Abstract: Provided is an information processing device including: a measurement result acquiring unit configured to acquire a measurement result obtained by measuring a sample of a subject by using a measuring device; a history acquiring unit configured to acquire a history related to the subject; and a presentation information generation unit configured to generate information to be presented to the subject by using the measurement result of the subject, the history of the subject, a measurement result obtained by measuring a sample of another person, and a history related to the other person, and, according to the above information processing device, desirable information for a user may be generated.

Abstract: A simple configuration is used to make a determination of suitability of a cartridge including a case where the cartridge is unused. An examination system (1) includes a cartridge (2) to which identification information is assigned and an examination device (3) that acquires the identification information and performs an examination. The examination system (1) makes a determination of suitability of the cartridge based on the identification information and controls an operation of the examination device in accordance with a result of the determination.

Abstract: There is provided a sensing method which can detect a detection target with good sensitivity. A detection target sensing method includes supplying a detection target to a base having a first substance immobilized on a surface thereof, the detection target being bindable to the first substance; supplying a second substance to the base after the detection target is supplied thereto, the second substance being bindable to the detection target; and supplying a metal particle to the base after the second substance is supplied thereto, the metal particle being bindable to the second substance.

Abstract: A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.

Abstract: A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Abstract: Provided is a light emitting element capable of improving light extraction efficiency and suppressing the nonuniformity of emission intensity distribution over the entire surface of a light extraction surface. The light emitting element is provided with a semiconductor multilayer body having an n-type semiconductor layer and an emission layer and a p-type semiconductor layer, and an electrode pad connected to the p-type semiconductor layer. The semiconductor multilayer body has a large number of projections on one main surface thereof through which the light from the emission layer is emitted. The main surface of the semiconductor multilayer body has a first region located in the vicinity of the electrode pad, and a second region being further separated from the electrode pad than the first region. The interval between the projections in the second region is smaller than that in the first region.

Abstract: A method for manufacturing a p-type gallium nitride compound semiconductor includes providing a gallium nitride compound semiconductor containing a p-type impurity on a surface of a conductive substrate, immersing in an electrolytic solution the conductive substrate on which the gallium nitride compound semiconductor is provided, providing a cathode to be in contact with the electrolytic solution, and applying a current between the cathode and the conductive substrate serving as an anode to activate the p-type impurity.

Abstract: A p type group III nitride semiconductor layer can be manufactured without causing its crystal deterioration, and without requiring any complicated post-treatment, by repeating a plurality of times the following steps: the step A of growing a group III nitride semiconductor layer containing p type impurities; the step B of discontinuing the growth of the group III nitride semiconductor layer by stopping supplies of the respective material gases and the carrier gas, and replacing an atmospheric gas within a film forming apparatus with an inert gas, and reducing a temperature of the substrate from a growth temperature; and the step C of resuming the growth of the group III nitride semiconductor layer by again raising the temperature of the substrate and supplying the material gases and the carrier gas into the film forming apparatus.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Abstract: The present invention is a light-emitting element provided with semiconductor layers of gallium nitride compounds 4 having a multilayer structure including an emitting layer 3 formed by subjecting gallium nitride compounds to epitaxial growth on a surface 2 of a substrate 1, wherein a back surface 7 of the semiconductor layers 4 exposed by removal of the substrate 1 or an outermost layer 5 of the semiconductor layers 4 is provided as a radiating surface 8 for radiating light emitted from the emitting layer 3 to the outside, and able to provide a higher emission intensity from smaller electrical power because the absence of a substrate greatly improves the radiation efficiency of light.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.