Abstract: A switch for a rotating machine is provided with: a casing supporting two or more terminals respectively having contacts so as to hold the contacts exposed on an inside of the casing; a rod having a rod body fitting in the casing axially movably from a first position to a second position; a first spring axially biasing the rod returning back; a carrier housed in the casing and combined with the rod body to follow axial motion of the rod body; a conductor carried by the carrier and exposed on a side face of the carrier toward the terminals and depart from the terminals at the second position; a second spring intervening between the carrier and the conductor to bias the conductor toward the contacts; and a seal intervening between the rod and the casing and fluid-tightly isolating an interior of the casing.

Abstract: A switch for a rotating machine is provided with: a casing supporting two or more terminals respectively having contacts so as to hold the contacts exposed on an inside of the casing; a rod having a rod body fitting in the casing axially movably from a first position to a second position; a first spring axially biasing the rod returning back; a carrier housed in the casing and combined with the rod body to follow axial motion of the rod body; a conductor carried by the carrier and exposed on a side face of the carrier toward the terminals and depart from the terminals at the second position; a second spring intervening between the carrier and the conductor to bias the conductor toward the contacts; and a seal intervening between the rod and the casing and fluid-tightly isolating an interior of the casing.

Abstract: An object of the present invention is to provide a motor rotor support suitable for an axial gap motor and a method for manufacturing the same. The motor rotor support for supporting a magnetic body disposed on a rotor of the motor is configured by laminating single materials each formed from a hot-worked material or a cold-worked material preferably composed of an 18Mn-18Cr nonmagnetic steel.

Abstract: An object of the present invention is to provide a motor rotor support suitable for an axial gap motor and a method for manufacturing the same. The motor rotor support for supporting a magnetic body disposed on a rotor of a motor is configured by a nonmagnetic steel having a relative permeability of less than 1.005 and a 0.2% yield strength at room temperature of 550 MPa or more.

Abstract: An object of the present invention is to provide a motor rotor support suitable for an axial gap motor and a method for manufacturing the same. The motor rotor support for supporting a magnetic body disposed on a rotor of a motor is configured by a nonmagnetic steel having a relative permeability of less than 1.005 and a 0.2% yield strength at room temperature of 550 MPa or more.

Abstract: An object of the present invention is to provide a motor rotor support suitable for an axial gap motor and a method for manufacturing the same. The motor rotor support for supporting a magnetic body disposed on a rotor of the motor is configured by laminating single materials each formed from a hot-worked material or a cold-worked material preferably composed of an 18Mn-18Cr nonmagnetic steel.

Abstract: A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).

Abstract: A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).