Patents by Inventor Kazuhisa Nakashita
Kazuhisa Nakashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070141859Abstract: A laser processing process which comprises laser annealing a silicon film 2 ?m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.Type: ApplicationFiled: February 14, 2007Publication date: June 21, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroaki Ishihara, Kazuhisa Nakashita, Hideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
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Patent number: 6638800Abstract: A laser processing process which comprises laser annealing a silicon film 2 &mgr;m or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.Type: GrantFiled: October 1, 1999Date of Patent: October 28, 2003Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroaki Ishihara, Kazuhisa Nakashita, Hideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
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Patent number: 5891764Abstract: A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.Type: GrantFiled: October 30, 1996Date of Patent: April 6, 1999Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroaki Ishihara, Kazuhisa Nakashita, Hideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
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Patent number: 5643801Abstract: A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.Type: GrantFiled: August 4, 1995Date of Patent: July 1, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroaki Ishihara, Kazuhisa Nakashita, Hideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
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Patent number: 5283087Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: April 6, 1992Date of Patent: February 1, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 5256483Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: October 31, 1990Date of Patent: October 26, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 5079031Abstract: An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.Type: GrantFiled: March 17, 1989Date of Patent: January 7, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Imatou, Noriya Ishida, Mari Sasaki, Mitsunori Sakama, Takeshi Fukada, Naoki Hirose, Mitsunori Tsuchiya, Atsushi Kawano, Kazuhisa Nakashita, Junichi Takeyama, Toshiji Hamatani
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Patent number: 5013688Abstract: An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.Type: GrantFiled: July 26, 1989Date of Patent: May 7, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunepi Yamazaki, Kazuo Urata, Itaru Koyama, Noriya Ishida, Mari Sasaki, Shinji Imatou, Kazuhisa Nakashita, Naoki Hirose
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Patent number: 4987004Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: May 11, 1990Date of Patent: January 22, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 4971667Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: February 3, 1989Date of Patent: November 20, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou