Abstract: This specification discloses a method of aligning a mask and a wafer for manufacturing semiconductor circuit elements into a predetermined positional relationship. The method comprises two steps. In a first step, the mask and wafer are aligned by the use of relatively large alignment marks provided on the mask and wafer. In a second step, the mask and wafer are aligned by using relatively small key patterns provided on the mask and wafer and having substantially no positional deviation with respect to actual element (circuit) patterns.

Abstract: An exposure method for exposing to a pattern a photosensitive material formed over a substrate having a reflective surface uses a light source having beam components of different wavelengths. The beam from the light source is used to project an exposure pattern upon the photosensitive material through a predetermined mask pattern to thereby form a combined standing wave pattern with the aid of the light beam incident on the photosensitive material and the light beam reflected by the reflective surface. The photosensitive material is disposed in the reduced peak value region of the combined standing wave pattern as the result of the interposition of a transparent layer between the reflecting surface and the photosensitive layer. Thus, the photosensitive material is pattern-exposed to a substantially uniform sensitizing energy.

Abstract: An exposure method for exposing to a pattern a photosensitive material formed over a substrate having a reflective surface uses a light source having beam components of different wavelengths. The beam from the light source is used to project an exposure pattern upon the photosensitive material through a predetermined mask pattern to thereby form a combined standing wave pattern with the aid of the light beam incident on the photosensitive material and the light beam reflected by the reflective surface. The photosensitive material is disposed in the reduced peak value region of the combined standing wave pattern as the result of the interposition of a transparent layer between the reflecting surface and the photosensitive layer. Thus, the photosensitive material is pattern-exposed to a substantially uniform sensitizing energy.