Abstract: An electromagnetic wave shielding material 1 comprises a light-shielding electrical conductor layer 11 having, on its observer-side external surface, a blackening layer 12. The electrical conductor layer 11 comprises a mesh portion 2 that has a large number of openings adjoining one another and faces the center portion 5b of the image-luminescent part 5a of a display device 5, and a frame portion 3 that surrounds the mesh portion 2 and faces the outer edge portion 5c of the image-luminescent part 5a of the display device 5. When trimming the screen of a display D with a black-colored light-shielding layer, since the electromagnetic wave shielding material 1 is used, it is not necessary to perform9 an additional printing step or the like, so that the total number of steps and material cost are not increased. Moreover, such electromagnetic wave shielding material does not cause non-uniformity in light-shielding properties compared with a light-shielding layer formed by printing.

Abstract: An electromagnetic wave shielding layer 1 comprises a transparent substrate 11, an adhesive layer 13 which is provided as needed, an electromagnetic wave shielding layer 15, and a transparent resin layer 17. The electromagnetic shielding layer 15 includes a mesh portion 103 facing a screen portion 100 of an image displaying device, a transparent resin layer anchoring portion 105 surrounding a periphery of the mesh portion 103 and including openings 105a having an opening ratio lower than that of openings 103a of the mesh portion 103, and a frame portion 107 surrounding an outer periphery of the transparent resin layer anchoring portion 105 and not having openings. The transparent resin layer 17 is provided such that it covers the surfaces of the mesh portion 103 and the transparent resin layer anchoring portion 105 and fills the openings 103a, 105a.

Abstract: An electromagnetic wave shielding device 1 comprises a transparent substrate 11, an adhesive layer 13 which is provided as needed, an electromagnetic wave shielding layer 15, and a transparent resin layer 17. The electromagnetic wave shielding layer 15 includes a mesh portion 103 facing a screen portion 100 of an image displaying device, a transparent resin layer anchoring portion 105 surrounding a periphery of the mesh portion 103, and including openings 105a having the same opening ratio as that of the openings 103a of the mesh portion 103, and a frame portion 107 surrounding an outer periphery of the transparent resin layer anchoring portion 105, and not having openings. The transparent resin layer 17 is provided such that it covers the surfaces of the mesh portion 103, and the transparent resin layer anchoring portion 105, and fills the openings 103a, 105a.

Abstract: An electromagnetic wave shielding material 1 comprises a light-shielding electrical conductor layer 11 having, on its observer-side external surface, a blackening layer 12. The electrical conductor layer 11 comprises a mesh portion 2 that has a large number of openings adjoining one another and faces the center portion 5b of the image-luminescent part 5a of a display device 5, and a frame portion 3 that surrounds the mesh portion 2 and faces the outer edge portion 5c of the image-luminescent part 5a of the display device 5. When trimming the screen of a display D with a black-colored light-shielding layer, since the electromagnetic wave shielding material 1 is used, it is not necessary to perform9 an additional printing step or the like, so that the total number of steps and material cost are not increased. Moreover, such electromagnetic wave shielding material does not cause non-uniformity in light-shielding properties compared with a light-shielding layer formed by printing.

Abstract: The present invention provides a semiconductor circuit capable of effectively applying a filter function to both of L-level noise superimposed during originally H signal periods and H-level noise superimposed during originally L signal periods. An input signal branches off into two and one of them is inputted through signal inverting means to a first delay circuit including a first capacitor. The other is inputted to a second delay circuit including a second capacitor. An output signal from the first delay circuit and an output signal from the second delay circuit are inputted to separate input terminals of a flip-flop.

Abstract: The present invention has a main object to provide a transparent conductive heat sealing material of which antistatic property does not deteriorates even at a low humidity, and has a transparency to an extent of permitting visual recognition of the contents and a carrier tape lid using the same. To achieve this object, the transparent conductive heat sealing material of the invention is characterized by a heat-sealable synthetic resin, and conductive fine particle having a 50% particle size of up to 1.0 ?m.

Abstract: The present invention provides a semiconductor circuit capable of effectively applying a filter function to both of L-level noise superimposed during originally H signal periods and H-level noise superimposed during originally L signal periods. An input signal branches off into two and one of them is inputted through signal inverting means to a first delay circuit including a first capacitor. The other is inputted to a second delay circuit including a second capacitor. An output signal from the first delay circuit and an output signal from the second delay circuit are inputted to separate input terminals of a flip-flop.

Abstract: The present invention has a main object to provide a transparent conductive heat sealing material of which antistatic property does not deteriorates even at a low humidity, and has a transparency to an extent of permitting visual recognition of the contents and a carrier tape lid using the same. To achieve this object, the transparent conductive heat sealing material of the invention is characterized by a heat-sealable synthetic resin, and conductive fine particle having a 50% particle size of up to 1.0 &mgr;m.

Abstract: The present invention has a main object to provide a transparent conductive heat sealing material of which antistatic property does not deteriorates even at a low humidity, and has a transparency to an extent of permitting visual recognition of the contents and a carrier tape lid using the same. To achieve this object, the transparent conductive heat sealing material of the invention is characterized by a heat-sealable synthetic resin, and conductive fine particle having a 50% particle size of up to 1.0 &mgr;m.

Abstract: The present invention has a main object to provide a transparent conductive heat sealing material of which antistatic property does not deteriorates even at a low humidity, and has a transparency to an extent of permitting visual recognition of the contents and a carrier tape lid using the same. To achieve this object, the transparent conductive heat sealing material of the invention is characterized by a heat-sealable synthetic resin, and conductive fine particle having a 50% particle size of up to 1.0 &mgr;m.

Abstract: Provided are an abrasive tape suitable for finishing of surfaces or the like of precision components such as optical connector ferrules and semiconductor wafers, and a process for producing it. A coating agent in which abrasive particles having an average particle size in the range of 1 to 200 m&mgr; are dispersed in a binder resin solution. The coating agent is applied, with intervention of a primer layer if necessary, onto a base for abrasive tape to form an abrasive layer, thus obtaining an abrasive tape.

Abstract: Provided are an abrasive tape suitable for finishing of surfaces or the like of precision components such as optical connector ferrules and semiconductor wafers, and a process for producing it. A coating agent in which abrasive particles having an average particle size in the range of 1 to 200 m&mgr; are dispersed in a binder resin solution. The coating agent is applied, with intervention of a primer layer if necessary, onto a base for abrasive tape to form an abrasive layer, thus obtaining an abrasive tape.

Abstract: Provided are an abrasive tape suitable for finishing of surfaces or the like of precision components such as optical connector ferrules and semiconductor wafers, and a process for producing it. A coating agent in which abrasive particles having an average particle size in the range of 1 to 200 m&mgr; are dispersed in a binder resin solution. The coating agent is applied, with intervention of a primer layer if necessary, onto a base for abrasive tape to form an abrasive layer, thus obtaining an abrasive tape.

Abstract: A plastic optical fiber continuous optical amplifier for continuously amplifying signal lights includes an exciting light tube with a double tube structure formed of an inner tube and an outer tube, and a plastic optical fiber (POF) coaxially provided inside the inner tube of the exciting light tube. The POF includes a core having an induced emission material therein and a larger refractive index, and a clad for holding the core and having a smaller refractive index than that of the core. The core and the clad are coaxially provided to the POF. It is preferable that electrodes of the exciting light tube have a ring shape to effectively excite.

Abstract: Provided are an abrasive tape suitable for finishing of surfaces or the like of precision components such as optical connector ferrules and semiconductor wafers, and a process for producing it. A coating agent in which abrasive particles having an average particle size in the range of 1 to 200 m.mu. are dispersed in a binder resin solution. The coating agent is applied, with intervention of a primer layer if necessary, onto a base for abrasive tape to form an abrasive layer, thus obtaining an abrasive tape.

Abstract: A frequency multiplier circuit needs to have a voltage controlled oscillator circuit having a wide oscillation frequency range, or delay cells each having a delay value which can be controlled over a wide range. Depending on the frequency multiplication factor, however, a frequency multiplied clock signal susceptible to influence of noise is generated. In the disclosed frequency multiplier circuit, there are provided a phase comparison input selection circuit for conducting a selection out of output signals of delay cells forming a voltage controlled delay circuit according to a frequency multiplication factor setting signal and an input frequency range setting signal and outputting the selected signal to a phase comparator, and a selected waveform generation circuit for generating a frequency multiplied clock signal CKOUT from the output signals of the delay cells according to the frequency multiplication factor setting signal and the input frequency range setting signal.

Abstract: A digital-to-analog converter includes a D/A converter circuit section, connection switching control circuit and multi-input operational amplifier circuit. The D/A converter circuit section is supplied with a binary code of upper i bits of an n-bit (1.ltoreq.i<n) digital input, outputting a first voltage obtained by subjecting the i-bit binary code to the D/A conversion, and outputting a second voltage which is higher than the first voltage by an amount corresponding to the weight of the least significant bit of the i-bit input. The connection switching control circuit is supplied with the first and second voltages output from the D/A converter circuit section and a binary code of the remaining lower j (1.ltoreq.j<n, j=n-i) bits of the above binary code. The connection switching control circuit decodes the j-bit binary code, selectively outputs the second voltage from the D/A converter circuit section to part of 2.sup.

Abstract: An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plurality (at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer having a narrower band gap is made narrower than that of a less deeper quantum well layer having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure.

Abstract: Novel electron wave combining and/or branching devices and Aharonov-Bohm type quantum interference devices are proposed, which have no curved electron waveguide structures to form an electron branching or decoupling part or ring geometry. But instead the electron branching part or ring geometry is effectively constructed in a straight double quantum well structures, by the control of the shapes of the wave functions or of the subband energy levels relative to the Fermi level by electric fields.

Abstract: Disclosed is a photodetector adapted to detect light having a predetermined level of photon energy, comprising: a first semiconductor layer, a second semiconductor layer having a quantum well or a quantum wire structure, a barrier layer provided between the first and second semiconductor layers, a device for applying voltage to the barrier layer and the first and second semiconductor layers in order to generate a tunnel current flowing through the barrier layer, and a device for detecting the tunnel current. The second semiconductor layer exhibits a plurality of quantized electron energy levels, the energy difference between which is slightly smaller or slightly larger than the photon energy of the detected light. Further, incidence of the detected light upon the second semiconductor layer causes the quantized electron energy levels to shift by the photo Stark effect, resulting in variation of the tunnel current.