Abstract: The overflow of a brazing material (19) from a die pad (11) is prevented by forming a second plating film (14B) on the surface of the die pad (11). The second plating film (14B) is provided around the surface of the die pad 11 so as to enclose an area where a semiconductor element (13) is mounted. In a step of mounting the semiconductor element (13) on the die pad (11) with the brazing material (19), the brazing material (19) overflows from the first plating film (14A) when the semiconductor element (13) is mounted on the upper part of the molten brazing material. However, the second plating film (14B) functions as a blocking area by which the overflow of the brazing material is prevented. Therefore, a short circuit can be prevented from arising between the die pad (11) and the bonding pad (12) because of the brazing material that has spread.

Abstract: The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire. These semiconductor devices have a plurality of circuit elements as one package, so that the mounting operation on the mounting board can be significantly reduced.

Abstract: The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire.

Abstract: The overflow of a brazing material (19) from a die pad (11) is prevented by forming a second plating film (14B) on the surface of the die pad (11). The second plating film (14B) is provided around the surface of the die pad 11 so as to enclose an area where a semiconductor element (13) is mounted. In a step of mounting the semiconductor element (13) on the die pad (11) with the brazing material (19), the brazing material (19) overflows from the first plating film (14A) when the semiconductor element (13) is mounted on the upper part of the molten brazing material. However, the second plating film (14B) functions as a blocking area by which the overflow of the brazing material is prevented. Therefore, a short circuit can be prevented from arising between the die pad (11) and the bonding pad (12) because of the brazing material that has spread.

Abstract: The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire. These semiconductor devices have a plurality of circuit elements as one package, so that the mounting operation on the mounting board can be significantly reduced.

Abstract: The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire.