Patents by Inventor Kazuhiro Hono

Kazuhiro Hono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130040167
    Abstract: It is aimed to provide a perpendicular magnetic recording medium capable of dealing with an ultra-higher recording density than before and its manufacturing method. The present invention concerns a perpendicular magnetic recording medium including at least a seed layer made of noncrystalline ceramic, a crystalline orientation control layer and a magnetic layer made of a material mainly containing a FePt alloy in this order on a substrate. This perpendicular magnetic recording medium is suitably manufactured by forming at least the seed layer, the orientation control layer and the magnetic layer made of the material mainly containing the FePt alloy in this order on the substrate by sputtering, wherein the magnetic layer is formed at a predetermined temperature of 500° C. or less.
    Type: Application
    Filed: January 12, 2011
    Publication date: February 14, 2013
    Applicants: WD MEDIA (SINGAPORE) PTE. LTD., NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Perumal Alagarsamy, Yukiko Takahashi, Kazuhiro Hono, Tomoko Seki
  • Publication number: 20120091548
    Abstract: Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0?x?1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.
    Type: Application
    Filed: April 15, 2010
    Publication date: April 19, 2012
    Inventors: Hiroaki Sukegawa, Koichiro Inomata, Rong Shan, Masaya Kodzuka, Kazuhiro Hono, Takao Furubayashi, Wenhong Wang
  • Patent number: 7976775
    Abstract: Disclosed is a binary aluminum alloy powder sintered material which comprises aluminum and iron, which has a completely crystalline microstructure comprising an aluminum matrix and an ?-Al phase and at least any one phase of an Al6Fe phase or an Al13Fe4 phase mixed in the aluminum matrix as nanocrystalline phases, and which has an extremely high strength and a well-balanced high ductility, though being free from any rare earth element.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: July 12, 2011
    Assignee: National Institute for Materials Science
    Inventors: Taisuke Sasaki, Kazuhiro Hono, Toshiji Mukai
  • Patent number: 7871476
    Abstract: A magnesium alloy exhibiting high strength and high ductility, characterized in that it comprises 0.03 to 0.54 atomic % of certain solute atoms belonging to 2 Group, 3 Group or Lanthanoids of the Periodic Table and having an atomic radius larger than that of magnesium and the balanced amount of magnesium, and has a fine crystal grain structure wherein solute atoms having an average crystal grain diameter of 1.5 ?m or less and being unevenly present in the vicinity of crystal grain boundaries at a concentration being 1.5 to 10 times that within crystal grains, wherein an atom selected from the group consisting of Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu can be used as the above solute atom; and a method for producing the magnesium alloy. The above magnesium alloy is novel and achieves high strength and high ductility at the same time.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: January 18, 2011
    Assignee: National Institute for Materials Science
    Inventors: Toshiji Mukai, Kazuhiro Hono, Hidetoshi Somekawa, Tomoyuki Honma
  • Publication number: 20100278682
    Abstract: Disclosed is a binary aluminum alloy powder sintered material which comprises aluminum and iron, which has a completely crystalline microstructure comprising an aluminum matrix and an ?-Al phase and at least any one phase of an Al6Fe phase or an Al13Fe4 phase mixed in the aluminum matrix as nanocrystalline phases, and which has an extremely high strength and a well-balanced high ductility, though being free from any rare earth element.
    Type: Application
    Filed: March 25, 2008
    Publication date: November 4, 2010
    Inventors: Taisuke Sasaki, Kazuhiro Hono, Toshiji Mukai
  • Publication number: 20080017285
    Abstract: A magnesium alloy exhibiting high strength and high ductility, characterized in that it comprises 0.03 to 0.54 atomic % of certain solute atoms belonging to 2 Group, 3 Group or Lanthanoids of the Periodic Table and having an atomic radius larger than that of magnesium and the balanced amount of magnesium, and has a fine crystal grain structure wherein solute atoms having an average crystal grain diameter of 1.5 ?m or less and being unevenly present in the vicinity of crystal grain boundaries at a concentration being 1.5 to 10 times that within crystal grains, wherein an atom selected from the group consisting of Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu can be used as the above solute atom; and a method for producing the magnesium alloy. The above magnesium alloy is novel and achieves high strength and high ductility at the same time.
    Type: Application
    Filed: June 28, 2005
    Publication date: January 24, 2008
    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Toshiji Mukai, Kazuhiro Hono, Hidetoshi Somekawa, Tomoyuki Honma
  • Publication number: 20060188743
    Abstract: An FePt magnetic thin film, characterized in that it has an atomic composition represented by the following formula: FexPt100-x wherein 19<x<52; and a method for manufacturing the FePt magnetic thin film. The FePt magnetic thin film is novel, can be formed at a lowered temperature, and further, has perpendicular magnetic anisotropy.
    Type: Application
    Filed: March 25, 2004
    Publication date: August 24, 2006
    Inventors: Takeshi Seki, Toshiyuki Shima, Koki Takanashi, Kazuhiro Hono