Abstract: This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

Abstract: A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

Abstract: A visible light emitting device includes: three types of LED elements stacked one on another; and first and second optical filters. Each of the LED elements has a light emitting layer configured to emit light of one of three primary colors. Each of the first and second optical filters is disposed between two adjacent ones of the LED elements, and each of the first and second optical filters is operable to reflect or absorb a shorter wavelength light of the lights emitted from two adjacent LED elements.

Abstract: This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

Abstract: A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

Abstract: A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.

Abstract: A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.

Abstract: A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling cheer to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by suppor

Abstract: A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling chamber to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by supp