Abstract: A diagnosis assistance apparatus includes: a learning model selection unit that selects a first learning model in accordance with a patient to be diagnosed, the first learning model indicating a relationship between waveforms of an electrocardiogram and a disease; an estimation unit that estimates, using the selected first learning model, a possibility of a disease of the patient to be diagnosed based on electrocardiogram data of the patient to be diagnosed; and a presentation unit that presents a result of the estimation and an evidence for the result of the estimation.

Abstract: Provided here are: a semiconductor laser section formed on a surface of a semiconductor substrate; a spot-size converter section in which an optical waveguide having a core layer for propagating laser light emitted from the semiconductor laser section is provided; and a monitor PD section which is provided on the spot-size converter section laterally with respect to a propagation direction of the laser light; wherein, the regions of a PD anode electrode and a PD cathode electrode in the monitor PD section are partially opposed to each other through an insulating film, so that the surge breakdown voltage of the monitor PD section is increased.

Abstract: A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

Abstract: A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GNU line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

Abstract: An optical modulation device includes a first optical modulator having a first capacitance, a second optical modulator having a second capacitance larger than the first capacitance, a first feed path having a first inductance and having one end connected to the first optical modulator, and a second feed path having a second inductance larger than the first inductance and having one end connected to the second optical modulator. In a graph having an abscissa axis of inductances and an ordinate axis of capacitance values, a predetermined range between a predetermined lower limit line and a predetermined upper limit line is set. The first capacitance, the first inductance, the second capacitance, and the second inductance are determined so that a first coordinate determined by the first capacitance and the first inductance and a second coordinate determined by the second capacitance and the second inductance are contained within the predetermined range.

Abstract: A flexible Peltier device in which emitting heat conversion properties between Peltier elements and an object transferring heat may be improved and a flexible heat-emitting sheet having the Peltier elements bonded thereto may be bent without worrying the separation there between. A flexible Peltier device includes a single or plural Peltier element which is disposed on one surface side of a heat-emitting sheet having flexibility made from heat-conductive rubber containing a heat conductive filler and each semiconductor element which has a heating side and a cooling side and composes the Peltier element at least one of the heating side and the cooling side is bonded integrally to the heat-emitting sheet by a direct covalent bond and/or by an indirect covalent bond through a molecular adhesive at active groups existing on each other surfaces.

Abstract: A diffraction grating pattern is formed in the first insulating film on the active layer by electron beam lithography, and at the same time an end facet formation pattern whose end portion corresponds to a position of an emission end facet of the optical modulator is formed in the first insulating film on the optical absorption layer by electron beam lithography. A second insulating film is formed on the end facet formation pattern. The diffraction grating formation layer is etched using the first and second insulating films as masks to form a diffraction grating, and is embedded with an embedded layer. The second insulating film is removed. A third insulating film is formed on the diffraction grating and the embedded layer not to cover the end facet formation pattern. The optical absorption layer is etched using the first and third insulating films as masks to form the emission end facet.

Abstract: A diffraction grating pattern is formed in the first insulating film on the active layer by electron beam lithography, and at the same time an end facet formation pattern whose end portion corresponds to a position of an emission end facet of the optical modulator is formed in the first insulating film on the optical absorption layer by electron beam lithography. A second insulating film is formed on the end facet formation pattern. The diffraction grating formation layer is etched using the first and second insulating films as masks to form a diffraction grating, and is embedded with an embedded layer. The second insulating film is removed. A third insulating film is formed on the diffraction grating and the embedded layer not to cover the end facet formation pattern. The optical absorption layer is etched using the first and third insulating films as masks to form the emission end facet.

Abstract: A flexible Peltier device in which emitting heat conversion properties between Peltier elements and an object transferring heat may be improved and a flexible heat-emitting sheet having the Peltier elements bonded thereto may be bent without worrying the separation there between. A flexible Peltier device includes a single or plural Peltier element which is disposed on one surface side of a heat-emitting sheet having flexibility made from heat-conductive rubber containing a heat conductive filler and each semiconductor element which has a heating side and a cooling side and composes the Peltier element at least one of the heating side and the cooling side is bonded integrally to the heat-emitting sheet by a direct covalent bond and/or by an indirect covalent bond through a molecular adhesive at active groups existing on each other surfaces.

Abstract: An optical module includes: a semiconductor laser emitting laser light; an optical device having a butt joint interface; an optical amplifier amplifying the laser light passed through the optical device; an equivalent resonator length adjustor inserted between the optical amplifier and the optical device; a wavelength spectrum measuring device measuring a wavelength of light output from the optical amplifier; and a refractive index adjustment circuit controlling a current applied to the equivalent resonator length adjustor based on a result of measurement performed by the wavelength spectrum measuring device to adjust a refractive index of the equivalent resonator length adjustor. Parasitic oscillation light in a plurality of Fabry-Perot modes is generated as the butt joint interface is one of reflection ends.

Abstract: A three-dimensional microchemical chip having flow-path-supporting substrate sheets flow-path-retaining substrate sheets which is stacked to the flow-path-supporting substrate sheets and join and integrate therewith by a direct covalent bond or an indirect covalent bond via molecular adhesive, flow paths defined by recessing and/or piercing the flow-path-supporting substrate sheets and sterically and sequentially, in which a fluid sample is subjected to a chemical reaction and/or chemical action, a receiving hole which is pierced in the flow-path-retaining substrate sheet and is connected to the flow paths; the flow paths are sequentially and sterically connected from fluid-sample-injecting holes to fluid-sample-draining holes.

Abstract: A simple and compact microchemical chip has a fine flow path formed therein through which a specimen is made to flow; is break resistance; makes it possible to flow the fluid sample to the flow path; makes it possible to analyze a useful substance and cause it to react; and can be produced with a high yield. A microchemical chip includes: a rubber sheet having a penetrated flow path which chemically reacts a pressurized fluid sample selected from a specimen and a reagent by flowing thereinto; substrate sheets which sandwich the rubber sheet and bond to both faces thereof by direct bond or by chemical bond through a silane-coupling agent and are selected from metal, ceramics, glass, and resin; and a hole for injecting the fluid sample into the flow path and a hole for draining the fluid sample flowed therefrom which are opened into the substrate sheet.

Abstract: An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers.

Abstract: An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers.

Abstract: An integrated optical modulator and laser device includes a laser section, a modulator section for modulating the intensity of a laser beam produced by the laser section, and a separation section located between the laser section and the modulator section. The laser section includes a first anode electrode and a first cathode electrode. The modulator section includes a second anode electrode and a second cathode electrode. A lower cladding layer is integral to the laser section, the modulator section, and the separation section and the width of the lower cladding layer is narrowest in the separation section.

Abstract: An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers.

Abstract: An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers.

Abstract: An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.

Abstract: An optical device includes: a substrate; an optical branching filter on the substrate and dividing input light into first and second input lights; first and second Mach-Zehnder optical modulators on the substrate and respectively modulating the first and second input lights; and an optical coupler on the substrate and combining light modulated by the first Mach-Zehnder optical modulator and light modulated by the second Mach-Zehnder optical modulator. Each of the first and second Mach-Zehnder optical modulator includes two optical waveguides, a phase modulation electrode applying a modulation voltage across the optical waveguides to change phases of light in the optical waveguides, and a feed line and a terminal line respectively connected to opposite ends of the phase modulation electrode to supply the modulation voltage to the phase modulation electrode. The feed lines and the terminal lines respectively extend to peripheral portions of the substrate.

Abstract: There are provided a high-permittivity dielectric raw material, an antenna device using the raw material and being useful as, especially, the built-in antenna device of a portable phone; a portable phone which can be reduced in weight, thickness and size, with an antenna radiation efficiency improved, and an electromagnetic wave shielding body for effectively shielding electromagnetic wave from an electric cooker. A dielectric raw material A having carbons dispersed in a silicone rubber base material 1, wherein, in any one of dielectric raw materials A, 1) containing 150 to 300 pts.wt. of carbons per 100 pts.wt.