Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

Abstract: An organic EL display panel includes light-reflective electrodes, a first red light-emitting layer, a green light-emitting layer, a first blue light-emitting layer, a second red light-emitting layer, a charge generating layer, a second blue light-emitting layer, and a light-transmissive electrode. In a red and a white sub-pixel region, a first optical length is from 20 nm to 50 nm, and a second optical length is from 210 nm to 230 nm. In a green sub-pixel region, the first optical length is from 20 nm to 50 nm, and the second optical length is from 240 nm to 295 nm. In a blue sub-pixel region, the first optical length is from 20 nm to 60 nm, and the second optical length is from 195 nm to 205 nm.

Abstract: An organic EL display panel that includes light-reflective electrodes, a red light-emitting layer, a green light-emitting layer, a first blue light-emitting layer, a charge generating layer, a second blue light-emitting layer, and a light-transmissive electrode. In a red sub-pixel region, a first optical length is from 20 nm to 50 nm, and a second optical length is from 210 nm to 230 nm. In a green sub-pixel region, the first optical length is from 20 nm to 50 nm, and the second optical length is from 240 nm to 295 nm. In a blue sub-pixel region, the first optical length is from 20 nm to 60 nm, and the second optical length is from 195 nm to 205 nm.

Abstract: An organic light-emitting device including: a substrate; an anode above the substrate; wiring above the substrate, spaced away from the anode in a direction parallel to a main surface of the substrate; a light-emitting layer above the anode, containing an organic light-emitting material; an intermediate layer on the light-emitting layer and the wiring, continuous over the light-emitting layer and the wiring and containing a fluoride of a first metal which is an alkali metal or an alkaline earth metal; an organic functional layer on the intermediate layer, continuous over the light-emitting layer and the wiring and made of an organic material having an electron transporting property or an electron injection property and doped with a second metal having a property of cleaving a bond between the first metal and fluorine in the fluoride; and a cathode on the organic functional layer, continuous over the light-emitting layer and the wiring.

Abstract: A sense circuit includes a differential amplifier circuit including an inverting input section, a non-inverting input section and an output section, an electrical capacitor connected between the inverting input section and the output section, and a field effect transistor including a source, a drain, and a gate. One of the source and the drain is connected to the inverting input section, and the other of the source and the drain is connected to the output section. A reference potential is supplied to the non-inverting input section, and an output section of a photoelectric conversion cell having an added switching function is connected to the inverting input section.

Abstract: An organic light-emitting device includes: an anode; a wiring that is disposed side-by-side with and spaced from the anode; a light-emitting layer that is disposed above the anode, and includes an organic light-emitting material; an intermediate layer that is disposed above the light-emitting layer and the wiring; an organic functional layer that is disposed above the intermediate layer, and has an electron injection property or an electron transport property; a cathode that is disposed above the organic functional layer. The intermediate layer includes: a fluoride of a first metal, the first metal being an alkali metal or an alkaline-earth metal; and a second metal that has a property of cleaving a bond between the first metal and fluorine in the fluoride.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.

Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Abstract: A photoelectric conversion device includes a first output line, a second output line; and a photoelectric conversion cell. The photoelectric conversion cell further includes, a photoelectric conversion element configured to generate an output current corresponding to an intensity of incident light, a first switch element configured to transmit the first output current to the first output line according to a first control signal, and a second switch element configured to transmit the second output current to second output line according to a second control signal. As a result, the photoelectric conversion device can be provided to generate rapidly the image data with wide dynamic range without the need for complex control outside of the photoelectric conversion device.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Abstract: A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.

Abstract: An organic light-emitting device includes: an anode; a wiring that is disposed side-by-side with and spaced from the anode; a light-emitting layer that is disposed above the anode, and includes an organic light-emitting material; an intermediate layer that is disposed above the light-emitting layer and the wiring; an organic functional layer that is disposed above the intermediate layer, and has an electron injection property or an electron transport property; a cathode that is disposed above the organic functional layer. The intermediate layer includes: a fluoride of a first metal, the first metal being an alkali metal or an alkaline-earth metal; and a second metal that has a property of cleaving a bond between the first metal and fluorine in the fluoride.

Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

Abstract: An organic EL element includes: an anode; a light-emitting layer that is disposed above the anode; a first interlayer that is disposed on the light-emitting layer; a second interlayer that is disposed on the first interlayer; a functional layer that is disposed on the second interlayer; and a cathode that is disposed above the functional layer. The first interlayer includes a fluorine compound including a first metal that is an alkali metal or an alkaline-earth metal. The second interlayer includes a second metal that has a property of cleaving a bond between the first metal and fluorine in the fluorine compound. The functional layer has at least one of an electron transport property and an electron injection property. A thickness D1 of the first interlayer and a thickness D2 of the second interlayer satisfy 3%?D2/D1?25%.

Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.

Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.

Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Abstract: Provided is a method of varying the gain of an amplifying photoelectric conversion device and a variable gain photoelectric conversion device which are capable of achieving both signal processing under low illuminance and high-current processing under high light intensity, and thereby capable of securing a wide dynamic range. An amplifying photoelectric conversion part includes a photoelectric conversion element and amplification transistors forming a Darlington circuit. The sources and the drains of field-effect transistors are connected to the bases and the emitters of the amplification transistors, respectively. The gates of the field-effect transistors each function as a gain control part.