Patents by Inventor Kazuhiro Endo
Kazuhiro Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240079177Abstract: A multilayer coil component includes an element body, a plurality of coil conductors, a first resistive layer, and a second resistive layer. The plurality of coil conductors are disposed in the element body and electrically connected to each other. The plurality of coil conductors include a first coil conductor and a second coil conductor adjacent to each other. The first resistive layer and the second resistive layer oppose each other between the first coil conductor and the second coil conductor. The first resistive layer is in contact with the first coil conductor.Type: ApplicationFiled: July 26, 2023Publication date: March 7, 2024Applicant: TDK CORPORATIONInventors: Yusuke NAGAI, Kazuhiro EBINA, Takahiro SATO, Masaki TAKAHASHI, Takashi ENDO, Yuya ISHIMA, Kosuke ITO, Takuya MIYASHITA
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Publication number: 20210237368Abstract: A production method for a joined object is a method for producing a joined object by joining two objects together. The method includes: irradiating joining surfaces of the respective two objects with plasma; and bonding the joining surfaces irradiated with plasma, at a temperature lower than a melting point of a substance included in the objects.Type: ApplicationFiled: April 22, 2019Publication date: August 5, 2021Applicant: Kanazawa Institute of TechnologyInventor: Kazuhiro ENDO
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Publication number: 20170182519Abstract: A method for manufacturing a regenerated product includes a selection step for selecting a recovered regeneration object based on a first evaluation standard indicating a state of a surface of the regeneration object, a rust-removing step for performing a rust-removing treatment to the regeneration object selected by the selection step, and a judgement step for judging whether to terminate the rust-removing treatment in the rust-removing step based on a second evaluation standard indicating the state of the surface of the regeneration object.Type: ApplicationFiled: March 15, 2017Publication date: June 29, 2017Applicant: Tokyo Electric Power Company Holdings, IncorporatedInventors: Noboru KOBAYASHI, Tamotsu OGAWA, Chikara MOROOKA, Yuki NOMOTO, Kazuhiro ENDO, Kenji FUKASHIRO, Motoyoshi SUZUKI
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Patent number: 7981840Abstract: A well-crystallized a-axis (or b-axis) oriented Bi-based oxide superconductor thin film is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. In manufacturing a well-crystallized a-axis oriented Bi-based oxide superconductor thin film, a (110) plane of a single crystal substrate of LaSrAlO4 or a vicinal cut substrate of a single crystal of LaSrAlO4 is used, on which an a-axis oriented Bi-2223 or Bi-2201 thin film is heteroepitaxially grown at a low film forming temperature T1, then homoepitaxially grown on the grown film at a high film forming temperature T2 (double temperature growth method). Although it is difficult to grow an a-axis oriented film directly on a substrate at a high temperature T2, an a-axis oriented Bi-2223 or Bi-2201 thin film is formed on the base by previously forming the base film at low deposition temperature.Type: GrantFiled: February 28, 2006Date of Patent: July 19, 2011Assignee: National Institute of Advanced Industrial Science and TechnologyInventor: Kazuhiro Endo
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Publication number: 20090197770Abstract: A Bi-based oxide superconductor thin film whose c-axis is oriented parallel to the substrate and whose a-axis (or b-axis) is oriented perpendicular to the substrate, is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. The method of manufacturing an a-axis oriented Bi-based oxide superconductor thin film, involves an epitaxial growth process using an LaSrAlO4 single crystal substrate of a (110) plane or a LaSrGaO4 single crystal substrate of a (110) plane, for which the lattice constant matches well with a (100) plane of a Bi-2223 oxide superconductor. By this method, rather than the normally easily obtained Bi-2212, an a-axis oriented film of Bi-2223 showing an extremely high superconductive transition temperature even for a Bi-based oxide superconductor can be selectively manufactured.Type: ApplicationFiled: March 9, 2009Publication date: August 6, 2009Applicant: National Institute of Advanced Industrial Science and TechnologyInventor: Kazuhiro Endo
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Patent number: 7507691Abstract: A Bi-based oxide superconductor thin film whose c-axis is oriented parallel to the substrate and whose a-axis (or b-axis) is oriented perpendicular to the substrate, is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. The method of manufacturing an a-axis oriented Bi-based oxide superconductor thin film, involves an epitaxial growth process using an LaSrAlO4 single crystal substrate of a (110) plane or a LaSrGaO4 single crystal substrate of a (110) plane, for which the lattice constant matches well with a (100) plane of a Bi-2223 oxide superconductor. By this method, rather than the normally easily obtained Bi-2212, an a-axis oriented film of Bi-2223 showing an extremely high superconductive transition temperature even for a Bi-based oxide superconductor can be selectively manufactured.Type: GrantFiled: September 16, 2005Date of Patent: March 24, 2009Assignee: National Institute of Advanced Industrial Science and TechnologyInventor: Kazuhiro Endo
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Publication number: 20060205602Abstract: A well-crystallized a-axis (or b-axis) oriented Bi-based oxide superconductor thin film is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. In manufacturing a well-crystallized a-axis oriented Bi-based oxide superconductor thin film, a (110) plane of a single crystal substrate of LaSrAlO4 or a vicinal cut substrate of a single crystal of LaSrAlO4 is used, on which an a-axis oriented Bi-2223 or Bi-2201 thin film is heteroepitaxially grown at a low film forming temperature T1, then homoepitaxially grown on the grown film at a high film forming temperature T2 (double temperature growth method). Although it is difficult to grow an a-axis oriented film directly on a substrate at a high temperature T2, an a-axis oriented Bi-2223 or Bi-2201 thin film is formed on the base by previously forming the base film at low deposition temperature.Type: ApplicationFiled: February 28, 2006Publication date: September 14, 2006Inventor: Kazuhiro Endo
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Publication number: 20060084578Abstract: A Bi-based oxide superconductor thin film whose c-axis is oriented parallel to the substrate and whose a-axis (or b-axis) is oriented perpendicular to the substrate, is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. The method of manufacturing an a-axis oriented Bi-based oxide superconductor thin film, involves an epitaxial growth process using an LaSrAlO4 single crystal substrate of a (110) plane or a LaSrGaO4 single crystal substrate of a (110) plane, for which the lattice constant matches well with a (100) plane of a Bi-2223 oxide superconductor. By this method, rather than the normally easily obtained Bi-2212, an a-axis oriented film of Bi-2223 showing an extremely high superconductive transition temperature even for a Bi-based oxide superconductor can be selectively manufactured.Type: ApplicationFiled: September 16, 2005Publication date: April 20, 2006Inventor: Kazuhiro Endo
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Publication number: 20020128442Abstract: This application provides human proteins STAM2a and STAM2b respectively containing the amino amid sequences of SEQ ID No. 1 and 2 which are novel signal transducers interacting with a cytokine signal transducer AMSH. This application also provides human gene encoding these proteins, their cDNAs respectively containing the nucleotide sequences of SEQ ID Nos. 3 and 4, and antibodies against STAM2a and STAM2b.Type: ApplicationFiled: November 8, 2001Publication date: September 12, 2002Inventors: Kazuo Sugamura, Kazuhiro Endo
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Publication number: 20020115203Abstract: This application provides human proteins STAM2a and STAM2b respectively containing the amino amid sequences of SEQ ID No. 1 and 2 which are novel signal transducers interacting with a cytokine signal transducer AMSH. This application also provides human gene encoding these proteins, their cDNAs respectively containing the nucleotide sequences of SEQ ID Nos. 3 and 4, and antibodies against STAM2a and STAM2b.Type: ApplicationFiled: August 31, 2001Publication date: August 22, 2002Inventors: Kazuo Sugamura, Kazuhiro Endo
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Patent number: 4362409Abstract: An automatic sheet feeding system of a printing apparatus comprising a platen, a printing head, a sheet ejecting stacker and a sheet feeding stacker. The platen remains stationary when the leading edge of a sheet fed by the sheet feeding roller has abutted against the platen, whereby the tilting position of the sheet can be corrected. The system comprises further sheet leading edge detecting means disposed at the inlet of the sheet ejecting passage near the platen. When the detecting means detects the leading edge of a sheet, the platen can be rotated in the reverse direction through a predetermined angle for setting the printing initiating position on a sheet at a predetermined distance from the leading edge of the sheet.Type: GrantFiled: July 28, 1980Date of Patent: December 7, 1982Assignees: Ricoh Co., Ltd., Nipponseimitsu Kogyo Kabushiki KaishaInventors: Kazuhiro Endo, Toshiyuki Soejima, Masahiro Fujihara