Abstract: An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlXGa(1-X)N (0.4?X?0.90). The second nitride semiconductor layer contains AlYGa(1-Y)N with a film thickness t (nm) satisfying 5?t?25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy ?0.009×t+X+0.22?0.03?Y??0.009×t+X+0.22+0.03.

Abstract: An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlXGa(1-X)N (0.4?X?0.90). The second nitride semiconductor layer contains AlYGa(1-Y)N with a film thickness t (nm) satisfying 5?t?25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy ?0.009×t+X+0.22?0.03?Y??0.009×t+X+0.22+0.03.

Abstract: A portable terminal device for communicating other terminal device includes: a display configured to display an image data; a transmitting unit configured to transmit the image data to the other terminal device; a receiving unit configured to receive a reception image data from the other terminal device; a display control unit configured to allow an application image data to be displayed by a predetermined application program to be displayed on the display and either one of the image data and the reception image data; a selecting unit configured to select either one of the image data and the application image data displayed on the display; and a transmission control unit configured to allow the transmitting unit to transmit the image data or the application image data selected by the selecting unit to the other terminal device.

Abstract: A cellular phone communicates data with an information provision apparatus connected via a packet network. A control unit obtains an information management apparatus identifier for identifying an information management apparatus within the packet network which is an intermediation at the time of the data communication carried out with the information provision apparatus further connected via an external network among the information provision apparatuses, determines whether the identifier added to the data at the time of the data communication is coincident with the information management apparatus identifier, and calculates a data amount at the time of the data communication carried out with the information provision apparatus connected via the external network. A storage unit stores the calculated data amount.

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Abstract: The present invention provides an optical device that is miniature, is highly sensitive and has a simplified package, and a manufacturing method thereof with high production efficiency and high reliability. The present invention is an optical device comprising: a photoelectric conversion element (50) having at least one photoelectric conversion portion (1) which is formed on a substrate (10); a sealing material (14); and a connection terminal (3). The optical device comprises an optical window which is an interface between the photoelectric conversion element (50) and an outside of the optical device; and an aperture (6) formed in the sealing material 14, and whose bottom face is the optical window. An entire face of the optical window is exposed to the outside. An optical adjustment element (13) may be formed on the interface. In this case, the interface between the optical adjustment element (13) and the outside is the optical window.

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Abstract: A communication apparatus having a touch screen, a memory and a controller, and configured to be used for visiting and browsing web pages is provided. The touch screen is configured to display a visited web page, and to sense a first operation and a second operation performed on the touch screen. The first operation and the second operation are different from each other. The memory is configured to store history data of a plurality of visited web pages. The controller is configured to allow returning from a current web page to a preceding web page listed immediately before the current web page in the history data upon the touch screen sensing the first operation. The controller is configured to allow continuing from the current web page to a next web page listed immediately after the current web page in the history data upon the touch screen sensing the second operation.

Abstract: A mobile terminal includes a storage unit, a wireless LAN communication unit, and a display unit. The storage unit stores device identification information for identifying the mobile terminal. The wireless LAN communication unit connects to a management server managing, for each mobile terminal, attribute information related to at least one content server to which the mobile terminal is connected via a network. The wireless LAN communication unit transmits the device identification information to the management server along with a request for the attribute information. Then, the wireless LAN communication unit receives one or more pieces of attribute information from the management server. The display unit displays the received one or more pieces of attribute information.

Abstract: A cellular phone communicates data with an information provision apparatus connected via a packet network. A control unit obtains an information management apparatus identifier for identifying an information management apparatus within the packet network which is an intermediation at the time of the data communication carried out with the information provision apparatus further connected via an external network among the information provision apparatuses, determines whether the identifier added to the data at the time of the data communication is coincident with the information management apparatus identifier, and calculates a data amount at the time of the data communication carried out with the information provision apparatus connected via the external network. A storage unit stores the calculated data amount.

Abstract: The present invention provides an optical device that is miniature, is highly sensitive and has a simplified package, and a manufacturing method thereof with high production efficiency and high reliability. The present invention is an optical device comprising: a photoelectric conversion element (50) having at least one photoelectric conversion portion (1) which is formed on a substrate (10); a sealing material (14); and a connection terminal (3). The optical device comprises an optical window which is an interface between the photoelectric conversion element (50) and an outside of the optical device; and an aperture (6) formed in the sealing material 14, and whose bottom face is the optical window. An entire face of the optical window is exposed to the outside. An optical adjustment element (13) may be formed on the interface. In this case, the interface between the optical adjustment element (13) and the outside is the optical window.

Abstract: A portable terminal device for communicating other terminal device includes: a display configured to display an image data; a transmitting unit configured to transmit the image data to the other terminal device; a receiving unit configured to receive a reception image data from the other terminal device; a display control unit configured to allow an application image data to be displayed by a predetermined application program to be displayed on the display and either one of the image data and the reception image data; a selecting unit configured to select either one of the image data and the application image data displayed on the display; and a transmission control unit configured to allow the transmitting unit to transmit the image data or the application image data selected by the selecting unit to the other terminal device.

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Abstract: A light emitting diode is provided. In reply to acceptance of a key operation in a key unit, the CPU instructs the light emitting diode to light up before the result of the process in compliance with the key operation is displayed on the LCD.

Abstract: The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.

Abstract: A field effect transistor including a first compound semiconductor layer (2) serving as a buffer layer, an InAs layer (3) serving as a channel layer, and a second compound semiconductor layer (4) serving as an electron donor layer or a barrier layer which are, in this order, deposited on a semiconductor substrate (1) having a lattice constant different from that of InAs. The first compound semiconductor layer (2) is formed from a material selected from AlGaAsSb, AlGaPSb, AlInAsSb and AlInPSb which are substantially in lattice matching with InAs and have a bandgap greater than that of InAs, and hence the first layer (2) has a simple structure. An FET having excellent high frequency characteristics can be obtained on the substrate (1) having a lattice constant different from that of the InAs layer (3).