Patents by Inventor Kazuhisa Ishibashi
Kazuhisa Ishibashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11823863Abstract: An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.Type: GrantFiled: October 25, 2022Date of Patent: November 21, 2023Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO, LTD.Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
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Patent number: 11728132Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.Type: GrantFiled: February 8, 2022Date of Patent: August 15, 2023Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventors: Mikio Yamaguchi, Kazuhisa Ishibashi, Tetsuya Kudo
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Publication number: 20230140499Abstract: An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.Type: ApplicationFiled: October 26, 2022Publication date: May 4, 2023Inventors: Kazuhisa Ishibashi, Toshio Yumiyama
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Patent number: 11603590Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.Type: GrantFiled: August 7, 2020Date of Patent: March 14, 2023Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventor: Kazuhisa Ishibashi
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Publication number: 20230038439Abstract: An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.Type: ApplicationFiled: October 25, 2022Publication date: February 9, 2023Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
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Patent number: 11527381Abstract: There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.Type: GrantFiled: March 3, 2021Date of Patent: December 13, 2022Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
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Publication number: 20220254602Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.Type: ApplicationFiled: February 8, 2022Publication date: August 11, 2022Inventors: Mikio YAMAGUCHI, Kazuhisa ISHIBASHI, Tetsuya KUDO
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Patent number: 11145488Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.Type: GrantFiled: August 7, 2020Date of Patent: October 12, 2021Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventor: Kazuhisa Ishibashi
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Publication number: 20210280388Abstract: There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.Type: ApplicationFiled: March 3, 2021Publication date: September 9, 2021Inventors: Kazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
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Publication number: 20210043421Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.Type: ApplicationFiled: August 7, 2020Publication date: February 11, 2021Inventor: Kazuhisa Ishibashi
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Publication number: 20210040604Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.Type: ApplicationFiled: August 7, 2020Publication date: February 11, 2021Inventor: Kazuhisa Ishibashi
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Patent number: 10403472Abstract: An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.Type: GrantFiled: March 16, 2017Date of Patent: September 3, 2019Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventor: Kazuhisa Ishibashi
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Patent number: 10217607Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.Type: GrantFiled: September 5, 2017Date of Patent: February 26, 2019Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
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Publication number: 20180068829Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.Type: ApplicationFiled: September 5, 2017Publication date: March 8, 2018Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
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Publication number: 20170271127Abstract: An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.Type: ApplicationFiled: March 16, 2017Publication date: September 21, 2017Inventor: Kazuhisa Ishibashi
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Patent number: 5833865Abstract: The slurry subjected to aggregation processing by a line mixer is supplied to a slurry feed member via a slurry supply passage and then fed radially outward from slurry fed outlets within a sedimentation tank. Therefore, liquid flow hardly takes place below the slurry feed member and the settling velocity of the solid is increased. The slurry feed member is arranged close to the boundary face of the thickened slurry zone, and thus the settling distance of the solid is shortened. Accordingly, the residence time of the solid is shortened to a great extent. In addition, the sedimentation tank can be constructed to be sealed and solid-liquid separation can be also performed under the pressurized state.Type: GrantFiled: March 17, 1997Date of Patent: November 10, 1998Assignee: Sumitomo Chemical Company, LimitedInventors: Takuo Harato, Yoshio Kumagae, Kazuhisa Ishibashi
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Patent number: 5545384Abstract: A process for the production of aluminum hydroxide from an alumina-containing ore comprising, in a process for the production of aluminum hydroxide involving extraction of alumina from an alumina-containing ore by an aqueous alkaline solution, supplying a slurry containing the alumina-containing ore at a high solid content which is prepared from a small amount of an alkaline solution together with an aqueous alkaline solution which is so preheated to a temperature that a preheated temperature is enough high to have a temperature after the mixing with the slurry which is higher than an extraction temperature of alumina, simultaneously or after the mixing them, to an extraction apparatus comprising of a tube reactor, extracting alumina from the alumina-containing ore under extraction conditions of a temperature of 120.degree.-160.degree. C.Type: GrantFiled: June 5, 1995Date of Patent: August 13, 1996Assignee: Sumitomo Chemical Co., Ltd.Inventors: Takuo Harato, Takahiro Ishida, Yoshio Kumagae, Michikazu Inami, Kazuhisa Ishibashi, Mitsuaki Murakami
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Patent number: 5180893Abstract: This invention relates to a heating method for forming a thermoplastic bottle in which a heating member is inserted into the interior from a preform made of a thermoplastic material or the bottle and the preform or plastic bottle is heated by the heating member and a heating device located externally so as to thereby heat the same simultaneously internally and externally thereof, the temperature of the respective heating member being controlled respectively. Radiant heat energy distribution is variable along the longitudinal direction of the heating member so as to carry out the heating process in conformity with the bottle to be formed so as to manufacture the plastic bottle with high quality.Type: GrantFiled: November 2, 1990Date of Patent: January 19, 1993Assignee: Toyo Seikan Kaisha Ltd.Inventors: Ikuo Sugiyama, Kazuhisa Ishibashi, Nobuyuki Takakusaki, Yoshitsugu Maruhashi, Yasushi Nishimura, Hiroshi Koyama, Setsuko Iida, Koji Sato
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Patent number: 5065183Abstract: A multicolor printing method for printing multicolor picture images upon a material or object to be printed comprises the steps of, in accordance with a first embodiment of the invention, the formation of a multicolor toner image upon a flexible belt by means of electrophotographic printing methods or techniques, and the transfer of such multicolor toner image directly to the material or object to be printed, such as, for example, a container made of, for example, metal, paper, plastic, glass, or the like, by means of a thermo-transferring process. In accordance with a second embodiment of the invention, the multicolor toner image is formed upon a plastic film, which is laminated upon the flexible belt, by means of electrophotographic printing methods or techniques, and the plastic film is then transerred to and fused upon the container.Type: GrantFiled: June 2, 1989Date of Patent: November 12, 1991Assignee: Toyo Seikan Kaisha, Ltd.Inventors: Akihiko Morofuji, Masaki Morotomi, Akihiko Machii, Masanori Aizawa, Kazuhisa Ishibashi
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Patent number: 5032700Abstract: This invention relates to a heating method for forming a thermoplastic bottle in which a heating member is inserted into the interior of a preform made from a thermoplastic material or the bottle and the preform or plastic bottle is heated by the heating member and a heating device located externally so as to thereby heat the same simultaneously internally and externally thereof, the temperature of the respective heating member being controlled respectively. Radiant heat energy distribution is variable along the longitudinal direction of the heating member so as to carry out the heating process in comformity with the bottle to be formed so as to manufacture the plastic bottle with high quality.Type: GrantFiled: February 7, 1989Date of Patent: July 16, 1991Assignee: Toyo Seikan Kaisha, Ltd.Inventors: Ikuo Sugiyama, Kazuhisa Ishibashi, Nobuyuki Takakusaki, Yoshitsugu Maruhashi, Yasushi Nishimura, Hiroshi Koyama, Setsuko Iida, Koji Sato