Publication number: 20240098962
Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.
Type:
Application
Filed:
February 7, 2023
Publication date:
March 21, 2024
Applicant:
Kioxia Corporation
Inventors:
Daisuke WATANABE, Akifumi GAWASE, Takeshi IWASAKI, Kazuhiro KATONO, Yusuke MUTO, Yusuke MIKI, Akinori KIMURA