Patents by Inventor Kazuhiro Kandatsu

Kazuhiro Kandatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer temperature correction system for ion implantation device
    Patent number: 8552409
    Abstract: To provide an ion implantation device capable of correcting the temperature of the wafer. The ion implantation device of the present invention has: an irradiation means that radiates ions; a retention means that includes a disk 112 that retains at least one wafer W; a thermopile 122 that detects, in a noncontact manner, temperature information for a wafer W retained on disk 112; a cooling medium supply unit that enables heat exchange for a wafer W retained on disk 112; and a control unit that calculates the surface temperature of a wafer W retained on disk 112 based on the temperature information detected by thermopile 122 and that determines whether the calculated surface temperature for the wafer is within a permissible temperature range.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 8, 2013
    Assignee: Texas Instruments Incorporated
    Inventor: Kazuhiro Kandatsu
  • Wafer temperature correction system for ion implantation device
    Patent number: 8378316
    Abstract: To provide an ion implantation device capable of correcting the temperature of the wafer. The ion implantation device of the present invention has: an irradiation means that radiates ions; a retention means that includes a disk 112 that retains at least one wafer W; a thermopile 122 that detects, in a noncontact manner, temperature information for a wafer W retained on disk 112; a cooling medium supply unit that enables heat exchange for a wafer W retained on disk 112; and a control unit that calculates the surface temperature of a wafer W retained on disk 112 based on the temperature information detected by thermopile 122 and that determines whether the calculated surface temperature for the wafer is within a permissible temperature range.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: February 19, 2013
    Assignee: Texas Instruments Incorporated
    Inventor: Kazuhiro Kandatsu
  • WAFER TEMPERATURE CORRECTION SYSTEM FOR ION IMPLANTATION DEVICE
    Publication number: 20100330709
    Abstract: To provide an ion implantation device capable of correcting the temperature of the wafer. The ion implantation device of the present invention has: an irradiation means that radiates ions; a retention means that includes a disk 112 that retains at least one wafer W; a thermopile 122 that detects, in a noncontact manner, temperature information for a wafer W retained on disk 112; a cooling medium supply unit that enables heat exchange for a wafer W retained on disk 112; and a control unit that calculates the surface temperature of a wafer W retained on disk 112 based on the temperature information detected by thermopile 122 and that determines whether the calculated surface temperature for the wafer is within a permissible temperature range.
    Type: Application
    Filed: June 15, 2010
    Publication date: December 30, 2010
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Kazuhiro KANDATSU