Patents by Inventor Kazuhisa Ishibashi

Kazuhisa Ishibashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11823863
    Abstract: An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.
    Type: Grant
    Filed: October 25, 2022
    Date of Patent: November 21, 2023
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO, LTD.
    Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
  • Patent number: 11728132
    Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: August 15, 2023
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Mikio Yamaguchi, Kazuhisa Ishibashi, Tetsuya Kudo
  • Publication number: 20230140499
    Abstract: An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.
    Type: Application
    Filed: October 26, 2022
    Publication date: May 4, 2023
    Inventors: Kazuhisa Ishibashi, Toshio Yumiyama
  • Patent number: 11603590
    Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.
    Type: Grant
    Filed: August 7, 2020
    Date of Patent: March 14, 2023
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventor: Kazuhisa Ishibashi
  • Publication number: 20230038439
    Abstract: An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.
    Type: Application
    Filed: October 25, 2022
    Publication date: February 9, 2023
    Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
  • Patent number: 11527381
    Abstract: There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: December 13, 2022
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
  • Publication number: 20220254602
    Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.
    Type: Application
    Filed: February 8, 2022
    Publication date: August 11, 2022
    Inventors: Mikio YAMAGUCHI, Kazuhisa ISHIBASHI, Tetsuya KUDO
  • Patent number: 11145488
    Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.
    Type: Grant
    Filed: August 7, 2020
    Date of Patent: October 12, 2021
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventor: Kazuhisa Ishibashi
  • Publication number: 20210280388
    Abstract: There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.
    Type: Application
    Filed: March 3, 2021
    Publication date: September 9, 2021
    Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
  • Publication number: 20210043421
    Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.
    Type: Application
    Filed: August 7, 2020
    Publication date: February 11, 2021
    Inventor: Kazuhisa Ishibashi
  • Publication number: 20210040604
    Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.
    Type: Application
    Filed: August 7, 2020
    Publication date: February 11, 2021
    Inventor: Kazuhisa Ishibashi
  • Patent number: 10403472
    Abstract: An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: September 3, 2019
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventor: Kazuhisa Ishibashi
  • Patent number: 10217607
    Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: February 26, 2019
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
  • Publication number: 20180068829
    Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.
    Type: Application
    Filed: September 5, 2017
    Publication date: March 8, 2018
    Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
  • Publication number: 20170271127
    Abstract: An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.
    Type: Application
    Filed: March 16, 2017
    Publication date: September 21, 2017
    Inventor: Kazuhisa Ishibashi
  • Patent number: 5833865
    Abstract: The slurry subjected to aggregation processing by a line mixer is supplied to a slurry feed member via a slurry supply passage and then fed radially outward from slurry fed outlets within a sedimentation tank. Therefore, liquid flow hardly takes place below the slurry feed member and the settling velocity of the solid is increased. The slurry feed member is arranged close to the boundary face of the thickened slurry zone, and thus the settling distance of the solid is shortened. Accordingly, the residence time of the solid is shortened to a great extent. In addition, the sedimentation tank can be constructed to be sealed and solid-liquid separation can be also performed under the pressurized state.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: November 10, 1998
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Takuo Harato, Yoshio Kumagae, Kazuhisa Ishibashi
  • Patent number: 5545384
    Abstract: A process for the production of aluminum hydroxide from an alumina-containing ore comprising, in a process for the production of aluminum hydroxide involving extraction of alumina from an alumina-containing ore by an aqueous alkaline solution, supplying a slurry containing the alumina-containing ore at a high solid content which is prepared from a small amount of an alkaline solution together with an aqueous alkaline solution which is so preheated to a temperature that a preheated temperature is enough high to have a temperature after the mixing with the slurry which is higher than an extraction temperature of alumina, simultaneously or after the mixing them, to an extraction apparatus comprising of a tube reactor, extracting alumina from the alumina-containing ore under extraction conditions of a temperature of 120.degree.-160.degree. C.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: August 13, 1996
    Assignee: Sumitomo Chemical Co., Ltd.
    Inventors: Takuo Harato, Takahiro Ishida, Yoshio Kumagae, Michikazu Inami, Kazuhisa Ishibashi, Mitsuaki Murakami
  • Patent number: 5180893
    Abstract: This invention relates to a heating method for forming a thermoplastic bottle in which a heating member is inserted into the interior from a preform made of a thermoplastic material or the bottle and the preform or plastic bottle is heated by the heating member and a heating device located externally so as to thereby heat the same simultaneously internally and externally thereof, the temperature of the respective heating member being controlled respectively. Radiant heat energy distribution is variable along the longitudinal direction of the heating member so as to carry out the heating process in conformity with the bottle to be formed so as to manufacture the plastic bottle with high quality.
    Type: Grant
    Filed: November 2, 1990
    Date of Patent: January 19, 1993
    Assignee: Toyo Seikan Kaisha Ltd.
    Inventors: Ikuo Sugiyama, Kazuhisa Ishibashi, Nobuyuki Takakusaki, Yoshitsugu Maruhashi, Yasushi Nishimura, Hiroshi Koyama, Setsuko Iida, Koji Sato
  • Patent number: 5065183
    Abstract: A multicolor printing method for printing multicolor picture images upon a material or object to be printed comprises the steps of, in accordance with a first embodiment of the invention, the formation of a multicolor toner image upon a flexible belt by means of electrophotographic printing methods or techniques, and the transfer of such multicolor toner image directly to the material or object to be printed, such as, for example, a container made of, for example, metal, paper, plastic, glass, or the like, by means of a thermo-transferring process. In accordance with a second embodiment of the invention, the multicolor toner image is formed upon a plastic film, which is laminated upon the flexible belt, by means of electrophotographic printing methods or techniques, and the plastic film is then transerred to and fused upon the container.
    Type: Grant
    Filed: June 2, 1989
    Date of Patent: November 12, 1991
    Assignee: Toyo Seikan Kaisha, Ltd.
    Inventors: Akihiko Morofuji, Masaki Morotomi, Akihiko Machii, Masanori Aizawa, Kazuhisa Ishibashi
  • Patent number: 5032700
    Abstract: This invention relates to a heating method for forming a thermoplastic bottle in which a heating member is inserted into the interior of a preform made from a thermoplastic material or the bottle and the preform or plastic bottle is heated by the heating member and a heating device located externally so as to thereby heat the same simultaneously internally and externally thereof, the temperature of the respective heating member being controlled respectively. Radiant heat energy distribution is variable along the longitudinal direction of the heating member so as to carry out the heating process in comformity with the bottle to be formed so as to manufacture the plastic bottle with high quality.
    Type: Grant
    Filed: February 7, 1989
    Date of Patent: July 16, 1991
    Assignee: Toyo Seikan Kaisha, Ltd.
    Inventors: Ikuo Sugiyama, Kazuhisa Ishibashi, Nobuyuki Takakusaki, Yoshitsugu Maruhashi, Yasushi Nishimura, Hiroshi Koyama, Setsuko Iida, Koji Sato