Abstract: The apparatus, system and method for cutting crystal ingot provide techniques for cutting an ingot into wafers with a wire cutting apparatus utilizing wire with a diameter of less than 0.18 mm, such as 0.14 mm. The wire cutting apparatus also includes multiple rollers about which the wire is wrapped, and nozzles for applying slurry to the wire. One of the rollers is located on one side of the crystal ingot, while another roller is located on the other side of the crystal ingot. At least one nozzle is disposed proximate the first and second rollers. The nozzles collectively disperse slurry at a rate in the range of 40 to 60 liters per minute, such as 50 liters per minute, and at a viscosity of 42 to 62 centipose, such as 52 centipose.

Abstract: The apparatus, system and method for cutting crystal ingot provide techniques for cutting an ingot into wafers with a wire cutting apparatus utilizing wire with a diameter of less than 0.18 mm, such as 0.14 mm. The wire cutting apparatus also includes multiple rollers about which the wire is wrapped, and nozzles for applying slurry to the wire. One of the rollers is located on one side of the crystal ingot, while another roller is located on the other side of the crystal ingot. At least one nozzle is disposed proximate the first and second rollers. The nozzles collectively disperse slurry at a rate in the range of 40 to 60 liters per minute, such as 50 liters per minute, and at a viscosity of 42 to 62 centipose, such as 52 centipose.

Abstract: A method and apparatus disclosed by this invention allows determination of the interstitial oxygen concentration in a silicon single crystal to be effected stably and accurately without being appreciably affected by change of the temperature of a sample under test. The interstitial oxygen concentration in the silicon single crystal is determined on the basis of the value of:(Light absorption coefficient).times.[1+a.times.(peak half width)]or the value of:(Light absorption coefficient).times.[1+b.times.(peak area)/ (peak height)](wherein a or b stands for a parameter whose value depends on the conditions for determination or the apparatus for determination and should be empirically fixed with respect to specific conditions of determination or the apparatus used therefor) concerning an interstitial oxygen absorption peak at 1106 cm.sup.-1 obtained by means of an infrared spectrophotometer.