Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: A substrate processing apparatus includes: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate; a gas rectifying part configured to supply a process gas to the substrate; a sealing part installed in the gas rectifying part; a heat insulating part installed between the sealing part and an upstream side surface of the gas rectifying part; and a first pressure adjusting part connected to the heat insulating part.

Abstract: A substrate processing apparatus includes: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate; a gas rectifying part configured to supply a process gas to the substrate; a sealing part installed in the gas rectifying part; a heat insulating part installed between the sealing part and an upstream side surface of the gas rectifying part; and a first pressure adjusting part connected to the heat insulating part.

Abstract: A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Abstract: A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

Abstract: There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.

Abstract: Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

Abstract: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Abstract: There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.

Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Abstract: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Abstract: Embodiments described herein relate to a substrate processing apparatus includes a reaction tube, a processing chamber provided inside the reaction tube to process a substrate therein, an induction target provided inside the reaction tube to surround the processing chamber and configured to heat the substrate, a heat insulator provided inside the reaction tube to surround the induction target, an induction target provided outside the reaction tube to inductively heat at least the induction target, a first gas supply unit for supplying a first gas into the processing chamber, and a second gas supply unit for supplying a second gas to a first gap provided between the induction target and the heat insulator.