Abstract: An oxygen scavenger composition contains a mixed granule of a composition containing a water retention agent, a swelling agent, a metal halide, water, an iron and an alkaline substance, wherein the alkaline substance contains at least one selected from the group consisting of hydroxides of alkali metals, hydroxides of alkaline earth metals and salts composed of a weak acid and a strong base.

Abstract: This embodiment relates to a transmitter and the like that prevent an increase of the number of cables of an external interface even when the types of signals to be transmitted increase. The transmitter includes a latch circuit, an encoder, a serializer, and a selector. The latch circuit keeps a level of each of a plurality of signals at the timing specified by a sampling clock, and then, outputs the plurality of signals as a parallel data signal. The encoder generates an encoded parallel data signal based on the parallel data signal from the latch circuit. The serializer generates a serial data signal based on the encoded parallel data signal from the encoder. The sampling clock has a frequency higher than a transmission rate of the fastest signal of the plurality of signals.

Abstract: This embodiment relates to a transmitter and the like that prevent an increase of the number of cables of an external interface even when the types of signals to be transmitted increase. The transmitter includes a latch circuit, an encoder, a serializer, and a selector. The latch circuit keeps a level of each of a plurality of signals at the timing specified by a sampling clock, and then, outputs the plurality of signals as a parallel data signal. The encoder generates an encoded parallel data signal based on the parallel data signal from the latch circuit. The serializer generates a serial data signal based on the encoded parallel data signal from the encoder. The sampling clock has a frequency higher than a transmission rate of the fastest signal of the plurality of signals.

Abstract: A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive layer and has a first opening which reaches the surface of the first conductive layer. A second insulating film is formed on the first insulating film and has a second opening at the same position as the first opening. The contact plug is filled in the first and second openings and has the surface which is substantially flush with the surface of the second insulating film and also contains a metal having a high melting point. The second conductive layer is formed on the second insulating film and on the contact plug.

Abstract: A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive layer and has a first opening which reaches the surface of the first conductive layer. A second insulating film is formed on the first insulating film and has a second opening at the same position as the first opening. The contact plug is filled in the first and second openings and has the surface which is substantially flush with the surface of the second insulating film and also contains a metal having a high melting point. The second conductive layer is formed on the second insulating film and on the contact plug.

Abstract: A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive layer and has a first opening which reaches the surface of the first conductive layer. A second insulating film is formed on the first insulating film and has a second opening at the same position as the first opening. The contact plug is filled in the first and second openings and has the surface which is substantially flush with the surface of the second insulating film and also contains a metal having a high melting point. The second conductive layer is formed on the second insulating film and on the contact plug.

Abstract: On a traction machine motor wherein both a rotor (6) and a driving sheave (10) are attached on the rotating shaft (5), which is supported by both a motor bracket (1) and a bearing stand (2), and a motor frame (7) which supports the stator (8) is connected to the motor bracket (1), a gap (G.sub.5) is provided between a spigot joint (18) which is concentric with the rotating shaft (5) and an arcuate part (19) to indirectly measure a bias in the circumferential direction of the gap (G.sub.4).