Abstract: A laser processing method includes providing a unit configured to obtain time t0 from a time when the high-frequency pulse RF output is turned on to a time when the laser is actually output in advance and change a traveling direction of the laser in an optical path of the laser, irradiating the workpiece with all the lasers while the high-frequency pulse RF output is turned on, and removing at least a part of the laser from the workpiece simultaneous with turning off the high-frequency pulse RF output.

Abstract: In a method for manufacturing a light control panel, a large number of strip-shaped reflective surfaces are formed with a constant pitch in a direction that is perpendicular to a thickness direction of the light control panel. The method includes a stacking step of directly stacking a large number of elongated flat plate-shaped glass pieces one on top of another without interposing an adhesive between the glass pieces, thereby producing a glass stack, which has a flat plate-like shape and in which the large number of glass pieces are lined up in a direction that is perpendicular to a thickness direction of the glass stack; and an integrating step of integrating the large number of Mass pieces of the glass stack. Pieces of transparent glass with no reflective films for forming the strip-shaped reflective surfaces being stacked thereon are used as the glass pieces.

Abstract: A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.

Abstract: A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CH2F2, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CH3F, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.

Abstract: A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CH2F2, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CH3F, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.

Abstract: A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.

Abstract: An apparatus for machining a thin-film layer of a workpiece, which is a transparent glass on which a thin-film layer is disposed on a top surface thereof, includes a workpiece-underside support mechanism for supporting the workpiece in a vertical direction by an air floatation mechanism and a suction mechanism, a clamp device for gripping the workpiece so as to follow the movement in the vertical direction of the workpiece, and a machining head for machining the thin-film layer with a laser beam. The machining head machines the thin-film layer on the top surface of the workpiece by irradiating the workpiece with a laser beam entering through the underside of the workpiece. Further including nozzles, the thin-film layer is machined while the cooling medium is delivered from the nozzles disposed by the thin-film layer side.

Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.

Abstract: A laser machining apparatus that excels in precision in terms of machining position and shape is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam. The laser machining apparatus also includes an optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.

Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and contributes toward an improvement in production efficiency. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the substrate by use of lithography process, and that the composition is coated on the substrate prior to coating of the photoresist, and comprises a polymer having a hydroxy group or a carboxy group and a crosslinking agent. The gap fill material layer obtained from the gap fill material forming composition can be etched back with an alkaline aqueous solution.

Abstract: A composite sheet whose product price can be reduced with a smaller number of manufacturing processes. A laser oscillator outputs a pulsed beam at a frequency f. A mask shapes the outer shape of the beam into a triangular, quadrangular or hexagonal shape. N pieces of time-sharing means time-share the beam to form N beams having a frequency f/N. N pairs of positioning means position the time-shared beams. A condensing lens condenses the beams. A rotating drum displaces a workpiece. A control means controls the time-sharing means, the N pairs of positioning means and a pedestal. The N pairs of positioning means are positioned to irradiate predetermined positions with the beams. The pedestal is moved. The time-sharing means are thereupon operated in predetermined order. The workpiece is machined to make holes whose outer shapes depend on the mask so that distances between sides of adjacent holes are equal to one another.

Abstract: A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.

Abstract: The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

Abstract: There is provided a laser drilling method that prevents hanging, expansion, or crinkles of copper foil caused when an ultraviolet laser beam that requires no surface roughening is used for a thin double-sided copper-clad film. The drilling method of the copper-clad film comprises the steps of: using an ultraviolet laser as a laser beam; drilling after bonding a resin film to the backside of the film which is the opposite side to the laser-beam-incidence; and delaminating the resin film on the backside after drilling. The resin film bonded to the backside prevents the copper foil from hanging, thus allowing the laser beam to be efficiently applied to the copper foil, and allowing the copper foil to be completely removed by ablation. In the case of a blind hole, the resin film bonded to the backside prevents expansion of the copper foil. Crinkles can be also prevented.

Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.

Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and contributes toward an improvement in production efficiency. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the substrate by use of lithography process, and that the composition is coated on the substrate prior to coating of the photoresist, and comprises a polymer having a hydroxy group or a carboxy group and a crosslinking agent. The gap fill material layer obtained from the gap fill material forming composition can be etched back with an alkaline aqueous solution.

Abstract: There is provided a laser machining apparatus that excels in precision in terms of machining position and shape. The laser machining apparatus is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam; and optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.

Abstract: A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.

Abstract: The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

Abstract: The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.