Abstract: Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process and an additional process for printing on print data, and an image density calculation section that executes the rasterizing process on the print data without the additional process and calculates image density information used in control of an image forming process in the printing device from raster image data generated through the rasterizing process to process the print data at a speed higher than a speed in print image generation section, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes image density information of a page prior to a page of the print image data printed by the printing device to be supplied to the printing device.

Abstract: Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process with a resolution for printing on print data, and an image density calculation section that executes the rasterizing process on the print data with a resolution lower than the resolution for printing and calculates image density information used in control of an image forming process in the printing device based on raster image data which is generated through the rasterizing process and has a resolution lower than the resolution for printing, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes the image density information of a page prior to a page of the print image data being printed by the printing device to be supplied to the printing device.

Abstract: Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process with a resolution for printing on print data, and an image density calculation section that executes the rasterizing process on the print data with a resolution lower than the resolution for printing and calculates image density information used in control of an image forming process in the printing device based on raster image data which is generated through the rasterizing process and has a resolution lower than the resolution for printing, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes the image density information of a page prior to a page of the print image data being printed by the printing device to be supplied to the printing device.

Abstract: Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process and an additional process for printing on print data, and an image density calculation section that executes the rasterizing process on the print data without the additional process and calculates image density information used in control of an image forming process in the printing device from raster image data generated through the rasterizing process to process the print data at a speed higher than a speed in print image generation section, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes image density information of a page prior to a page of the print image data printed by the printing device to be supplied to the printing device.

Abstract: Provided is a positive electrode plate, which is high in the peeling strength of an anode activating substance layer and which is suppressed in the increase of a battery resistance. Also provided are a battery using the positive electrode plate, a vehicle having the battery mounted thereon, a battery-mounting device, and a positive electrode plate manufacturing method capable of manufacturing the anode activating substance layer properly. The positive electrode plate includes a substrate having conductivity, and a positive electrode active material layer formed in the substrate and containing positive electrode active material particles, a conductive material and binders. These binders are made of either only polyethylene oxide, or only polyethylene oxide and carboxymethyl cellulose.

Abstract: To provide a positive electrode active material for a non-aqueous electrolyte secondary battery, which can achieve high capacity and high output simultaneously, and a non-aqueous electrolyte secondary battery using the same. A non-aqueous electrolyte secondary battery is obtained by using as a positive electrode, a positive electrode active material for a non-aqueous electrolyte secondary battery, which is expressed by the general formula: Lix(Ni1-yCoy)1-zMzO2 (0.98?x?1.10, 0.05?y?0.4, 0.01?z?0.2, M=at least one element selected from the group of Al, Zn, Ti and Mg), and which has a Li site occupancy of the Li site in crystal of 98.5% or more, and a metal site occupancy of the metal site of from 95% to 98% inclusive, obtained by Rietveld analysis.

Abstract: A semiconductor laser of the present invention includes: a Zn.sub.1-X Cd.sub.X Se active layer (0<X.ltoreq.0.3); a pair of optical confinement structures for interposing the Zn.sub.1-x Cd.sub.X Se active layer therebetween; and a pair of cladding layers for interposing the optical confinement structures and the Zn.sub.1-X Cd.sub.X Se active layer therebetween, wherein an energy band gap of the optical confinement structure monotonously increases as a distance from the Zn.sub.1-X Cd.sub.X Se active layer increases.

Abstract: Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.

Abstract: A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam containing at least hydrogen molecules is irradiated from a plasma generating room attached to a MBE chamber, and cleans the surface of a compound semiconductor at low temperature. By an additional mechanism attached to the MBE chamber, a compound semiconductor thin film of high quality is grown on the cleaned surface of the compound semiconductor.

Abstract: Disclosed is a photo semiconductor material characterized in the blue to ultraviolet wavelength region. The semiconductor is firmed by lattice matching a sulfide-selenide manganese-zinc epitaxial mixed crystal film to the substrate. A blue laser diode is fabricated by forming a double hereto quantum well structure on a substrate by using sulfide-selenide manganese-zinc mixed crystal films as clad layers. A zinc molecular beam, a manganese molecular beam, a sulfur molecular beam, and a selenium molecular beam are simultaneously emitted onto a GaAs substrate in an ultrahigh vacuum, and a mixed crystal of Zn.sub.1-x Mn.sub.x S.sub.y Se.sub.1-y (0<x<1, 0<y<1) is obtained. In particular, the molecular beam pressure is adjusted so as to lattice matched to the substrate. As the material for the substrate, for example, GaAs and ZnSe may be used. Moreover, on an n-type GaAs single crystal substrate, a 2 .mu.m thick chlorine doped n-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.

Abstract: This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting of a plurality of stacked pairs of ZnSe semiconductor layer and acceptor-impurity-doped ZnS.sub.0.12 Se.sub.0.88 mixed crystal semiconductor layer formed on a part of a buffer layer of ZnS.sub.0.06 Se.sub.0.94 etc. which is formed on a crystalline substrate of GaAs etc., the n-type semiconductor region being formed on the part of the buffer layer, where the superlattice is not formed, and the side wall of the superlattice region contiguous to the n-type region to form pn-junction being made clean by etching, so that a pn-junction of n-type semiconductor and p-type semiconductor having high carrier-density resulted.