Patents by Inventor Kazuhiro Kubota
Kazuhiro Kubota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240145640Abstract: A phosphor plate according to the present invention is a phosphor plate including: a plate-like composite including a base material and a phosphor dispersed in the base material, in which both Ry1 and Ry2 are 5.00 ?m or less, where Ry1 is a maximum height on a front surface of the phosphor plate and Ry2 is a maximum height on a back surface.Type: ApplicationFiled: February 21, 2022Publication date: May 2, 2024Applicant: DENKA COMPANY LIMITEDInventors: Yuki KUBOTA, Taiyo YAMAURA, Kazuhiro ITO
-
Publication number: 20240088852Abstract: An amplifier circuit configured to generate an error voltage corresponding the difference between a target voltage and a reference voltage includes: a first differential input pair having a first transistor configured to receive the target voltage at its gate and a second transistor configured to receive the reference voltage at its gate; and a second differential input pair having a third transistor configured to receive the target voltage at its gate and a fourth transistor configured to receive the reference voltage at its gate. The amplifier circuit generates the error voltage based on the reference voltage by using the first or second differential input pair. The first and second transistors are formed as P-channel MOSFETs and the third and fourth transistors are formed as N-channel MOSFETs.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Kanto KUBOTA, Kazuhiro MURAKAMI, Kunimasa TANAKA
-
Patent number: 11027612Abstract: A vehicle power supply system includes a power supply path, and an ECU detaching a fault occurrence portion occurring in a part of the power supply path from the power supply path based on a set value lower than a lowest operation voltage of a load and a voltage related to the power supply path. The set value is set within a normal range of the voltage related to the power supply path. The power supply path includes a plurality of electrical connection units connected to the load and a plurality of connection wirings connecting each of the electrical connection units in a loop shape. In a case that a part of voltages related to each of the connection wirings is equal to or less than the set value, the control unit supplies power to the load via another part of the voltages related to each of the connection wirings.Type: GrantFiled: January 17, 2020Date of Patent: June 8, 2021Assignee: YAZAKI CORPORATIONInventors: Kazuhiro Kubota, Masato Sasahara, Masataka Komiyama, Yoshihito Aoki, Takaaki Izawa
-
Patent number: 10886097Abstract: Disclosed is a plasma processing apparatus including a processing container, an ion trapping member partitioning the inside of the processing container into a processing space and a non-processing space and transmitting radicals and trap ions, a placing table, a first gas supply unit supplying a first processing gas into the non-processing space, a second gas supply unit supplying a second processing gas into the processing space, a first high frequency power supply supplying a high frequency power to generate radicals and ions in the non-processing space, a second high frequency power supply supplying a high frequency power to generate radicals and ions in the processing space, and a third high frequency power supply supplying a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply to draw the ions generated in the processing space into the workpiece.Type: GrantFiled: February 20, 2015Date of Patent: January 5, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Kubota, Masanobu Honda
-
Publication number: 20200262297Abstract: A vehicle power supply system includes a power supply path, and an ECU detaching a fault occurrence portion occurring in a part of the power supply path from the power supply path based on a set value lower than a lowest operation voltage of a load and a voltage related to the power supply path. The set value is set within a normal range of the voltage related to the power supply path. The power supply path includes a plurality of electrical connection units connected to the load and a plurality of connection wirings connecting each of the electrical connection units in a loop shape. In a case that a part of voltages related to each of the connection wirings is equal to or less than the set value, the control unit supplies power to the load via another part of the voltages related to each of the connection wirings.Type: ApplicationFiled: January 17, 2020Publication date: August 20, 2020Inventors: Kazuhiro Kubota, Masato Sasahara, Masataka Komiyama, Yoshihito Aoki, Takaaki Izawa
-
Patent number: 10156916Abstract: An input device identification method is applicable to an input device including at least three contact surfaces. The input device identification method includes the steps of: storing distances between contact surfaces (s01); acquiring coordinates of respective contact surfaces of the input device placed on the touch panel (s02); calculating distances between the acquired coordinates (s03); calculating a similarity ratio between a shape formed by the respective acquired coordinates and a shape formed by the respective contact surfaces on the basis of the calculated distances and the stored distances (s04); and identifying the input device by comparing the stored distances and the calculated distances after converting either one of the stored distances and the calculated distances to the same scale as the other on the basis of the similarity ratio (s05).Type: GrantFiled: November 25, 2016Date of Patent: December 18, 2018Assignee: KOTO CO., LTD.Inventors: Hiroshi Kirita, Kazuhiro Kubota
-
Publication number: 20180150144Abstract: An input device identification method is applicable to an input device including at least three contact surfaces. The input device identification method includes the steps of: storing distances between contact surfaces (s01); acquiring coordinates of respective contact surfaces of the input device placed on the touch panel (s02); calculating distances between the acquired coordinates (s03); calculating a similarity ratio between a shape formed by the respective acquired coordinates and a shape formed by the respective contact surfaces on the basis of the calculated distances and the stored distances (s04); and identifying the input device by comparing the stored distances and the calculated distances after converting either one of the stored distances and the calculated distances to the same scale as the other on the basis of the similarity ratio (s05).Type: ApplicationFiled: November 25, 2016Publication date: May 31, 2018Inventors: Hiroshi KIRITA, Kazuhiro KUBOTA
-
Patent number: 9887109Abstract: A plasma etching method includes a holding step of holding a substrate, a processing gas supplying step of supplying processing gas to a space between the holding unit and an electrode plate facing the holding unit within the processing chamber, and a high frequency power supplying step of converting the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power from a high frequency power supply to at least one of the holding unit and the electrode plate. The processing gas supplying step includes controlling an adjustment unit configured to adjust a supply condition for supplying processing gas with respect to each of the plurality of supply parts such that the supply condition that is adjusted varies between a first position and a second position.Type: GrantFiled: December 15, 2015Date of Patent: February 6, 2018Assignee: Tokyo Electron LimitedInventors: Masaya Kawamata, Masanobu Honda, Kazuhiro Kubota
-
Patent number: 9881806Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.Type: GrantFiled: March 14, 2016Date of Patent: January 30, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Takayuki Katsunuma, Masanobu Honda, Kazuhiro Kubota, Hironobu Ichikawa
-
Publication number: 20160372299Abstract: Disclosed is a plasma processing apparatus including a processing container, an ion trapping member partitioning the inside of the processing container into a processing space and a non-processing space and transmitting radicals and trap ions, a placing table, a first gas supply unit supplying a first processing gas into the non-processing space, a second gas supply unit supplying a second processing gas into the processing space, a first high frequency power supply supplying a high frequency power to generate radicals and ions in the non-processing space, a second high frequency power supply supplying a high frequency power to generate radicals and ions in the processing space, and a third high frequency power supply supplying a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply to draw the ions generated in the processing space into the workpiece.Type: ApplicationFiled: February 20, 2015Publication date: December 22, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro KUBOTA, Masanobu HONDA
-
Patent number: 9460893Abstract: A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.Type: GrantFiled: July 6, 2012Date of Patent: October 4, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Masaya Kawamata, Masanobu Honda, Kazuhiro Kubota
-
Patent number: 9396968Abstract: An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film. The silicon oxide film has at least one of a silicon content per unit volume, a fluorine content per unit volume, and a volume density that varies in a depth direction.Type: GrantFiled: June 24, 2013Date of Patent: July 19, 2016Assignee: Tokyo Electron LimitedInventor: Kazuhiro Kubota
-
Patent number: 9390935Abstract: Provided is an etching method for forming a space with an aspect ratio of 50 or more in a workpiece including a silicon oxide film and a hard mask. The etching method includes: a first step of exposing the workpiece to plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode; and a second step of further exposing the workpiece to the plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode. A distance between the placing table and the upper electrode in the first step is at least 5/3 times of a distance between the placing table and the upper electrode in the first step.Type: GrantFiled: November 17, 2014Date of Patent: July 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Maju Tomura, Hikaru Watanabe, Fumiya Kobayashi, Kazuhiro Kubota, Masanobu Honda
-
Publication number: 20160196981Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.Type: ApplicationFiled: March 14, 2016Publication date: July 7, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Takayuki KATSUNUMA, Masanobu HONDA, Kazuhiro KUBOTA, Hironobu ICHIKAWA
-
Patent number: 9385498Abstract: Disclosed is a crimp machine capable of eliminating product management for a relay connector per an ID. In the crimp machine, by a power source line, a ground line, and a signal line being positioned between a terminal mount table to which a crimp connector disposed in the relay connector is mounted and a crimp blade, and by the crimp blade being move close to a terminal mount table, the power source line, the ground line, and the signal line are thus crimped, wherein a connection terminal is disposed on the terminal mount table and an ID is made to output from the connection terminal.Type: GrantFiled: April 17, 2012Date of Patent: July 5, 2016Assignee: Yazaki CorporationInventors: Shuuji Satake, Akiyoshi Kanazawa, Ken Ito, Yoshimitsu Maejima, Kazuya Tsubaki, Kazuhiro Kubota
-
Patent number: 9349619Abstract: A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.Type: GrantFiled: August 28, 2012Date of Patent: May 24, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Masaya Kawamata, Masanobu Honda, Kazuhiro Kubota
-
Patent number: 9330930Abstract: A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas.Type: GrantFiled: February 6, 2015Date of Patent: May 3, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Kubota, Masanobu Honda, Takayuki Katsunuma
-
Patent number: 9318340Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.Type: GrantFiled: October 25, 2012Date of Patent: April 19, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Takayuki Katsunuma, Masanobu Honda, Kazuhiro Kubota, Hironobu Ichikawa
-
Publication number: 20160099161Abstract: A plasma etching method includes a holding step of holding a substrate, a processing gas supplying step of supplying processing gas to a space between the holding unit and an electrode plate facing the holding unit within the processing chamber, and a high frequency power supplying step of converting the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power from a high frequency power supply to at least one of the holding unit and the electrode plate. The processing gas supplying step includes controlling an adjustment unit configured to adjust a supply condition for supplying processing gas with respect to each of the plurality of supply parts such that the supply condition that is adjusted varies between a first position and a second position.Type: ApplicationFiled: December 15, 2015Publication date: April 7, 2016Inventors: Masaya KAWAMATA, Masanobu HONDA, Kazuhiro KUBOTA
-
Patent number: 9279184Abstract: A method of forming a pattern is provided. The method includes an etching step of forming a predetermined pattern in a silicon-containing film by etching the silicon-containing film deposited on a substrate through a mask by plasma generated from an etching gas containing a fluorocarbon gas, and a film deposition step of depositing a silicon oxide film or a silicon nitride film on a surface of the predetermined pattern by oxidizing or nitriding a silicon-containing layer adsorbed on the surface of the predetermined pattern by supplying a silicon compound gas, by using plasma generated from an oxidation gas or a nitriding gas.Type: GrantFiled: July 10, 2013Date of Patent: March 8, 2016Assignee: Tokyo Electron LimitedInventors: Kazuhiro Kubota, Ryukichi Shimizu