Abstract: A component built-in board comprises stacked therein a plurality of printed wiring bases having a wiring pattern and a via formed on/in a resin base thereof, and comprises an electronic component built in thereto, wherein at least a portion of the plurality of printed wiring bases include a thermal wiring in the wiring pattern and include a thermal via in the via, at least one of the plurality of printed wiring bases has formed therein an opening where the electronic component is built, and has formed therein a heat-conducting layer and closely attached to a surface on an opposite side to an electrode formation surface of the electronic component built in to the opening, and the electronic component is fixed in the opening by an adhesive layer stacked on the heat-conducting layer, via a hole formed in a region facing onto the opening of the heat-conducting layer.

Abstract: A semiconductor integrated circuit includes a clock-signal control circuit controlling intensity-signal output, which is output from a signal processing circuit, to be stopped in at least a forward outage time and a backward outage time. The forward outage time is previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period. The backward outage time is subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.

Abstract: A component built-in board comprises stacked therein a plurality of printed wiring bases having a wiring pattern and a via formed on/in a resin base thereof, and comprises an electronic component built in thereto, wherein at least a portion of the plurality of printed wiring bases include a thermal wiring in the wiring pattern and include a thermal via in the via, at least one of the plurality of printed wiring bases has formed therein an opening where the electronic component is built, and has formed therein a heat-conducting layer and closely attached to a surface on an opposite side to an electrode formation surface of the electronic component built in to the opening, and the electronic component is fixed in the opening by an adhesive layer stacked on the heat-conducting layer, via a hole formed in a region facing onto the opening of the heat-conducting layer.

Abstract: A magnetic device comprises a magnetic element, a first magnetic field application device, and a second magnetic field application device. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field application device create a magnetic field in one direction from the first magnetic field application device toward the second magnetic field application device. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field application device.

Abstract: A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

Abstract: A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

Abstract: A magnetic sensor module which includes: a semiconductor substrate including an integrated circuit for switching operation; a magneto-resistive element which is disposed on a first surface of the semiconductor substrate and has a magneto-sensitive direction in a direction along the first surface; and a bias magnetic field applying member provided on the semiconductor substrate and disposed on a surface which is parallel to the first surface, wherein: the bias magnetic field applying member is magnetized in a direction along the surface on which the bias magnetic field applying member is disposed; and when no external magnetic field is applied, the bias magnetic field applying member applies a bias magnetic field in the direction along the first surface on which the magneto-resistive element is provided.

Abstract: A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

Abstract: A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulatin

Abstract: A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulatin

Abstract: A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulatin