Abstract: Provided is a substrate placement stage or substrate processing apparatus which can suppress thermal deformation of the substrate placement stage when the substrate placement stage on which a substrate is placed is heated in a process chamber. The substrate placement stage includes: a heating element; a first member surrounding the heating element; and a second member covering a surface of the first member and including a placing surface for placing a substrate thereon, wherein the first member is made of a first material containing ceramics and aluminum, and the second member is made of a second material containing ceramics and aluminum, a content of the ceramics in the second material being lower than that of the first material.

Abstract: A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

Abstract: To prevent contamination of a substrate by natural oxide film etc in the inside-apparatus transfer period, a CVD apparatus is provided with a wafer deposition part 10 and a wafer transfer part 30. Wafer transfer part 30 includes cassette mounting bases 31(1), 31(2), 31(3), 31(4), wafer transfer chamber 32, cover opening/closing mechanisms 33(1), 33(2), 33(3), and 33(4) and a wafer transfer robot 34. Transferring of a wafer 51 between cassette 52 mounted on cassette mounting bases 31(1), 31(2), 31(3), 31(4) and wafer deposition part 10 is performed through a sealed space provided by wafer transfer chamber 32. This sealed space is cleansed by inert gas by means of a vacuum evacuation line 35, inert gas supply line 36, oxygen concentration detector 37 and control part 38.

Abstract: A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

Abstract: To prevent contamination of a substrate by natural oxide film etc in the inside-apparatus transfer period, a CVD apparatus is provided with a wafer deposition part 10 and a wafer transfer part 30. Wafer transfer part 30 includes cassette mounting bases 31(1), 31(2), 31(3), 31(4), wafer transfer chamber 32, cover opening/closing mechanisms 33(1), 33(2), 33(3), and 33(4) and a wafer transfer robot 34. Transferring of a wafer 51 between cassette 52 mounted on cassette mounting bases 31(1), 31(2), 31(3), 31(4) and water deposition part 10 is performed through a sealed space provided by wafer transfer chamber 32. This sealed space is cleansed by inert gas by means of a vacuum evacuation line 35, inert gas supply line 36, oxygen concentration detector 37 and control part 38.

Abstract: A semiconductor fabricating apparatus having a vertical reaction furnace, a boat for holding plural wafers in a multi-layered fashion and being loaded into the vertical reaction furnace, a storage disposed at a location corresponding to the boat for storing at least one of the wafer cassettes, a wafer transfer device for transferring the wafer between the storage and the boat, a cassette transfer unit for transferring the wafer cassettes between the apparatus and outside thereof, a cassette transfer device for effecting the transfer of the wafer cassettes between the cassette transfer unit and the storage, and a plurality of cassette shelves disposed within a range allowing transfer of the wafer cassettes from the cassette transfer device for receiving the wafer cassettes in upwardly-oriented positions.

Abstract: A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

Abstract: A wafer transfer plate adapted to be disposed on a wafer transfer unit for transferring a wafer within a wafer manufacturing system, which comprises at least one wafer contact portion designed to be held in contact with the wafer as the wafer transfer plate is loaded with the wafer, a coated film being formed of a material which does not contain harmful elements and provided at a region including the wafer contact portion.

Abstract: Proposed is a machining apparatus with a laser beam, wherein a stage is controlled and driven to cause a target to come close to a beam spot when the target is located far away from the beam spot, and a laser beam radiation system is controlled and driven to cause the beam spot to come closer to the target when the target is located within a predetermined range with respect to the beam spot.