high vapor pressures, so a thin film containing an alkaline-earth metal can be etched by using chlorine gas, bromine gas, or iodine gas. When a halogen gas containing fluorine is used, damages to SiO2 portions used in a film formation apparatus are prevented by coating these SiO2 portions with a fluoride of an alkaline-earth metal.

Abstract: Presented is an etching method capable of easily etching an oxide containing an alkaline-earth metal. One method is to etch the oxide by using an etching gas containing a halogen gas except for fluorine, an interhalogen compound consisting of only a halogen element except for fluorine, or a halogen hydride consisting of a halogen element except for fluorine and hydrogen. Particularly chlorides, bromides, and iodides of alkaline-earth metals have relatively high vapor pressures, so a thin film containing an alkaline-earth metal can be etched by using chlorine gas, bromine gas, or iodine gas. When a halogen gas containing fluorine is used, damages to SiO2 portions used in a film formation apparatus are prevented by coating these SiO2 portions with a fluoride of an alkaline-earth metal.

Abstract: A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode formed on the capacitor insulating film.

Abstract: A circuit component comprising a circuit board and a terminal for mounting the circuit board on a second circuit board. A length of the circuit board is 10 mm-80 mm, a difference in a coefficient of thermal expansion between the circuit board and the second circuit board is or 0.2×10−5/° C. greater. The terminal is made of an elastic material, and comprised of a first connection section, a second connection section and an elastic section disposed between the first and second connection sections. and the terminal separates the circuit board from the second circuit board by 0.3 mm-5 mm. In the circuit components of the present invention, deterioration in the conduction between the circuit board and the second circuit board due to heat cycles can be prevented. Thus, a circuit component having stable operating characteristics for a long period of time is obtained.

Abstract: An electronic whiteboard capable of being drawn by using marker pens of several colors and one penholder, and a penholder for use in such an electronic whiteboard are disclosed. In a penholder for mounting marker pens, an infrared light emitting unit emits infrared light containing color information of the marker pen, an ultrasonic wave emitting unit emits a the ultrasonic wave, and color information changeover means changes over color information depending on the color of marker pen. The electronic whiteboard main body receives the infrared light and ultrasonic wave emitted from the penholder, and issues information about a position of the penholder depending on the reception timing of the infrared light and ultrasonic wave.

Abstract: A filter of the present invention comprises a substrate with a relative dielectric constant of 200 or less and thickness of 0.1 mm or more, a first electrode disposed on at least one surface of the substrate, a group of second electrode disposed on at least the other surface of the substrate, each of the group of second electrodes being not in contact with each other and also being not in contact with the first electrode, and a chip type inductance element. The chip type inductance element has an inductance ranging from 0.1 nH to 30 nH and has dimensions of L1 in length, L2 in width and L3 in height, which satisfy the following conditions.

Abstract: A semiconductor device with a charge holding capacitor comprises a lower electrode connected via a plug to one of the source and drain of an MIS transistor, a capacitor insulating film formed the lower electrode, an upper electrode formed on the capacitor insulating film. The lower electrode includes a first constituting portion that is embedded in a hole in which the plug has been embedded and so formed that it self-aligns with the plug and a second constituting portion which is formed on the first constituting portion and on regions outside the fist constituting portion and whose cross section is larger than that of the first constituting portion. The first constituting portion and the second constituting portion are formed integrally by a continues film.

Abstract: Disclosed is a semiconductor device, comprising a semiconductor substrate, a cell transistor formed in the semiconductor substrate, an interlayer dielectric film in which is formed a contact hole communicating with a part of the cell transistor, a contact plug buried in the contact hole formed in the interlayer dielectric film, a capacitor lower electrode formed of a ruthenium/tantalum laminate film consisting of a tantalum film and a ruthenium film formed on the tantalum film, the lower electrode being formed on interlayer dielectric film and connected to the contact plug, a capacitor dielectric film formed on the ruthenium film included in the capacitor lower electrode and consisting of a metal oxide, and a capacitor upper electrode formed on the capacitor dielectric film, the ruthenium film exhibiting (00n) dominant orientation, where n denotes a positive integer.

Abstract: An SrRuO3 film as the lower electrode and upper electrode of a capacitor is formed by CVD using a gas mixture of Sr(THD)2 and Ru(THD)3 as source gases. A BaxSr1-xRuO3 film is used as a capacitor insulating film.

Abstract: A semiconductor device comprises a first lower capacitor electrode composed of a first conductive film, a second lower capacitor electrode composed of a second conductive film which covers at least the side face of the first lower capacitor electrode at its top face, a capacitor insulating film provided on the second lower capacitor electrode, and an upper capacitor electrode provided on the capacitor insulating film, wherein film stress in the first conductive film is lower than that in the second conductive film and the volume of the first conductive film is larger than that of the second conductive film. The above-described structure reduces leakage current in the capacitor.

Abstract: A solid raw material such as a powdery material is pressure-molded into a disk form to form a molded solid body. The molded solid body is heated to produce a source gas. The source gas is used in a film formation step in accordance with a chemical vapor deposition method. When the molded solid body is used, the source gas can be produced in an amount larger than the case where the powdery raw material is heated to obtain the source gas. In this case, an amount of carbon introduced into the film can be reduced compared to the case of using a liquefied material obtained by dissolving the raw material in a solvent. Furthermore, it is possible for a user to easily replace the raw material with a new one by using the molded solid body.

Abstract: An electronic blackboard device capable of performing color printing. Data read by an image sensor is converted to digital data by an A/D converter and provided via a shading correcting circuit and a converter to a printer control circuit, which causes a color printer to print the appropriate data in a color corresponding to a marker.