Abstract: An end point detection method in the case where a catalyst arranged in a treatment chamber of a gas phase reaction processing apparatus is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst heated at high temperature, comprises the steps of supplying the electric power to the catalyst from a constant current source, detecting electric potential difference between both ends of the catalyst, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

Abstract: The object of the present invention is to provide an end point detection method in a gas phase reaction processing apparatus. An end point detection method in the case where a catalyst 9 arranged in a treatment chamber is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst 9 heated at high temperature, comprises the steps of supplying the electric power to the catalyst 9 from a constant current source 10, detecting electric potential difference between both ends of the catalyst 9, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

Abstract: A gas phase reaction processing device 25 comprising a processing chamber 14 into which reactive gas is introduced, substrate material 3 to be processed which is disposed within the processing chamber 14, a catalytic body 9 for decomposing the reactive gas introduced into the processing chamber 14, an electric power unit 10 for supplying power to the catalytic body 9, and an electrode structure 15 containing the catalytic body 9, the gas phase reaction processing device being characterized in that the electrode structure 15 is provided with a plurality of catalytic bodies 9 which are arranged substantially parallel with one another, a first group of terminals 7 and a second group of terminals 8 which are disposed opposite to sandwich this catalytic body 9 therebetween, wherein the first group of terminals 7 supports one end of the catalytic body 9 and the second group of terminals 8 supports the other end of the catalytic body 9 respectively, and a terminal block 6 adapted to support and electrically insulate

Abstract: An electron cyclotron resonance plasma chemical vapor deposition system has a reaction chamber for introducing a reaction gas therein, the reaction chamber housing a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide for generating and introducing a microwave into the reaction chamber to produce a plasma in the reaction chamber for activating the reaction gas to etch or deposit a film on the semiconductor wafer in the reaction chamber. A pair of upper and lower coils is disposed around the reaction chamber for generating respective magnetic fields in opposite directions in the reaction chamber. The magnetic fields cancel out each other creating a region with substantially no flux density in the magnetic fields between the coils. A bias voltage is applied to the table to attract the plasma to the table in a uniform manner.