Abstract: A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.

Abstract: A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.

Abstract: A solid state image pickup device including: a plurality of pixel groups disposed on a two-dimensional plane defined by horizontal and vertical directions, the plurality of pixel groups being juxtaposed in the horizontal direction, each of the pixel groups including a first pixel column and a second pixel column, the first pixel column including a plurality of pixels regularly disposed at a first pixel pitch in the vertical direction, the second pixel column including a plurality of pixels regularly disposed at a half pitch of the first pixel pitch in the vertical direction relative to the first pixel column, the second pixel columns being disposed in the horizontal direction at a half pitch of a second pixel pitch of pixels of adjacent first pixel columns of the pixel groups; a first separation region formed between pairs of the pixel groups adjacent in the horizontal direction; a single vertical charge transfer path extending in the vertical direction and weaving between the first and second pixel columns o

Abstract: The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.

Abstract: The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.

Abstract: A solid-state image pickup device of the charge-coupled type is improved in that the width W1 (as viewed in the charge transfer direction) of each of the transfer gate electrodes for generating transfer elements in the field shift mode, the width W2 (as viewed in the charge transfer direction) of each of the transfer gate electrode for generating potential barriers also in the field shift mode are selected so as to satisfy the following formula, and a buried channel junction depth X.sub.JBC of each of the vertical charge transfer paths are selected so as to satisfy W1>W2 and/or W2>2.multidot.X.sub.JBC. In the inventive image pickup device, the charge quantity transferred is increased without impairing the vertical resolution of the device.

Abstract: An automatic light measuring device for an image pickup device includes a pair of line sensors suitable for an automatic focusing adjustment and disposed on a semiconductor chip at positions spaced apart by a predetermined distances, an integration time controller for generating an integration control signal for controlling the charge accumulation by incident light by detecting the amount of charges accumulated in the line sensors, a first exposure amount detector for calculating the intensity of incident light from the integration control signal, a second exposure amount detector inclusive of photoelectric conversion elements formed on the semiconductor chip, for detecting the amount of incident light, a pair of lenses mounted above the pair of line sensors for focusing the image of substantially the same subject within the central area of the field of view, and an optical system for applying light within the area broader than the central area of the field of view to the surface of the semiconductor chip inc

Abstract: A range finding device having a lens holder with two tunnels, and two lens plates mounted in front of the tunnels. Two pins are formed on the front surface of the lens holder, the two pins being positioned on vertical positioning lines externally of the vertical center lines of the two tunnels. Each lens plate has an elongated hole extending in the direction of the vertical positioning line, a pin being inserted in the elongated hole. In a preferred embodiment, each lens plate has four holes formed therein. Two of the four holes are used for coupling with two pins. Of these two holes used for positioning, one is a round hole and the other is an elongated hole.

Abstract: A solid image pickup device driving method is provided in which a charge storage type solid image pickup device of a frame transfer interline system is used to detect still picture signals. Either the odd-numbered or even-numbered field elements are transferred to charge transfer paths in a light receiving section and next transferred to a storage section. The remaining field elements are then transferred to charge transfer paths in the light receiving section. The field elemeents residing in the storage section are then transferred to a horizontal CCD for output. Finally, the remaining field elements, having been stored in the charge transfer paths in the light receiving section, are transferred to the storage section, and then transferred to the horizontal CCD for output. The driving method provides for increased vertical resolution and facilitates miniaturization of the device.

Abstract: An image processing method for use in an electronic video endoscopy system in which R, G and B surface sequential color signals are obtained from a CCD disposed in the leading end portion of an endoscope. The surface sequential color signals are converted simultaneously wherein memories corresponding to the respective colors are used to thereby obtain synchronous color signals. In the image processing method, the odd and even fields of the CCD are interline transferred sequentially within one field period to thereby obtain the above-mentioned surface sequential color signals, and data for each of horizontal scanning lines are read out alternately from odd and even field data once stored in the above-mentioned respective memories to thereby complete frame data so as to obtain the above-mentioned synchronous color signals.

Abstract: A radiation image read-out apparatus comprises a linear stimulating ray source for emitting stimulating rays to a linear portion of a stimulable phosphor sheet carrying a radiation image stored therein, and a line sensor constituted by many solid state photoelectric conversion devices. The line sensor extends at least over the length of the linear portion of the stimulable phosphor sheet exposed to stimulating rays. Light emitted by the linear portion of the stimulable phosphor sheet upon stimulation thereof is received and photoelectrically converted by the solid state photoelectric conversion devices. The portion exposed linearly to stimulating rays and the line sensor are moved with respect to the stimulable phosphor sheet, and outputs of the line sensor are sequentially read out in accordance with the movement of the portion exposed linearly to stimulating rays and the line sensor with respect to the stimulable phosphor sheet.

Abstract: A solid-state image pickup unit in which two neighboring horizontal lines are paired for scanning. In the vertical transfer, the photocharge signals on the two lines are transferred to different horizontal CCDs, which concurrently shift out their contents. One of the two horizontal lines is used exclusively for a luminance signal and the other for two color signals. The horizontal line used for color signals has alternating color filters. A switch is used to separate the two color signals resulting from these alternating color filters.

Abstract: A radiation image read-out apparatus comprises a stimulating ray source constituted by many point light sources for sequentially emitting stimulating rays onto a portion of a stimulable phosphor sheet carrying a radiation image stored therein, and a line sensor constituted by many solid state photoelectric conversion devices. The line sensor extends over the length of the portion of the stimulable phosphor sheet linearly exposed to stimulating rays. Light emitted by the exposed portion of the stimulable phosphor sheet is received and photoelectrically converted by the solid state photoelectric conversion devices. The stimulating ray source and the line sensor are moved with respect to the stimulable phosphor sheet in a main scanning direction normal to the array of the solid state photoelectric conversion devices, and then moved with respect thereto in the array direction each time one main scanning step is finished.

Abstract: A color picture solid-state pickup element comprising a solid-state image sensor and a colored matrix microfilter. The image sensor has photo elements arranged in a matrix. The horizontal lines are paired into scanning lines. The scanning lines alternate between two fields, one field being read after the other. The microfilter has rows of uniform colors, with a row covering one horizontal line. Every other row is of a first primary or complementary color. The remaining rows alternate between two other primary or complementary colors.

Abstract: A solid image pickup element for use in interlaced scanning in which at least two lines of photo-elements are simultaneously read in one interlaced scanning line. The lines are algebraically combined to reproduce the color signals and different groups of lines are read for different interlace fields.

Abstract: A method for reading out signal charges in a solid-state image pickup unit providing either an improved resolution for a constant vertical integration density or a reduced vertical integration density while maintaining the same resolution. The photoelectric conversion elements of the unit are arranged in a matrix of rows and columns with m rows of photoelectric conversion elements being assigned to each scanning line. Signal charges generated in the photoelectric conversion elements during exposure are transferred to a vertical transfer section in the order of the m-th row to the first row in each scanning line, and then the charges are transferred to a horizontal charge transfer section using a four-phase driving method.

Abstract: A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.

Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

Abstract: A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.

Abstract: An electronic still camera wherein midway through an exposure the charge signals impressed by incident light on an imaging section are transferred to a storage array while the exposure continues. Corresponding signals on the imaging array and the storage arrays are differenced to form error signals which are added to or subtracted from the two original signals before they are combined.