Abstract: A semiconductor device having a bonding pad, includes an alumina layer formed on a surface of the bonding pad before bonding a bonding wire to the bonding pad to prevent the surface of the bonding pad from degenerating during storage while awaiting the bonding step. A method of manufacturing a semiconductor device with such a bonding pad includes the steps of: forming an inter-layer insulating film, an aluminum layer, and a passivation film successively on a semiconductor substrate; forming a photosensitive resin film on the passivation film; opening a bonding pad by exposing a part of the aluminum layer with photolithographic etching using a fluorine gas etching; and baking the device in a water vapor atmosphere at a predetermined temperature and baking time to form the alumina layer.

Abstract: A solid state image pickup device is fabricated on a semiconductor substrate and comprises a well formed in a surface portion of the semiconductor substrate, photo-electric converting regions arranged in rows and columns and converting parts on an optical radiation into electric charges, respectively, charge transferring regions associated with the columns of the photo-electric converting regions, respectively, and conveying the electric charges, charge transferring electrodes provided over the charge transferring regions and allowing the charge transferring regions to convey the electric charges, and a metallic photo-shield plate preventing the charge transferring regions each being contiguous to the channel forming region from the optical radiation and exposing the photo-electric converting regions to the parts of the optical radiation, in which the metallic photo-shield plate is in contact with the photo-electric converting regions for forming Schottky barriers therebetween and excess electric charges flow