Patents by Inventor Kazuhiro Taniwaki

Kazuhiro Taniwaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 7830715
    Abstract: A semiconductor device includes a semiconductor substrate including an element region which is surrounded by an element isolation insulation layer, a transistor including a gate electrode which is provided on the element region, and a source region and a drain region which are provided in the first element region, a first auxiliary wiring layer and a second auxiliary wiring layer which extend in a channel length direction and are provided on the element isolation insulation layer such that the first transistor is interposed between the first auxiliary wiring layer and the second auxiliary wiring layer, and a control circuit which sets, while the first transistor is in an ON state, the first auxiliary wiring layer and the second auxiliary wiring layer at a first voltage of the same polarity as a gate voltage of the first transistor that is in the ON state.
    Type: Grant
    Filed: June 3, 2008
    Date of Patent: November 9, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Taniwaki, Toshifumi Minami
  • Method and system for recovering catalyst for fuel cell
    Patent number: 7553793
    Abstract: A method for recovering a catalyst for a fuel cell includes a collection step in which a catalyst is collected by attracting, using a magnetic force, a magnetic material contained in at least one of the catalyst and a carrier on which the catalyst is supported. A system for recovering a catalyst for a fuel cell includes a collection device that attracts, using a magnetic force, a magnetic material contained in at least one of a catalyst and a carrier on which the catalyst is supported.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: June 30, 2009
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventor: Kazuhiro Taniwaki
  • SEMICONDUCTOR DEVICE
    Publication number: 20080298125
    Abstract: A semiconductor device includes a semiconductor substrate including an element region which is surrounded by an element isolation insulation layer, a transistor including a gate electrode which is provided on the element region, and a source region and a drain region which are provided in the first element region, a first auxiliary wiring layer and a second auxiliary wiring layer which extend in a channel length direction and are provided on the element isolation insulation layer such that the first transistor is interposed between the first auxiliary wiring layer and the second auxiliary wiring layer, and a control circuit which sets, while the first transistor is in an ON state, the first auxiliary wiring layer and the second auxiliary wiring layer at a first voltage of the same polarity as a gate voltage of the first transistor that is in the ON state.
    Type: Application
    Filed: June 3, 2008
    Publication date: December 4, 2008
    Inventors: Kazuhiro TANIWAKI, Toshifumi MINAMI
  • Method and System for Recovering Catalyst for Fuel Cell
    Publication number: 20080050623
    Abstract: A method for recovering a catalyst for a fuel cell includes a collection step in which a catalyst is collected by attracting, using a magnetic force, a magnetic material contained in at least one of the catalyst and a carrier on which the catalyst is supported. A system for recovering a catalyst for a fuel cell includes a collection device that attracts, using a magnetic force, a magnetic material contained in at least one of a catalyst and a carrier on which the catalyst is supported.
    Type: Application
    Filed: September 20, 2006
    Publication date: February 28, 2008
    Inventor: Kazuhiro Taniwaki