Abstract: There is provided a technique that include: a process chamber configured to process a substrate at which at least one target film and a heat assist film are formed; and an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber, wherein when the substrate is irradiated with the electromagnetic wave, the heat assist film generates heat and the at least one target film is modified by the heat.

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Abstract: A substrate processing technique includes: a first heating device configured to heat a substrate to a first processing temperature; a first process chamber provided with the first heating device; a second heating device configured to heat the substrate to a second processing temperature utilizing microwaves, the second processing temperature being higher than the first processing temperature; a second process chamber provided with the second heating device; a substrate placement portion configured to load and unload the substrate with respect to the first process chamber and the second process chamber by placing and rotating the substrate; and a controller configured to respectively control the first heating device, the second heating device, and the substrate placement portion.

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Abstract: There is provide a technique that includes preparing a substrate, in which an insulating film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 ? or smaller is formed on the insulating film, in a process chamber; raising a temperature of the substrate to a first temperature with an electromagnetic wave; crystallizing the process target film for a first process time period while maintaining the first temperature; raising the temperature of the substrate to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the act of crystallizing the process target film; and repairing a crystal defect of the crystallized process target film for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.

Abstract: A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-cont

Abstract: A substrate processing technique includes: a first heating device configured to heat a substrate to a first processing temperature; a first process chamber provided with the first heating device; a second heating device configured to heat the substrate to a second processing temperature utilizing microwaves, the second processing temperature being higher than the first processing temperature; a second process chamber provided with the second heating device; a substrate placement portion configured to load and unload the substrate with respect to the first process chamber and the second process chamber by placing and rotating the substrate; and a controller configured to respectively control the first heating device, the second heating device, and the substrate placement portion.

Abstract: There is provide a technique that includes preparing a substrate, in which an insulating film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 ? or smaller is formed on the insulating film, in a process chamber; raising a temperature of the substrate to a first temperature with an electromagnetic wave; crystallizing the process target film for a first process time period while maintaining the first temperature; raising the temperature of the substrate to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the act of crystallizing the process target film; and repairing a crystal defect of the crystallized process target film for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.

Abstract: There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

Abstract: A method of manufacturing a semiconductor device includes carrying a substrate into a process container, forming a thin film on the substrate by supplying a source gas into the process container with the substrate accommodated therein, performing a first modification treatment to a byproduct adhered to an inside of the process container by supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under a pressure less than an atmospheric pressure, while accommodating the thin film-formed substrate in the process container, carrying the thin film-formed substrate out of the process container, and performing a second modification treatment to the byproduct adhered to the inside of the process container after the first modification treatment by supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under the pressure less than the atmospheric pressure, while not accommodating the substrate in the process container.

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

Abstract: A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-cont

Abstract: A method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas.

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

Abstract: A semiconductor manufacturing method includes forming an oxide film on a substrate by performing a first cycle a predetermined number of times, including supplying a first source gas, an oxidizing gas and a reducing gas to the substrate heated to a first temperature in a process container under a sub-atmospheric pressure; forming a seed layer on a surface of the oxide film by supplying a nitriding gas to the substrate in the process container, the substrate being heated to a temperature equal to or higher than the first temperature and equal to or lower than a second temperature; and forming a nitride film on the seed layer formed on the surface of the oxide film by performing a second cycle a predetermined number of times, including supplying a second source gas and the nitriding gas to the substrate heated to the second temperature in the process container.

Abstract: A specimen measurement system simplifies the function of a measurement device and facilitates measurement under an appropriate condition. Use is made of a specimen measurement device suitable for the system. The specimen measurement device includes a measurement unit, a measurement condition decision unit, and a communication unit. The measurement unit measures a specific component contained in the specimen. The measurement condition decision unit decides suitability of measurement conditions necessary for the measurement, and generates measurement condition data including decision result about the suitability of the measurement conditions. The communication unit transmits the measurement condition data through wireless communication.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: carrying a substrate, which has a Ge-containing film on at least a portion of a surface thereof, into a process chamber; heating an inside of the process chamber, into which the substrate is carried, to a first process temperature; and terminating a surface of the Ge-containing film, which is exposed at a portion of the surface of the substrate, by Si by supplying at least a Si-containing gas to the inside of the process chamber heated to the first process temperature.

Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas.