Abstract: A solid-state imaging device including a semiconductor substrate including photoelectric conversion elements formed in first and second directions, color filters of respective colors formed on the semiconductor substrate, and lens elements formed on the color filters. Each of the lens elements includes a transmission portion and a microlens portion, the microlens portion has a height greater than a height of the transmission portion, the transmission portion is formed between the microlens portion and the color filter such that light from the microlens portion is transmitted toward the photoelectric conversion element, and the lens elements are formed such that the microlens portions have gaps between the microlens portions adjacent in the first and second directions, and a third direction intersecting the first and second directions at 45° , and that the transmission portions are formed connected to each other with no gaps therebetween in the first, second and third directions.

Abstract: A plurality of distributed power generation systems are connected via the Internet to a managing apparatus in a managing company. A power company communicates with the managing apparatus via another line. At peak times of power consumption in the midsummer and so forth, the power company requests the managing company to supply the power. The managing company controls to remotely set generation capacity of the distributed generation systems at maximum so as to reverse surplus power therefrom to a power system. A normal power rate is discounted for a user of the distributed generation system for his/her cooperation with the power company. The managing company charges the power company based on the surplus electric energy supplied to the power company.

Abstract: Proton-exchange membrane fuel-cell power generating equipment includes a heat exchanger coupled to a process burner and, therethrough, to a fan. When water needs to be heated, such as during startup, the water is circulated through the heat exchanger and the process burner is operated (ignited) to heat the water. When the water needs to be cooled, such as when a hot water reserving tank is full, the water is circulated through the heat exchanger and the fan is operated, but the process burner is not operated, to cool the water. Water is circulated through part or all of a water system to prevent freezing while the system is stopped. Optionally, the process burner is operated to heat the circulated water. The heat exchanger and other heat exchangers in the system are arranged to efficiently recover heat from burners, a fuel-cell cooling system and exothermic processes.

Abstract: The present invention provides a proton-exchange membrane fuel cell power generating equipment that keeps temperature of coolant of a fuel cell in a predetermined temperature range without stop operation of the equipment even when a hot water reserving tank is filled with hot water and the hot water is not discharged to the outside, automatically prevents freezing of a water system during stop operation of the equipment, minimizes maintenance work in a cold region or in the winter season, has high reliability with equipment's service life extended, and supplies hot water heated by efficiently recovering exhaust heat from plural heat exchangers installed in the equipment to the hot water reserving tank. The power generating equipment has a line for circulating and feeding hot water A produced by exchanging heat in the heat exchanger connected to a process gas burner for burning hydrogen until the equipment becomes stable in starting operation.

Abstract: A plurality of distributed power generation systems are connected via the Internet to a managing apparatus in a managing company. A power company communicates with the managing apparatus via another line. At peak times of power consumption in the midsummer and so forth, the power company requests the managing company to supply the power. The managing company controls to remotely set generation capacity of the distributed generation systems at maximum so as to reverse surplus power therefrom to a power system. A normal power rate is discounted for a user of the distributed generation system for his/her cooperation with the power company. The managing company charges the power company based on the surplus electric energy supplied to the power company.

Abstract: A making method of a semiconductor device comprising the step of forming a first silicon layer on a silicon substrate, forming a second silicon layer comprising amorphous silicon on the first silicon layer, then crystallizing the second silicon layer and further forming a conductive layer made of a metal silicide or a metal on the second silicon layer, wherein the method comprises forming an intermediate layer to the surface of the first silicon layer after forming the first silicon layer and before forming the second silicon layer, in which the interlayer film has a film thickness within such a range as electrons are conducted by direct tunneling and such a film thickness as disconnecting the succession of the crystallinity of the first silicon layer upon crystallization of the second silicon layer. Accordingly, fluctuation of Vth caused by inter-diffusion of impurities by way of the metal silicide layer is reduced in CMOS of the dual layered polysilicon polycide structure is decreased.

Abstract: A process of fabricating a semiconductor device, includes the steps of: forming a side wall insulating film on a side portion of a gate electrode formed on a silicon substrate; forming a source/drain region in the silicon substrate, and subjecting the source/drain region to an activating heat treatment; forming a metal film on the surface of the source/drain region, and making the metal film react with the silicon substrate by a heat treatment thereby forming a silicide layer; wherein a first furnace heat treatment is performed after formation of the side wall insulating film and before formation the source/drain region; and an oxide film formed on the surface of the silicon substrate is removed before formation of the metal film, a surface side of the silicon substrate is made amorphous by doping ions of arsenic into the silicon substrate, and the metal film is formed.

Abstract: A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and contributing to the growth of the insulating film before the heat treatment for activating the electrode film. The step of drawing out the impurities is a step of preliminary heat treatment at a temperature at least the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film. The preliminary heat treatment is preferably performed at a temperature of 450.degree. C. to 800.degree. C., more preferably 450.degree. C. to 700.degree. C. The preliminary heat treatment may be performed after the formation of the electrode film or may be performed during the formation of the electrode film after each formation of one or more thin film layers for forming the electrode film.

Abstract: An ion implanter including an ion beam generator for irradiating an ion beam toward a rotary drum having a front surface with a number of substrates fixed and equally spaced circumferentially thereof. The rotary drum is supported for rotation and reciprocation so that the substrates are exposed in succession to the ion beam. A plurality of surface potential sensors are positioned adjacent the front surface of the rotary drum. The surface potential sensors are positioned at different angular distances with respect to the ion beam for generating surface potential signals in response to surface potentials on the respective substrates. The surface potential sensors may be positioned on a line extending in a direction of reciprocation of the rotary disc for producing surface potential signals in response to surface potentials at different positions on each of the substrates.

Abstract: Corrosion of metals such as silver and copper by sulfur and chlorine containing entities are substantially prevented by surrounding these materials with a suitable polymeric structure. The structure should be a polymer containing a material such as copper or aluminum that reacts readily with corrosive gases. In one advantageous embodiment a polymer bag containing approximately 35 weight percent of dispersed, powdered copper is employed to enclose a metal containing structure such as a printed circuit board. Use of this expedient substantially reduces corrosion of the printed circuit board.