Patents by Inventor Kazuhisa TORIGOE
Kazuhisa TORIGOE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888036Abstract: A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.Type: GrantFiled: June 24, 2022Date of Patent: January 30, 2024Assignee: SUMCO CORPORATIONInventors: Kazuya Kodani, Toshiaki Ono, Kazuhisa Torigoe
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Publication number: 20230307505Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.Type: ApplicationFiled: June 5, 2023Publication date: September 28, 2023Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO, Shunya KAWAGUCHI
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Patent number: 11695048Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.Type: GrantFiled: April 8, 2021Date of Patent: July 4, 2023Assignee: SUMCO CORPORATIONInventors: Kazuhisa Torigoe, Toshiaki Ono, Shunya Kawaguchi
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Publication number: 20220319851Abstract: A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.Type: ApplicationFiled: June 24, 2022Publication date: October 6, 2022Applicant: SUMCO CORPORATIONInventors: Kazuya KODANI, Toshiaki ONO, Kazuhisa TORIGOE
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Publication number: 20210320177Abstract: A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.Type: ApplicationFiled: April 8, 2021Publication date: October 14, 2021Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO, Shunya KAWAGUCHI
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Patent number: 11121003Abstract: Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.Type: GrantFiled: June 12, 2018Date of Patent: September 14, 2021Assignee: SUMCO CorporationInventors: Kazuhisa Torigoe, Shigeru Umeno, Toshiaki Ono
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Patent number: 10861990Abstract: A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm3) and an initial oxygen concentration X (×1017 atoms/cm3) satisfy the expression X??4.3×10?19Y+16.3.Type: GrantFiled: September 26, 2019Date of Patent: December 8, 2020Assignee: SUMCO CORPORATIONInventors: Kazuhisa Torigoe, Toshiaki Ono
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Publication number: 20200105542Abstract: Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.Type: ApplicationFiled: June 12, 2018Publication date: April 2, 2020Applicant: SUMCO CorporationInventors: Kazuhisa Torigoe, Shigeru Umeno, Toshiaki Ono
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Publication number: 20200051817Abstract: A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film formation step for forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and a nitrogen-concentration setting step for setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film through the epitaxial-film formation step to a heat treatment in a nitrogen atmosphere.Type: ApplicationFiled: September 12, 2017Publication date: February 13, 2020Applicant: SUMCO CORPORATIONInventors: Kazuya KODANI, Toshiaki ONO, Kazuhisa TORIGOE
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Publication number: 20200020817Abstract: A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm3) and an initial oxygen concentration X (×1017 atoms/cm3) satisfy the expression X??4.3×10?19Y+16.3.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO
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Publication number: 20180204960Abstract: An epitaxial silicon wafer is provided with a boron-doped silicon substrate and an epitaxial layer formed on a surface of the silicon substrate, wherein the boron concentration in the silicon substrate is 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less, and an initial oxygen concentration in the silicon substrate is 11×1017 atoms/cm3 or less. When an oxygen precipitate evaluation heat treatment, such as a heat treatment at 700° C. for 3 hours and a heat treatment at 1,000° C. for 16 hours is executed on the epitaxial silicon wafer, the density of oxygen precipitate in the silicon substrate is 1×1010/cm3 or less.Type: ApplicationFiled: July 6, 2016Publication date: July 19, 2018Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO
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Patent number: 9818609Abstract: A manufacturing method of an epitaxial silicon wafer including a silicon wafer doped with boron and having a resistivity of 100 m?·cm or less and an epitaxial film formed on the silicon wafer includes: growing the epitaxial film on the silicon wafer; and applying a heat treatment on the epitaxial silicon wafer at a temperature of less than 900 degrees C.Type: GrantFiled: December 19, 2014Date of Patent: November 14, 2017Assignee: SUMCO CORPORATIONInventors: Kazuhisa Torigoe, Toshiaki Ono
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Publication number: 20170011918Abstract: A manufacturing method of an epitaxial silicon wafer including a silicon wafer doped with boron and having a resistivity of 100 m?•cm or less and an epitaxial film formed on the silicon wafer includes: growing the epitaxial film on the silicon wafer; and applying a heat treatment on the epitaxial silicon wafer at a temperature of less than 900 degrees C.Type: ApplicationFiled: December 19, 2014Publication date: January 12, 2017Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO
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Patent number: 9281216Abstract: A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film-growth step in which an epitaxial film is grown on a silicon wafer in a reaction container, and a temperature reduction step in which a temperature of the epitaxial silicon wafer is reduced from a temperature at which the epitaxial film is grown. In the temperature reduction step, a temperature reduction rate of the epitaxial silicon wafer is controlled to satisfy a relationship represented by R?2.0×10-4X?2.9, where X (?·cm) represents a resistivity of the silicon wafer, and R (degrees C./min) represents the temperature reduction rate for lowing the temperature of the epitaxial silicon wafer from 500 degrees C. to 400 degrees C.Type: GrantFiled: June 30, 2015Date of Patent: March 8, 2016Assignee: SUMCO CORPORATIONInventors: Kazuhisa Torigoe, Toshiaki Ono
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Publication number: 20160035583Abstract: A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film-growth step in which an epitaxial film is grown on a silicon wafer in a reaction container, and a temperature reduction step in which a temperature of the epitaxial silicon wafer is reduced from a temperature at which the epitaxial film is grown. In the temperature reduction step, a temperature reduction rate of the epitaxial silicon wafer is controlled to satisfy a relationship represented by R?2.0×10-4X?2.9, where X (?·cm) represents a resistivity of the silicon wafer, and R (degrees C./min) represents the temperature reduction rate for lowing the temperature of the epitaxial silicon wafer from 500 degrees C. to 400 degrees C.Type: ApplicationFiled: June 30, 2015Publication date: February 4, 2016Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO