Patents by Inventor Kazuhiro Hoshiba

Kazuhiro Hoshiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor for semiconductor integrated circuit
    Patent number: 5506748
    Abstract: A first electrode, first ferroelectric thin-film, second electrode, second ferroelectric thin-film and third electrode are laid in this order on a source region of a field-effect transistor. The first and third electrodes are connected by a metal lead. The second electrode is connected to a ground line or a drive line.
    Type: Grant
    Filed: October 3, 1994
    Date of Patent: April 9, 1996
    Assignee: Rohm Co., Ltd.
    Inventor: Kazuhiro Hoshiba
  • Semiconductor storage device with a ferroelectric transistor storage cell
    Patent number: 5412596
    Abstract: A semiconductor storage device having a memory array composed of storage ceils arranged in a matrix. The storage cells include a ferroelectric transistor having a metal-ferroelectrics-semiconductor structure and a switching transistor. A source electrode of one of the transistors and a drain electrode of the other transistors are connected to each other. According to the present invention, the necessary time for writing becomes short, realizing a rapid operation of nano second order. Further, many times (10.sup.10 order) of rewriting is possible. This brings a longer life thereof compared with a EEPROM which is rewritable about 10.sup.4 times. Since the reading out is non-destructive, the rewriting is not required so that the life of the device is further lengthened.
    Type: Grant
    Filed: April 28, 1994
    Date of Patent: May 2, 1995
    Assignee: Rohm Co., Ltd.
    Inventor: Kazuhiro Hoshiba
  • Thin film capacitor
    Patent number: 5355277
    Abstract: A thin film capacitor includes a first capacitor composed of a ferroelectric film and a supplementary second capacitor composed of the ferroelectric film surrounding the first capacitor. In a capacitor of the present invention, the second capacitor is formed around a capacitor and the polarized condition thereof is possible to be controlled. Due to this original switching time of the first capacitor can be flexibly adjusted, and there is a significant advantage that switching characteristic of a capacitor can be greatly improved with minimum cost.
    Type: Grant
    Filed: December 17, 1992
    Date of Patent: October 11, 1994
    Assignee: Rohm Co. Ltd.
    Inventor: Kazuhiro Hoshiba
  • Capacitor in a semiconductor integrated circuit and non-volatile memory using same
    Patent number: 5189594
    Abstract: A capacitor used in a semiconductor integrated circuit, in which lower electrode 31, a ferroelectric film 33, and an upper electrode in the form of a comb are formed on the source region 13a of a field-effect transistor 10 in the stated order, to form a ferroelectric capacitor which is apparently made of a plurality of capacitors small in area which are connected in parallel to one another. Thereby, the capacitor for a semiconductor integrated circuit can store a sufficient amount of signal charge, and is short in switching time.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: February 23, 1993
    Assignee: Rohm Co., Ltd.
    Inventor: Kazuhiro Hoshiba