Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Abstract: A housing of an example of an electronic apparatus has a top surface and a bottom surface and has a flat shape. A power supply section having a flat shape is a power supply section, which is a housing case capable of accommodating a battery or is a battery, and the power supply section is provided at a position inside the housing that intersects with a reference plane perpendicular to the up-down direction. A first substrate is provided parallel to the reference plane on the top surface side relative to the power supply section. A second substrate is provided parallel to the reference plane on the bottom surface side relative to the power supply section. The electronic apparatus includes at least one of a vibrator and a speaker at a position that intersects with the reference plane.

Abstract: A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Abstract: Provided is a novel onium salt used for a resist composition that has high sensitivity and excellent resolution, improved LWR and CDU, and that can inhibit collapse of a resist pattern for both of positive-type and negative-type resists in lithography: an onium salt represented by the following general formula (1), wherein RALU represents any one of a tertiary ether, tertiary carbonate, or acetal formed together with the adjacent oxygen atom and having a cyclic structure; RF represents any one of a fluorine atom, a fluorine-containing alkyl group having 1 to 6 carbon atoms, and a nitro group; Ra represents a hydrocarbyl group having 1 to 20 carbon atoms; n1 represents an integer of 0 or 1; n2 and n3 represent an integer of 1 or 2; one of RF and one of —O—RALU are bonded to carbon atoms adjacent to each other; n4 represents an integer of 0 to 3; and Z+ represents an onium cation.

Abstract: A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

Abstract: A novel sulfonium compound of formula (A) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in lithography properties.

Abstract: A chemically amplified resist composition is provided comprising (A) a polymer P comprising repeat units having an acid labile group containing a fluorinated aromatic ring, repeat units having a phenolic hydroxy group, and repeat units adapted to generate an acid upon exposure, (B) an onium salt type quencher, and (C) a solvent. The resist composition exhibits a high sensitivity, low LWR and improved CDU when processed by photolithography.

Abstract: A molecular resist composition comprising a sulfonium salt having formula (1) or (2) and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

Abstract: A chemically amplified resist composition comprising a base polymer and a quencher in the form of an amine compound of specific structure is provided. The resist composition has a high sensitivity and forms a pattern with a high resolution and improved LWR, independent of whether it is of positive or negative tone.

Abstract: A resist composition comprising a quencher in the form of an amine compound having a highly polar lactone or sultone ring and an acid labile group in a common molecule is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A chemically amplified resist composition comprising (A) a polymer adapted to increase its solubility in alkaline aqueous solution under the action of acid, (B) a photoacid generator capable of generating an acid upon exposure to KrF excimer laser, ArF excimer laser, EB or EUV, and (C) a quencher in the form of an amine compound of specific structure is provided. The resist composition has a high sensitivity and forms a pattern with a high resolution and improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR.

Abstract: A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

Abstract: A sulfonium salt having formula (1) is novel. A chemically amplified resist composition comprising the sulfonium salt as a PAG has advantages including solvent solubility and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation such as KrF or ArF excimer laser, EB or EUV.

Abstract: A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

Abstract: A method of evaluating pancreatic cancer includes (I) an obtaining step of obtaining amino acid concentration data on a concentration value of an amino acid in blood collected from a subject to be evaluated, and (II) an evaluating step of evaluating a state of pancreatic cancer in the subject by calculating a value of a formula using the amino acid concentration data of the subject obtained at the obtaining step and the formula previously established for evaluating the state of pancreatic cancer, including an explanatory variable to be substituted with the concentration value of the amino acid.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits a high sensitivity, and excellent lithography performance factors such as CDU and LWR.

Abstract: A photoacid generator having formula (1a) is provided. A chemically amplified resist composition comprising the PAG forms a pattern of rectangular profile with a good balance of sensitivity and LWR when processed by photolithography using ArF excimer laser, EB or EUV.

Abstract: A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.

Abstract: A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.